TRANSISTOR D 822 P Search Results

TRANSISTOR D 822 P Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 822 P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
telefunken IC 121 Abstract: No abstract text available Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure	Original	D-74025 telefunken IC 121	PDF
sot234 jt Abstract: No abstract text available Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01	OCR Scan	PCA84C122; 7110fl2b 711DflSb sot234 jt	PDF
Hitachi DSA002732 Abstract: No abstract text available Text: Hitachi Single-Chip Microcomputer H8/3052 F-ZTATTM HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF Hardware Manual ADE-602-180A Rev. 2.0 3/23/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s	Original	H8/3052 HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF ADE-602-180A H8/3052F-ZTAT H8/3048F-ZTAT. Hitachi DSA002732	PDF
Hitachi DSA002734 Abstract: No abstract text available Text: Hitachi Single-Chip Microcomputer H8/3052 F-ZTATTM HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF Hardware Manual ADE-602-180A Rev. 2.0 3/23/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s	Original	H8/3052 HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF ADE-602-180A H8/3052F-ZTAT H8/3048F-ZTAT. Hitachi DSA002734	PDF
transistor Siemens 14 S S 92 Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B Text: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A	OCR Scan	fl23StiQS BRY561» Q68000-A803 Q68000-A803-S1 Q68000-A803-S2 Q68000-A803-S3 23SbGS 02BStaQS GG04777 BRY56 transistor Siemens 14 S S 92 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B	PDF
Untitled Abstract: No abstract text available Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid	OCR Scan	IRF630 21A-06 O-220AB) b3b7254	PDF
MJE2370 Abstract: 2sc 1473 Text: MJE2370 silicon 3.0 AMPERE POWER TRANSISTOR PNP SILICON MEDIUM-POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers as drivers and as switches. • Low Collector-Emitter Saturation Voltage V cE(sat) = 0-7 Vdc (Max) @ l c “ 1.0 Ade	OCR Scan	MJE2370 MJE2S20 MJE2370 2sc 1473	PDF
Untitled Abstract: No abstract text available Text: 32E D • ISIP Ô23b320 001724b S S M B T 4126 PNP Silicon Sw itching Transistor SIEMENS/ SPCL-, SEMICONDS _ T - 3 7 - I5 " High current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Type M arking Ordering code for ve rsio ns in bulk Ordering code for	OCR Scan	23b320 001724b S3b32Q	PDF
2SK822 Abstract: TD-4002 TD400 Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)	OCR Scan	2SK822 2SK822 1987M TD-4002 TD400	PDF
ON Semiconductor marking 821 Abstract: No abstract text available Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings	OCR Scan	10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821	PDF
BUX45 Abstract: transistor et 460 Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection	OCR Scan	CB-19 BUX45 transistor et 460	PDF
MG160S1UK1 Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG160S1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector • With Built-in • High DC is Isolated from Case Free Whee l i n g Diode C u r r e n t G a in: hpg=100 Min. (IC =1 6 0 A )	OCR Scan	MG160S1UK1 MG160S1UK1	PDF
da qz transistor Abstract: transistor qz n channel mosfet 500 mA 400 v N and P MOSFET Text: A dvanced I / I 1 lia Z S S / L in e a r ALD1107/ALD1117 D e v ic e s , I n c . QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance ment mode matched MOSFET transistor arrays intended fora broad range	OCR Scan	ALD1107/ALD1117 ALD1107/ALD1117 ALD1106 ALD1116 ALD1101 ALD1103) ALD1102 da qz transistor transistor qz n channel mosfet 500 mA 400 v N and P MOSFET	PDF
BLX13 Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971 Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested	OCR Scan	711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971	PDF

stetron Abstract: No abstract text available Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode	OCR Scan	VT60D\SICVAR SDL-080-131 SDL-098-231 100mA: stetron	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear	OCR Scan	DD3T433 BLW83	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SA1822 2 S A 1 822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION Î.2 ± 0.2 1 0 1 0.3 • Excellent Switching Times ton = 1.0//s Max. , tf=1.0,«s (Max.) at I e = - 0 .3 A	OCR Scan	2SA1822	PDF
a13 sot23-5 Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5 Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we	Original	LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 a13 sot23-5 sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5	PDF
D 823 transistor Abstract: transistor PH ON 823 m Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage	OCR Scan	OT223 BFG31. BFG97 D 823 transistor transistor PH ON 823 m	PDF
43120203664 Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear	OCR Scan	BLW83 711002b 00b3337 BLW83 43120203664 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor	PDF
BFG96 Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor Text: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V	OCR Scan	BFG96 711005b OT103 BFG32. MSB037 OT103. BFG96 TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor	PDF
712 transistor smd sot23 Abstract: 33m ph diode smd transistor 718 diode PH 33m Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056	OCR Scan	SX3512 SX5020 712 transistor smd sot23 33m ph diode smd transistor 718 diode PH 33m	PDF
HD64F3052F Abstract: 868 printed antenna design HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE TAA 691 Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.	Original	H8/3052F-ZTAT H8/3048F-ZTAT. H8/3052 HD64F3052F 868 printed antenna design HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE TAA 691	PDF

TRANSISTOR D 822 P Search Results

TRANSISTOR D 822 P Result Highlights (5)

TRANSISTOR D 822 P Datasheets Context Search

telefunken IC 121

sot234 jt

Hitachi DSA002732

Hitachi DSA002734

transistor Siemens 14 S S 92

Untitled

MJE2370

Untitled

2SK822

ON Semiconductor marking 821

BUX45

MG160S1UK1

da qz transistor

BLX13

stetron

Untitled

transistor NEC D 822 P

Untitled

a13 sot23-5

D 823 transistor

43120203664

BFG96

712 transistor smd sot23

HD64F3052F