Motorola 680
Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT
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MRF9822T1/D
MRF9822T1
MRF9822/D
Motorola 680
Case 449-02
Motorola transistor 358
TRANSISTOR Z4
marking Z4
marking Z6
MRF9822T1
transistor 9822
nippon ferrite
vk200 ferrite bead
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Motorola transistor 358
Abstract: Case 449-02
Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT
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MRF9822T1/D
MRF9822T1
MRF9822T1
MRF9822T1/D
Motorola transistor 358
Case 449-02
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT
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MRF9822T1/D
MRF9822T1
MRF9822/D
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MRF141
Abstract: MOSFET RF POWER
Text: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS
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MRF141
MRF141
112x45°
MOSFET RF POWER
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BLF177
Abstract: hf power transistor mosfet blf177 mosfet
Text: BLF177 HF/VHF POWER MOS TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The ASI BLF177 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for industrial and military applications in the HF/ VHF frequency range. .112x45° S FULL R D Ø.125 NOM.
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BLF177
BLF177
112x45°
hf power transistor mosfet
blf177 mosfet
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Untitled
Abstract: No abstract text available
Text: m 2N2647 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO -18 M O D MAXIMUM RATINGS lc 2.0 A (PULSED) 30 V VCE P 300 m W @ Tc = 25 °C
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2N2647
2N2647
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Untitled
Abstract: No abstract text available
Text: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C
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2N6038
O-126
15OOO
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j48 transistor
Abstract: TRANSISTOR j4 ASI10545 AJT015
Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm
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AJT015
AJT015
j48 transistor
TRANSISTOR j4
ASI10545
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Untitled
Abstract: No abstract text available
Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm
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AJT015
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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2N3702
Abstract: transistor 2N3702 2n3702 transistor
Text: 2N3702 SILICON PNP TRANSISTOR DESCRIPTION: The 2N3702 is a Medium Signal Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS 200 mA V o m Ic 25 V P d is s 360 mW @ Ta # 25 0C t stg -65 0C to +150 0C 0 jc
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2N3702
transistor 2N3702
2n3702 transistor
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2SC2782
Abstract: NPN 2SC2782 transistor 2sc2782
Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V
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2SC2782
2SC2782
to175
NPN 2SC2782
transistor 2sc2782
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AJT150
Abstract: ASI10548
Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:
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AJT150
ASI10548
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2N3711
Abstract: transistor 2N3711
Text: 2N3711 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3711 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS SO mA V o m Ic SO V p d is s SeO mW @ Ta = 25 0C Tj -e5 0C to &15O 0C
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2N3711
transistor 2N3711
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transistor te 2443
Abstract: 2N3740A
Text: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C
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2N3740A
2N3740A
RAD8-89
RAD190
transistor te 2443
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1000c
Abstract: 2N6677
Text: 2N6677 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 15 A Ib 5.0 A 400 V O m le < MAXIMUM RATINGS 175 W @ Te # 25 °C P d is s Tj -65 0C to +200 0C
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2N6677
1000c
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AVD400
Abstract: ASI10567 818 transistor
Text: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I
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AVD400
AVD400
ASI10567
818 transistor
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AVF450
Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:
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AVF450
AVF450
ASI10575
D 1803 TRANSISTOR
TRANSISTOR 1003
1034 transistor
TACAN
ASI10575
395 transistor
transistor b 1166
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Untitled
Abstract: No abstract text available
Text: 2N6660 MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS 1.1 A @ T c " 25 °C 800 mA @ T c " 100 °C lc -55 °C to *150 °C o < Ts t g m Tj V d s " 60 V
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2N6660
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2N3054A
Abstract: No abstract text available
Text: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s
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2N3054A
RAD8-89
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AVF1000
Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w
Text: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks
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AVF1000
AVF1000
000W/1090
c 1685
transistor 1334
transistor 1000W
1000W TRANSISTOR
NPN 1000w
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D 1651 transistor
Abstract: AJT030 ASI10546
Text: AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N O A The ASI AJT030 is a Class-c RF power transistor, designed for JTIDS pulsed output & driver applications from 960 to 1215 MHz. B E K D C .062 x 45° M G FEATURES: F Ø.120
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AJT030
AJT030
D 1651 transistor
ASI10546
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Untitled
Abstract: No abstract text available
Text: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE T0-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. DIMENSIONS mm A B C D E F G H L M N P R S T U MAXIMUM RATINGS Ie 10 A IB 4.0 A o
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2N6098
T0-220
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Untitled
Abstract: No abstract text available
Text: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C
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2N3741
2N3741
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