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    TRANSISTOR DI 960 Search Results

    TRANSISTOR DI 960 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DI 960 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    702 TRANSISTOR smd

    Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
    Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on


    OCR Scan     		O-220 BUZ101L C67078-S1355-A2 702 TRANSISTOR smd smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code PDF

    transistor ag qs

    Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
    Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ


    OCR Scan     		SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2 transistor ag qs transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8 PDF

    004II

    Abstract: No abstract text available
    Text: SIEMENS SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/di rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type V|ds ¡0 R DS on Package Ordering Code SPD28N05L 55 V


    OCR Scan     		SPD28N05L SPU28N05L P-T0252 P-T0251 Q67040 S4122 S4114 004II PDF

    B60S

    Abstract: HFA04TB60S IRFP250
    Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC


    Original     		PD-96035 HFA04TB60SPbF HFA04TB60S HFA04T B60S IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PD-96033 HFA15TB60SPbF HFA15TB60S HFA15T PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC


    Original     		PD-96032 HFA30TA60CSPbF HFA30TA60CS HFA30T PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC


    Original     		PD-96039 HFA25TB60SPbF 112nC HFA25TB60S HFA25TB60S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		HFA16TA60CSPbF HFA16TA60CS HFA16T A60CS PDF

    HFA08TB60S

    Abstract: IRFP250 Ultrafast Recovery diode 18ns
    Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PD-96037 HFA08TB60SPbF HFA08TB60S HFA08T IRFP250 Ultrafast Recovery diode 18ns PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96061 HFA08TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.8V Qrr * = 40nC 1 Benefits di rec M/dt * = 280A/µs


    Original     		PD-96061 HFA08TA60CSPbF HFA08TA60CS HFA08TA60CS PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PD-96033 HFA15TB60SPbF HFA15TB60S 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC


    Original     		PD-96035 HFA04TB60SPbF HFA04TB60S 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PD-96037 HFA08TB60SPbF HFA08TB60S 08-Mar-07 PDF

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S O-220 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor PDF

    HFA30TA60CS

    Abstract: IRFP250 hfa30ta60cspbf
    Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC


    Original     		PD-96032 HFA30TA60CSPbF HFA30TA60CS 12-Mar-07 IRFP250 hfa30ta60cspbf PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC


    Original     		PD-96039 HFA25TB60SPbF 112nC HFA25TB60S 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC


    Original     		PD-96032 HFA30TA60CSPbF HFA30TA60CS 08-Mar-07 PDF

    HFA25TB60S

    Abstract: IRFP250
    Text: PD-96039 HFA25TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VF typ. * = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC


    Original     		PD-96039 HFA25TB60SPbF 112nC HFA25TB60S 12-Mar-07 IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		HFA16TA60CSPbF HFA16TA60CS 08-Mar-07 PDF

    HFA08TB60S

    Abstract: IRFP250
    Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PD-96037 HFA08TB60SPbF HFA08TB60S 12-Mar-07 IRFP250 PDF

    IRFP250

    Abstract: HFA16TA60CS 94059
    Text: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		HFA16TA60CSPbF HFA16TA60CS 12-Mar-07 IRFP250 94059 PDF

    B60S

    Abstract: HFA04TB60S IRFP250 94036
    Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC


    Original     		PD-96035 HFA04TB60SPbF HFA04TB60S 12-Mar-07 B60S IRFP250 94036 PDF

    transistor SMD MARKING CODE HF

    Abstract: smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S 12-Mar-07 transistor SMD MARKING CODE HF smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S 08-Mar-07 PDF