TRANSISTOR D 331 Search Results

TRANSISTOR D 331 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 331 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
to92 transistor pinout Abstract: MAX-7Q BST72A Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed	OCR Scan	BST72A to92 transistor pinout MAX-7Q BST72A	PDF
2U37 Abstract: BU2520af BY228 TRANSISTOR BO 345 Text: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3331 DDEöBbR 514 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in	OCR Scan	BU2520AF OT199; 2U37 BU2520af BY228 TRANSISTOR BO 345	PDF
HF 331 transistor Abstract: No abstract text available Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	BLY92A HF 331 transistor	PDF
2N6660 Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor Text: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.	OCR Scan	2N6659 2N6660 2N6661 N6660 2N6661 bbS3T31 D03b22S 2N6660 2N6659 TP 1322 2N6661 transistor	PDF
RX1011B250Y Abstract: No abstract text available Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.	OCR Scan	DD1S17S RX1011B250Y VCB-50 VCE-20 0Q1S17Ã T-33-15 RX1011B250Y	PDF
Untitled Abstract: No abstract text available Text: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.	OCR Scan	2N6659 2N6660 2N6661	PDF
BUK457-450B Abstract: T0220AB Text: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	biaS3T31 00205S0 BUK457-450B ID/100 T0220AB	PDF
RX1214B300Y Abstract: No abstract text available Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.	OCR Scan	RX1214B300Y D01S113 RX1214B3 RX1214B300Y	PDF
transistor smd zG Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with	OCR Scan	BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
GHz PNP transistor Abstract: BFQ253 mb8833 Philips MBB BFQ233 BFQ233A BFQ253A Text: Philips Semiconductors — 33 PNP 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N Product specification - / ^ ' BFQ253; BFQ253A 5bE 7110flEb D[]i45b2S Ö3M IPHIN P IN N IN G P N P silicon epitaxial transistor in a S O T 5 T O -3 9 envelope with	OCR Scan	BFQ253; BFQ253A 7110fl2b BFQ233 BFQ233A T-33-17 711gfleb GHz PNP transistor BFQ253 mb8833 Philips MBB BFQ253A	PDF
Transistor D 799 Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G \| MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: N AUER PHI LIP S/DISCRETE 2SE D btaS3T31 00E05S0 3 BUK457-450B PowerMOS transistor G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	btaS3T31 00E05S0 BUK457-450B bbS3T31	PDF
transistor sc 238 Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238 Text: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers	OCR Scan	BD234 BD236 BD238 transistor sc 238 T-33-H transistor motorola 236 transistor sc 236 B023S BD238	PDF

y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
BUK454-800A Abstract: BUK454-800B T0220AB Text: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 D030b35 BUK454-800A/B T0220AB BUK454 LIMIBUK454-800A/B BUK454-800A BUK454-800B	PDF
T2721 Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1 Text: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter	OCR Scan	BFX29 T2721 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1	PDF
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1	PDF
TRANSISTOR GB 558 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
transistor 2TH Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)	OCR Scan	BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH	PDF
BFX29 Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2 Text: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base	OCR Scan	0G2772Ã BFX29 BFX29 DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2	PDF
Untitled Abstract: No abstract text available Text: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in	OCR Scan	TLP631 TLP632 E67349 TLP631	PDF
100-P Abstract: BUK454-800A BUK454-800B T0220AB Text: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711DflSt. 00b4D71 BUK454-800A/B T0220AB BUK454 -800A -800B 100-P BUK454-800A BUK454-800B	PDF
Untitled Abstract: No abstract text available Text: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.	OCR Scan	RZ2731B45W 001SH3S 7Z24137	PDF

TRANSISTOR D 331 Search Results

TRANSISTOR D 331 Result Highlights (5)

TRANSISTOR D 331 Datasheets Context Search

to92 transistor pinout

2U37

HF 331 transistor

2N6660

RX1011B250Y

Untitled

BUK457-450B

RX1214B300Y

transistor smd zG

tip122 tip127 audio amp schematic

GHz PNP transistor

Transistor D 799

Untitled

transistor sc 238

y51 h 120c

BUK454-800A

T2721

2SC5012-T1

TRANSISTOR GB 558

transistor 2TH

BFX29

Untitled

100-P

Untitled