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    TRANSISTOR D 471 Search Results

    TRANSISTOR D 471 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 471 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D087 BSP122 613510/03/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D087 BSP89 613510/03/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D109 BSS87 MAM355 613510/03/pp8 PDF

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


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    2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P PDF

    TRANSISTOR D 471

    Abstract: BP317 BSS87 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D109 BSS87 MAM355 613510/03/pp8 TRANSISTOR D 471 BP317 BSS87 MBB692 PDF

    TRANSISTOR D 471

    Abstract: BP317 BSP89 MBB691 MBB692 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D087 BSP89 613510/03/pp8 TRANSISTOR D 471 BP317 BSP89 MBB691 MBB692 SC-73 PDF

    TRANSISTOR D 471

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D087 BSP122 613510/03/pp8 TRANSISTOR D 471 PDF

    MAM355

    Abstract: msa63
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D109 BSS87 MAM355 BSS87 613510/03/pp8 771-BSS87-T/R MAM355 msa63 PDF

    04547

    Abstract: 5401 DM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D087 BSP89 OT223 OT223 MAM109 BSP89 613510/03/pp8 771-BSP89-T/R 04547 5401 DM PDF

    TRANSISTOR D 471

    Abstract: bs108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D186 BS108 MAM150 613510/03/pp8 TRANSISTOR D 471 bs108 PDF

    m8 smd transistor

    Abstract: "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    M3D102 BSN20W OT323 603502/02/pp8 m8 smd transistor "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use


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    BSP130 OT223 PDF

    BUK551-100A

    Abstract: BUK551-100
    Text: P ro d u ct S pe cifica tion P hilip s S em ico n d u cto rs PowerMOS transistor BUK551-100A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    BUK551-100A/B BUK551 -100A -100B BUK551-100A/B BUK551-100A BUK551-100 PDF

    BUK551-100A

    Abstract: BUK551-100B T0220AB
    Text: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.


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    BUK551-100A/B T0220AB BUK551 -100A -100B BUK551-100A BUK551-100B PDF

    ULN2003A 15 pin details application

    Abstract: pin details of ULN2003A ULN2003AN ULN2003AD ULN2003ANSR ULN2003AJ ULN2003ADRE4 ULN 283
    Text: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A HIGHĆVOLTAGE HIGHĆCURRENT The ULN2001A is obsolete DARLINGTON TRANSISTOR ARRAY and is no longer supplied. SLRS027G − DECEMBER 1976 − REVISED JUNE 2004 D 500-mA-Rated Collector Current D D D D


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    ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A ULN2001A SLRS027G 500-mA-Rated ULN2001A ULN2003A 15 pin details application pin details of ULN2003A ULN2003AN ULN2003AD ULN2003ANSR ULN2003AJ ULN2003ADRE4 ULN 283 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


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    2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    O220AB BUK551-100A/B BUK551 bb53T31 BUK551 -100A/E5 Q3D77c PDF

    BLV36

    Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
    Text: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or


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    711002t. BLV36 BLV36 TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36 PDF

    PHD24N03LT

    Abstract: No abstract text available
    Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .


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    PHD24N03LT PHD24N03LT OT428 OT428, PDF

    Untitled

    Abstract: No abstract text available
    Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .


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    PHD24N03LT PHD24N03LT OT428 OT428, PDF

    Untitled

    Abstract: No abstract text available
    Text: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .


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    PHD20N06T M3D300 PHD20N06T OT428 MBK091 PDF

    PHD83N03LT

    Abstract: PHD83
    Text: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .


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    PHD83N03LT M3D300 PHD83N03LT OT428 OT428, MBB076 MBK091 PHD83 PDF