TRANSISTOR D 819 Search Results

TRANSISTOR D 819 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 819 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUX45 Abstract: transistor et 460 Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection	OCR Scan	CB-19 BUX45 transistor et 460	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSD42WT1 NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier	OCR Scan	MSD42WT1/D MSD42WT1 SC-70/SOT-323 7-inch/3000 OUCHTONE1-602-244-6609 b3b7255	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear	OCR Scan	DD3T433 BLW83	PDF
BLX13 Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971 Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested	OCR Scan	711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971	PDF
DTA143TA Abstract: No abstract text available Text: DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV h 7 > y ^ $ /T ra n s is to rs D TA 143TU /D TA 143TK /D TA 143TS D TA 143TF/D TA 143TL/D TA 143TA DTA 143TV \|s -7 > y ^ < y -?-/Transistor Switch Digital Transistors Includes Resistors F ~7	OCR Scan	DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV 143TU 143TK 143TS 143TF/D 143TL/D 143TA 143TV DTA143T DTA143TA	PDF
od300 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)	OCR Scan	2SC5289 SC-61 2SC5289-T1 od300	PDF
transistor ESM 16 Abstract: deflexion transistor ESM 30 ESM191 1S1500 Text: E S M 191.500 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTOR NPN S ILIC IU M , MESA DIFFUSE The ESM 191-500 is a fast switching high voltage transistor. It is primarly intended for use in horizon tal deflexion output stage o f black and	OCR Scan		PDF
TRANSISTOR D 819 Abstract: No abstract text available Text: UMC2N/FMC2A b y > v * * /Transistors UMC2N FMC2A 7 a 7 ^ 5 u i — J l K f'" 7 > v ?^ £ /D u a l Mini-Mold Transistor I t + PNP/NPN ' > ' ; □ > h 7 > ' > ^ ^ Epitaxial Planar PNP/NPN Silicon Transistor • • # * ^füll/D im en sio n s U nit: mm 1) X - n - i - t - A K / i ' ^ - y T '	OCR Scan		PDF
30011 Abstract: 2PA733 2PC945 2PA733 noise figure Text: N AUER PHILIP S/DISCRETE bTE D • bbSa^Bl OOEñlñl SET 2PA733 IAPX SILICON SMALL-SIGNAL TRANSISTOR PNP small-signal transistor, in a plastic TO-92 envelope. It is intended fo r use in audio am plifier driver stages and low speed switching applications etc.	OCR Scan	bbS3T31 2PA733 2PC945. 30011 2PA733 2PC945 2PA733 noise figure	PDF
transistor Siemens 14 S S 92 Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor Text: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e	OCR Scan	23SlaOS BRY561' Q68000-A803 Q68000-A803-S1 068000-A803-S2 Q68000-A803-S3 DQ04777 BRY56 transistor Siemens 14 S S 92 CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor	PDF
2PC945 Abstract: 2PA733 TRANSISTOR D 819 Text: 2PA733 PHILIPS INTERNATIONAL 5bE D 71Ii0äSb OOMEb^b 312 • PHIN SILICON SMALL-SIGNAL TRANSISTOR PNP small-signal transistor, in a plastic TO-92 envelope. It is intended for use in audio amplifier driver stages and low speed switching applications etc. NPN complementary type is the 2PC945.	OCR Scan	2PA733 71Ii0Ã 2PC945. 2PC945 2PA733 TRANSISTOR D 819	PDF

30V-8A Abstract: CET453N 8a 817 voltage 67A SOT 23 6 Text: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)	Original	CET453N OT-223 OT-223 30V-8A CET453N 8a 817 voltage 67A SOT 23 6	PDF
D 823 transistor Abstract: transistor PH ON 823 m Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage	OCR Scan	OT223 BFG31. BFG97 D 823 transistor transistor PH ON 823 m	PDF
Untitled Abstract: No abstract text available Text: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag	OCR Scan	TSB125100 18x53 20x48	PDF
MJ100BE55 Abstract: MJ100BE Text: 6367254 MOTOROLA SC MOTOROLA CXSTRS/R F »E\|b3t,7ESM ooam^T d 96D 8 1 4 9 9 d T-33-3S- vsruer uns ucua diitiet by MJ100BE55/D \| SEMICONDUCTOR TECHNICAL DATA MJ100BE55 IMPINI Silicon Power Transistor Module Energy M anagement S eries These Darlington transistors are designed for industrial service under practical operat	OCR Scan	T-33-3S- MJ100BE55/D MJ100BE55 MK145BP, MJ100BE55 MJ100BE	PDF
5609 Abstract: 5609 transistor TSA63065 Text: 4SE D • b l lS T S D DDDDSS3 MDO « P T C NICROSEMI CORP/POliIER TSA63065 Power Transistor Chip, NPN 30 A, 650 V, tf = 0.1 ps ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils	OCR Scan	TSA63065 5609 5609 transistor TSA63065	PDF
sf 819 transistor Abstract: 27e transistor transistor BDY29 Text: Power Transistors File Number HARRIS 819 SEMICOND SECTOR 2 ?E D m BDY29 □ 0 2 0 1 7 ci 5 H H A S 4302271 High-Power High-Current Transistor Silicon N -P -N Devices for Applications in Industrial and C o m m ercial Equipm ent TERMINAL DESIGNATIONS Features:	OCR Scan	BDY29 02017c CS-27S16 2C4-I949I sf 819 transistor 27e transistor transistor BDY29	PDF
transistor BDY29 Abstract: RCA-BDY29 BDY29 17560 High-Power NPN Silicon Power Transistor TRANSISTOR D 819 High-Power NPN Silicon Power Transistor 30A 6 PIN TRANSISTORS 566 Text: G E SOLI D 3875081 T i STATE G E SOLID STATE DE \| 3 f l ? S 0 f l l 01E 0Q17Sb0 17560 _Hro biectron Kower Transistors File Num ber 819 BDY29 High-Power High-Current Transistor Silicon N -P -N Devices for Applications in Industrial and C om m ercial Equipm ent	OCR Scan	QD17ShQ BDY29 CS-27516 O-204AA RCA-BDY29 BDY29 J3fl750Ã 175b3 transistor BDY29 17560 High-Power NPN Silicon Power Transistor TRANSISTOR D 819 High-Power NPN Silicon Power Transistor 30A 6 PIN TRANSISTORS 566	PDF
Untitled Abstract: No abstract text available Text: SEMELAB PLC hGE D • Û1331Û7 OOODbfiH bH3 MOSPOWER4 IGBT = rr= SEM E LAB SML45G100BN 1000V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	SML45G100BN MIL-STD-750 O-247AD	PDF
transistor TT 2146 Abstract: APT50G50BN APT50G60BN APT50G60 538J Text: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR	OCR Scan	APT50G60BN APT50G50BN O-247AD transistor TT 2146 APT50G60 538J	PDF
2sc5194-t1 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz	OCR Scan	2SC5194 2SC5194-T2 2sc5194-t1	PDF

TRANSISTOR D 819 Search Results

TRANSISTOR D 819 Result Highlights (5)

TRANSISTOR D 819 Datasheets Context Search

BUX45

transistor NEC D 822 P

Untitled

tip122 tip127 audio amp schematic

2N2222A 338

Untitled

BLX13

DTA143TA

od300

transistor ESM 16

TRANSISTOR D 819

30011

transistor Siemens 14 S S 92

2PC945

30V-8A

D 823 transistor

Untitled

MJ100BE55

5609

sf 819 transistor

transistor BDY29

Untitled

transistor TT 2146

2sc5194-t1