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    TRANSISTOR D1857 Search Results

    TRANSISTOR D1857 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D1857 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D1857A

    Abstract: IC 4047 D1857 IC 4047 datasheet BTB1236AE3 BTD1857AE3
    Text: CYStech Electronics Corp. Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description • High BVCEO • High current capability • Complementary to BTB1236AE3 Symbol Outline BTD1857AE3


    Original     		C855E3 BTD1857AE3 BTB1236AE3 O-220AB UL94V-0 D1857A IC 4047 D1857 IC 4047 datasheet BTB1236AE3 BTD1857AE3 PDF

    D1857A

    Abstract: D1857 BTB1236AT3 BTD1857AT3
    Text: CYStech Electronics Corp. Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description • High BVCEO • High current capability • Complementary to BTB1236AT3 Symbol Outline BTD1857AT3


    Original     		C855T3 BTD1857AT3 BTB1236AT3 O-126 UL94V-0 D1857A D1857 BTB1236AT3 BTD1857AT3 PDF

    D1857A

    Abstract: D1857 BTD1857AI3
    Text: CYStech Electronics Corp. Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description • High BVCEO • High current capability • Complementary to BTB1236AI3 Symbol Outline BTD1857AI3


    Original     		C855I3 BTD1857AI3 BTB1236AI3 O-251 UL94V-0 D1857A D1857 BTD1857AI3 PDF

    d1857a

    Abstract: D1857 BTD1857AJ3
    Text: CYStech Electronics Corp. Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AJ3 Description • High BVCEO • High current capability • Complementary to BTB1236AJ3 Symbol Outline BTD1857AJ3


    Original     		C855J3 BTD1857AJ3 BTB1236AJ3 O-252 UL94V-0 d1857a D1857 BTD1857AJ3 PDF

    d1857a

    Abstract: D1857 BTD1857AFP
    Text: CYStech Electronics Corp. Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description • High BVCEO • High current capability • Complementary to BTB1236AFP Symbol Outline BTD1857AFP


    Original     		C855FP BTD1857AFP BTB1236AFP O-220FP UL94V-0 d1857a D1857 BTD1857AFP PDF

    d1857

    Abstract: TRANSISTOR d1857 BTD1857A3 NPN transistor ECB TO-92 BTB1236A3 D1857 TRANSISTOR
    Text: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package


    Original     		C855A3 BTD1857A3 BTB1236A3 UL94V-0 d1857 TRANSISTOR d1857 BTD1857A3 NPN transistor ECB TO-92 BTB1236A3 D1857 TRANSISTOR PDF

    D1857A

    Abstract: D1857 BTD1857AI3
    Text: CYStech Electronics Corp. Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description • High BVCEO • High current capability • Complementary to BTB1236AI3 • Pb-free package


    Original     		C855I3 BTD1857AI3 BTB1236AI3 O-251 UL94V-0 D1857A D1857 BTD1857AI3 PDF

    D1857

    Abstract: D1857A 06248 BTB1236AE3 BTD1857AE3
    Text: CYStech Electronics Corp. Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description • High BVCEO • High current capability • Complementary to BTB1236AE3 • Pb-free package


    Original     		C855E3 BTD1857AE3 BTB1236AE3 O-220AB UL94V-0 D1857 D1857A 06248 BTB1236AE3 BTD1857AE3 PDF

    d1857a

    Abstract: D1857 BTB12 BTD1857AD3
    Text: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package


    Original     		C855D3 BTD1857AD3 BTB1236AD3 O-126ML UL94V-0 d1857a D1857 BTB12 BTD1857AD3 PDF

    D1857A

    Abstract: D1857 BTB1236AT3 BTD1857AT3
    Text: CYStech Electronics Corp. Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description • High BVCEO • High current capability • Complementary to BTB1236AT3 • Pb-free package


    Original     		C855T3 BTD1857AT3 BTB1236AT3 O-126 UL94V-0 D1857A D1857 BTB1236AT3 BTD1857AT3 PDF

    D1857

    Abstract: d1857a BTD1857AFP
    Text: CYStech Electronics Corp. Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description • High BVCEO • High current capability • Complementary to BTB1236AFP • Pb-free package


    Original     		C855FP BTD1857AFP BTB1236AFP O-220FP UL94V-0 D1857 d1857a BTD1857AFP PDF

    D1857

    Abstract: TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2006.03.17 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package


    Original     		C855A3 BTD1857A3 BTB1236A3 UL94V-0 D1857 TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A PDF

    d1857a

    Abstract: D1857 BTD1857AJ3
    Text: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD1857AJ3 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2009.02.04 Page No. : 1/6 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3


    Original     		BTD1857AJ3 C855J3 BTB1236AJ3 O-252 UL94V-0 d1857a D1857 BTD1857AJ3 PDF

    D1857

    Abstract: 2SK3298B 2SK3298B-S17-AY mosfet 2SK329
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3298B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


    Original     		2SK3298B 2SK3298B 2SK3298B-S17-AY O-220 MP-45F) D1857 2SK3298B-S17-AY mosfet 2SK329 PDF

    d1878

    Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


    Original     		2SK4070 2SK4070 2SK4070-S15-AY -S27-AY 2SK4070-ZK-E1-AY 2SK4070-ZK-E2-AY O-251 d1878 D1857 2SK4070-S15-AY 2SK4070-ZK-E1-AY PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


    Original     		2SK4070 2SK4070 2SK4070-S15-AY O-251 O-252ntrol PDF

    d1878

    Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    D1857

    Abstract: 2SK3299B-S19-AY MP-25
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    D1857

    Abstract: mosfet 4702 2SK3298B-S17-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF