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    TRANSISTOR D 716 VOLTAGE Search Results

    TRANSISTOR D 716 VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 716 VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Click on Series name for product info on aimtec.com Series AMLDP-Z Up to 1000mA | LED Driver FEATURES: • • • • Models Single output Model Input Voltage V AMLDP-1630Z AMLDP-1635Z AMLDP-1650Z AMLDP-1660Z AMLDP-1670Z AMLDP-16100Z 7-16 7-16 7-16 7-16


    Original     		PDF 1000mA AMLDP-1630Z AMLDP-1635Z AMLDP-1650Z AMLDP-1660Z AMLDP-1670Z AMLDP-16100Z

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance


    Original     		PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.


    Original     		PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.


    Original     		PDF BLF8G09LS-270W; BLF8G09LS-270GW BLF8G09LS-270W 8G09LS-270GW

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0


    Original     		PDF MMPQ3467

    Untitled

    Abstract: No abstract text available
    Text: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.


    Original     		PDF AOC2800 AOC2800 716EF

    Untitled

    Abstract: No abstract text available
    Text: AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2802 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.


    Original     		PDF AOC2802 AOC2802 716EF

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.


    Original     		PDF BLF8G09LS-270W; BLF8G09LS-270GW BLF8G09LS-270W 8G09LS-270GW

    MAX749CPA

    Abstract: No abstract text available
    Text: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digit a lly Adjust a ble LCD Bia s Supply _Applic a t ions Notebook Computers _Fe a t ure s ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:


    Original     		PDF MAX749CPA MAX749CSA 1-0043A 101mm 004in. 1-0041A MAX749CPA

    ztx750 equivalent

    Abstract: DAC IC 0808 749 MOSFET TRANSISTOR motorola SMD10P05L DAC ic 0808 pin diagram MAX749CPA dac IC 0808 circuit diagram MAX749 MAX749CSA MAX749EPA
    Text: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digitally Adjustable LCD Bias Supply _Applications Notebook Computers _Features ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:


    Original     		PDF MAX749CPA MAX749CSA MAX749C/D 1-0043A 101mm 004in. 1-0041A ztx750 equivalent DAC IC 0808 749 MOSFET TRANSISTOR motorola SMD10P05L DAC ic 0808 pin diagram MAX749CPA dac IC 0808 circuit diagram MAX749 MAX749CSA MAX749EPA

    MAX715CWG

    Abstract: MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 MAX716EVKIT TO-213
    Text: 19-4507; Rev. 1 ;3 /9 2 / l/ l/ J X I/ l/ l B attery-P ow ered Supply System s G e n e ra l D e s c rip tio n F e a tu re s ♦ Four Logic-Controlled +5V Regulators The MAX716 com bines circuitry for four low-dropout linear


    OCR Scan     		PDF MAX714/715/716 MAX716 InpuMAX716C/D MAX716EPI MAX716EWI MAX716MJI MAX716EVKIT MAX715CWG MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 TO-213

    2N2222A zetex

    Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
    Text: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down


    OCR Scan     		PDF MAX714/715/716 MAX716 inpu40Â MAX716MJI MAX716EVKIT 2N2222A zetex MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


    OCR Scan     		PDF MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    2TX749

    Abstract: 2N2222A zetex MAX715CWG E4QN 10P05L
    Text: 19-4507; Rev. 1;3/92 v V M X I / l / l B attery-P ow ered Supply System s The MAX716 com bines circuitry for four low-dropout linear regulators, three DC-DC switching regulators, and powersupervisory functions on a single IC. All but one regulator output is logic controlled so that loads may be shut down


    OCR Scan     		PDF AX714/715/716 MAX716 MAX716EVKIT 2TX749 2N2222A zetex MAX715CWG E4QN 10P05L

    transistor RJH 30

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750


    OCR Scan     		PDF QM75TX-HB E80276 E80271 11-M4 transistor RJH 30

    1N06CLE

    Abstract: zener diode 9CA transistor D 716
    Text: a RLP1N06CLE h a r r is January 1994 Voltage-Clamping Current-Limited ESD-Protected N~Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 1A, 55V r DS O N . . 0.75Ì1 • 'L im it.


    OCR Scan     		PDF RLP1N06CLE 150OC RLP1N06CLE 1N06CLE zener diode 9CA transistor D 716

    749 MOSFET TRANSISTOR motorola

    Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


    OCR Scan     		PDF MAX749 -100V 500kHz) 1178mm) 749 MOSFET TRANSISTOR motorola 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA

    749 MOSFET TRANSISTOR motorola

    Abstract: MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


    OCR Scan     		PDF MAX749 -100V 500kHz) 1178m 2032m 749 MOSFET TRANSISTOR motorola MAX749CPA

    transistor D 716

    Abstract: S10007
    Text: D iffused Junction S ilicon Type FEATURES • • • • V O LT A G E C U R R EN T C H A R A C T E R IS T IC S Universal standard, replacos many different part numbers. Diffused junction type In molded epoxy resin. N onpolarized. High reliability for com m unication use.


    OCR Scan     		PDF H--11-- transistor D 716 S10007

    HA20

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage


    OCR Scan     		PDF O-218 C67078-A3207-A2 HA20

    BSS52

    Abstract: BSS51 BSS50
    Text: Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51 ; BSS52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2 base 3 collector, connected to case DESCRIPTION


    OCR Scan     		PDF BSS61 BSS62. BSS50; BSS51 BSS52 BSS50 BSS51 BSS52

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    stetron

    Abstract: No abstract text available
    Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode


    OCR Scan     		PDF VT60D\SICVAR SDL-080-131 SDL-098-231 100mA: stetron