TRANSISTOR D 331 DATA Search Results

TRANSISTOR D 331 DATA Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC226R0G3D	Murata Manufacturing Co Ltd	Data Line Filter,
NFM15PC755R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC435R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC915R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723

TRANSISTOR D 331 DATA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2U37 Abstract: BU2520af BY228 TRANSISTOR BO 345 Text: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3331 DDEöBbR 514 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in	OCR Scan	BU2520AF OT199; 2U37 BU2520af BY228 TRANSISTOR BO 345	PDF
transistor 21Y Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553 Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements	OCR Scan	/331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553	PDF
mosfet J 3305 Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,	OCR Scan	MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET	PDF
BUK657 Abstract: BUK657-400A BUK657-400B T0220AB IRF FET Text: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	BUK657-400A BUK657-400B T-37-/3 BUK657 -40QA -400B BUK657-400B T0220AB IRF FET	PDF
philips bfq Abstract: BFQ263 BFQ263A RK 100 Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with	OCR Scan	BFQ263; BFQ263A 711062b 0045biÂ 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100	PDF
BSP108 Abstract: transistor marking ST4 Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended	OCR Scan	BSP108 OT223 BSP108 transistor marking ST4	PDF
transistor 331 p Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPM401 The RF Line UHF Power Transistor . . . desig ned a s an N P N gold m etallized tran sisto r using d iffused em itter b allast resisto rs for op eration in C la s s A , B or C co n dition s. Th e high g ain red uces the need for co m p lex broadband circ u its and is id ea lly suited	OCR Scan	TPM401 transistor 331 p	PDF
phototransistor 650 nm Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor	PDF
8060 transistor Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45 Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,	Original	8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45	PDF
transistor h 331 Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm	PDF
C 331 Transistor Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331 Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.	OCR Scan	O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331	PDF
transistor d-331 Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 transistor d-331	PDF
phototransistor 650 nm Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 phototransistor 650 nm	PDF
Untitled Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original		PDF

phototransistor 650 nm Abstract: phototransistor peak 550 nm Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm	PDF
transistor d 331 Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331 Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten	Original	331-JK Q62702-P1634 transistor d 331 D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331	PDF
E7F-L Abstract: BSS192 transistor c90 MARKING zss TRANSISTOR Scans-0047197 Text: b7E » bbSS'ìBI □ 0 2 3 cìScì Ô47 IAPX Philips Semiconductors Data sheet status Product specification date of issue July 1993 BSS192 P-channel enhancement mode vertical D-MOS transistor N AMER PHILIPS/DISCRETE FEATURES Direct interface to C-MOS, TTL,	OCR Scan	BSS192 A/-10 bbS3T31 0023T34 RSS192 MCB73S E7F-L BSS192 transistor c90 MARKING zss TRANSISTOR Scans-0047197	PDF
IRF331 Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid	OCR Scan	IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333	PDF
Untitled Abstract: No abstract text available Text: • b 1353131 00E453Q 8H2 « A P X N. AMER PHILIPS/DISCRETE BCP69 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0	OCR Scan	00E453Q BCP69 Q0B4534	PDF
microwave transistor 03 Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor Text: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS	OCR Scan	PPC5001T OT447A microwave transistor 03 sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor	PDF
BF970A Abstract: No abstract text available Text: DEVELOPM ENT DATA • LtS3T3 lToQ 15 33 b This data sheet contains advance Information and =^— =— = -specifications are subject to change without notice._ N AMER PHILIPS/DISCRETE if _ 5 ■ n ~ BF970A □ bE D _	OCR Scan	BF970A BF970A	PDF
BF970A Abstract: transistor d 331 data MARKING FY 42RL SOT-37 sot 37 Text: _ D EV ELO PM EN T DATA This data sheet contains advance Information and specifications are subject to change without notice. Il • ^53^31 0G1533L S — r ■ BF970A i . -. 1 1 .- - N AMER PHILIPS/DISCRETE	OCR Scan	001533b BF970A OT-37. BF970A transistor d 331 data MARKING FY 42RL SOT-37 sot 37	PDF
NEC Ga FET marking L Abstract: U/25/20/TN26/15/850/NE32984D Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm	OCR Scan	NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D	PDF
2N2222A 331 Abstract: No abstract text available Text: I lll iF t i mi 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN	OCR Scan	2N2222ACSM4 2N2222A 150mA 00D15Ã 2N2222A 331	PDF

TRANSISTOR D 331 DATA Search Results

TRANSISTOR D 331 DATA Result Highlights (5)

TRANSISTOR D 331 DATA Datasheets Context Search

2U37

transistor 21Y

mosfet J 3305

BUK657

philips bfq

BSP108

transistor 331 p

phototransistor 650 nm

8060 transistor

transistor h 331

C 331 Transistor

transistor d-331

phototransistor 650 nm

Untitled

phototransistor 650 nm

transistor d 331

E7F-L

IRF331

Untitled

microwave transistor 03

BF970A

BF970A

NEC Ga FET marking L

2N2222A 331