9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
|
Original
|
IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
|
PDF
|
IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
|
Original
|
IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
|
PDF
|
marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
|
Original
|
IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
|
PDF
|
AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
|
Original
|
IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
|
PDF
|
electromatic s system sv 115 230
Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Text: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo gues. This innovation should facilitate your survey of our entire
|
OCR Scan
|
|
PDF
|
h7d marking
Abstract: No abstract text available
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W4EHB:M?:;8;IJ/ =L"a`#?D1, W EM;IJ<?=KH;E<C;H?J/,+N.Y V !08M\_Sj .) O R =L"a`#%_Sj )'*-) -1 `< Q Y%fkb W2BJH7BEM=7J;9>7H=; W"NJH;C;:L :JH7J;:
|
Original
|
IPA50R140CP
97F78
799EH:
h7d marking
|
PDF
|
7H diode
Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO
|
Original
|
IPA50R140CP
799EH
7H diode
IPA50R140CP
DIODE marking ED X9
diode marking BEM
LM7m
|
PDF
|
transistor marking hy
Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY
|
Original
|
STT3PF20V
OT23-6L
OT23-6L
transistor marking hy
PHV6
KDu TRANSISTOR
7L SOT23
MARKING QV sot23
7L Marking
990L
marking hu sot23
STT3PF20V
|
PDF
|
SD42524
Abstract: No abstract text available
Text: SD42524 1A High Power LED Driver with 6～36V Input DESCRIPTION The SD42524 is a step-down PWM control LED driver with a built-in power MOSFET. It achieves 1A continuous output current in 6~36V input voltage range. It provides thermal shutdown circuit, current limit
|
Original
|
SD42524
SD42524
|
PDF
|
2N705
Abstract: I960 ARMv Germanium mesa
Text: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.
|
OCR Scan
|
MH/-S-19500/86A
I/-S-19500/86
2N705
MIL-S-19500
T0-18)
MIL-S-19500.
ruL-S-19500
2N705
I960
ARMv
Germanium mesa
|
PDF
|
MARKING SMD npn TRANSISTOR DJ
Abstract: smd transistor marking dj marking DJ SMD 2SD2098 SMD Transistor dj DJ SMD DJ* marking 2SD2098
Text: Transistors SMD Type Low VCE sat Transistor 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1
|
Original
|
2SD2098
OT-89
-50mA,
100MHz
MARKING SMD npn TRANSISTOR DJ
smd transistor marking dj
marking DJ SMD 2SD2098
SMD Transistor dj
DJ SMD
DJ* marking
2SD2098
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1
|
Original
|
2SD2098
OT-89
-50mA,
100MHz
|
PDF
|
transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
|
Original
|
IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
|
PDF
|
2SD1627
Abstract: transistor DJ 30 at n430
Text: Ordering num be-:E N 2 0 1 6 A 2SD1627 NO.2016A I NPN Epitaxial Planar Silicon Transistor SA%YO Driver Applications II Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hpg^OOO . Wide ASO
|
OCR Scan
|
2SD1627
250mm
500mA
600mA
600lnA
0-15mA
5277KI/N255KI
2SD1627
transistor DJ 30 at
n430
|
PDF
|
|
|
RN2912AFS
Abstract: RN2913AFS
Text: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
|
Original
|
RN2912AFS,
RN2913AFS
RN1912AFS/RN1913AFS
RN2912AFS
RN2913AFS
|
PDF
|
2SD1627
Abstract: 60AA
Text: Ordering number:EN 2016A 2SD1627 N0.2OI6A SANYO NPN Epitaxial Planar Silicon Transistor Driver Applications i Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hFE^4000 . Wide ASO . Very small size making it easy to provide high-density,
|
OCR Scan
|
2SD1627
60AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
|
Original
|
RN2912AFS,
RN2913AFS
RN1912AFS/RN1913AFS
|
PDF
|
rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
|
Original
|
IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
|
PDF
|
MAX3805
Abstract: MAX3805ETE PRBS231 diagram fr 310
Text: 19-2936; Rev 1; 3/06 KIT ATION EVALU E L B AVAILA 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
|
Original
|
MAX3805
RG-188A/U
95Gbps
MO220
MAX3805ETE
PRBS231
diagram fr 310
|
PDF
|
MAX3805
Abstract: MAX3805ETE PRBS231 FR4 dielectric constant vs temperature
Text: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
|
Original
|
MAX3805
RG-188A/U
95Gbps
MO220
MAX3805ETE
PRBS231
FR4 dielectric constant vs temperature
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M O SII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8
|
OCR Scan
|
TPC8303
27mfl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GP1A73A/GP1A73A1 SHARP GP1A73A/GP1A73A1 Compact OPIC Photointerrupter with Connector I Outline Dimensions • Features U n it : m m 1. Com pact type Í5ÍL 2. TTL com patible owing to OPIC output 3. Snap-in m ounting type &Ï 4. 3 kinds o f m ounting plate thickness
|
OCR Scan
|
GP1A73A/GP1A73A1
|
PDF
|
fr4106
Abstract: 10ghz variable attenuator
Text: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
|
Original
|
MAX3805
RG-188A/U
95Gbps
MAX3805ETE
21-0136I
T1633FH-3*
fr4106
10ghz variable attenuator
|
PDF
|
RN2112ACT
Abstract: RN2113ACT
Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
|
Original
|
RN2112ACT
RN2113ACT
RN1112CT,
RN1113CT
RN2113ACT
|
PDF
|
