TRANSISTOR DATA 3150 Search Results

TRANSISTOR DATA 3150 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR DATA 3150 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor	Original	M3D088 PBSS8110T R75/02/pp12 771-PBSS8110TT/R	PDF
sot23 marking u8 Abstract: PBSS8110T PBSS9110T Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor	Original	M3D088 PBSS8110T R75/02/pp12 sot23 marking u8 PBSS8110T PBSS9110T	PDF
transistor s46 Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X	Original	M3D109 PBSS5350X SC-62) R75/03/pp12 transistor s46 SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T	Original	M3D088 PBSS8110T R75/02/pp12	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X	Original	M3D109 PBSS5350X SC-62) R75/03/pp12	PDF
transistor s46 Abstract: marking S46 sot89 PBSS4350X PBSS5350X Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor	Original	M3D109 PBSS5350X SC-62) SCA76 R75/03/pp12 transistor s46 marking S46 sot89 PBSS4350X PBSS5350X	PDF
transistor s46 Abstract: marking code s46 PBSS4350x PBSS5350X Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor	Original	M3D109 PBSS5350X SC-62) SCA75 R75/02/pp11 transistor s46 marking code s46 PBSS4350x PBSS5350X	PDF
transistor s46 Abstract: marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X FEATURES QUICK REFERENCE DATA	Original	M3D109 PBSS5350X SC-62) SCA75 613514/01/pp12 transistor s46 marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book	PDF
free transistor equivalent book Abstract: transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor	Original	M3D088 PBSS8110T SCA75 R75/02/pp12 free transistor equivalent book transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
Transistor J550 Abstract: j584 transistor Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor	PDF
smd transistor 6g Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance	Original	BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component	PDF
BLS7G2933S-150 Abstract: a 3150 data sheet JESD625-A Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF

BLS7G2933S-150 Abstract: radar amplifier s-band SOT922-1 JESD625-A Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
Untitled Abstract: No abstract text available Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
TRANSISTOR SMD MARKING CODE 42 Abstract: TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS Text: PMEM4030PS PNP transistor/Schottky rectifier module Rev. 01 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1	Original	PMEM4030PS OT96-1 SO8/MS-012) PMEM4030NS. TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS	PDF
2SC6082 Abstract: Sanyo ic ENA0279 Text: 2SC6082 Ordering number : ENA0279 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features	Original	2SC6082 ENA0279 A0279-4/4 2SC6082 Sanyo ic ENA0279	PDF
transistor c6082 Abstract: ENA0279B 2SC6082 C6082 Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	ENA0279B 2SC6082 PW10s, A0279-7/7 transistor c6082 ENA0279B 2SC6082 C6082	PDF
transistor c6082 Abstract: No abstract text available Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	2SC6082 ENA0279B A0279-7/7 transistor c6082	PDF
transistor c6082 Abstract: c6082 ENA0279A Text: 2SC6082 Ordering number : ENA0279A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	ENA0279A 2SC6082 PW10s, A0279-5/5 transistor c6082 c6082 ENA0279A	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF

TRANSISTOR DATA 3150 Search Results

TRANSISTOR DATA 3150 Result Highlights (5)

TRANSISTOR DATA 3150 Datasheets Context Search

Untitled

sot23 marking u8

transistor s46

Untitled

Untitled

transistor s46

transistor s46

transistor s46

free transistor equivalent book

rjh3047

Transistor J550

smd transistor 6g

BLS7G2933S-150

transistor d 1302

BLS7G2933S-150

Untitled

Untitled

Untitled

TRANSISTOR SMD MARKING CODE 42

2SC6082

transistor c6082

transistor c6082

transistor c6082

Motorola transistors MRF 947