MMDT2222A
Abstract: MMDT2907A
Text: MMDT2222A /RANSYS ELECTRONICS LIMITED DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 R R e KXX E5 O Mechanical Data_
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MMDT2222A
MMDT2907A)
OT-363,
MIL-STD-202,
MMDT2222A
150mA,
500mA,
100MHz
MMDT2907A
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RN5RL
Abstract: No abstract text available
Text: Rj[\m PRELIMINARY \ E5-114-9107 VOLTAGE REGULATOR RN5RL Series The R N 5R L series, developed with CMOS process technology, are highly accurate, low-power-consumption, voltage regulators which include reference voltage supply, error amplifier, control transistor, and
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E5-114-9107
OT-23)
OT-23-5
OT23-5)
RN5RL
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Hitachi DSA002715
Abstract: No abstract text available
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127FP
DP-14
FP-14DA
Hitachi DSA002715
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HA1127
Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Text: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11
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HA1127/P/FP
ADE-204-062
HA1127
DP-14
HA1127P
HA1127FP
FP-14DA
HA1127
Hitachi DSA0076
HA1127P
DP-14
FP-14DA
HA1127FP
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HA1127P
Abstract: HA1127 HA1127FP IC503
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2 6 9 B4 E2 7 8 C3 (Top view) Note: Use pin 13 as the lowest potential for this IC. 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C)
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127
HA1127FP
IC503
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BUK456-50A
Abstract: drain BUK456 BUK456-50B T0220AB
Text: E5 E N AMER PHILIPS/DISCRETE ^£3=131 D 0Q20S20 S B U K 456-50A B U K 456-50B P o w erM O S tra n s isto r G E N E R A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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002GSE0
BUK456-50A
BUK456-50B
BUK456
BUK456-50A
drain
BUK456-50B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Datasheet N410 User-friendly batch controller Reliable Batch Controller with numerical keypad, remote control inputs and 3 control / alarm / pulse outputs Advantages Outputs Save time and cost with the easy to operate numerical keypad. Two field replaceable, heavy duty, mechanical relays make-and-break/
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N410-DATA-EN-V1350
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Untitled
Abstract: No abstract text available
Text: Datasheet N410 User-friendly batch controller Reliable Batch Controller with numerical keypad, remote control inputs and 3 control / alarm / pulse outputs Advantages Outputs Save time and cost with the easy to operate numerical keypad. Two field replaceable, heavy duty, mechanical relays make-and-break/
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N410-DATA-EN-V1406
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VIBRATION LIMIT SWITCH
Abstract: LVL-Z64 LIMIT SWITCH namur application 1.4571 resistant pg11 cable gland AC 128 pnp transistor "din 7603" DIN 7603 BSP 1 thread 14571
Text: Vibration limit switch Dimensions ~120 A ø40 A PG11 cable gland IP65/67) B) Test magnet C) G1A (cylindrical), 1 NPT (conical), R 1 (conical), made of corrosion resistant steel D) Vibration fork made of heavy duty corrosion resistant steel E) Green light-emitting diode "ready to operate"
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IP65/67)
IP65/IP67
VIBRATION LIMIT SWITCH
LVL-Z64
LIMIT SWITCH namur application
1.4571 resistant
pg11 cable gland
AC 128 pnp transistor
"din 7603"
DIN 7603
BSP 1 thread
14571
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transistor BC 567
Abstract: transistor BC 568 5E55
Text: AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
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AO5804E
AO5804E/L
AO5804E
AO5804EL
-AO5804EL
SC-89-6
Volt56555E
5655E
3D6943
D91A3
transistor BC 567
transistor BC 568
5E55
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transistor BC 567
Abstract: f36 transistor ED-7 transistor BC 339
Text: AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
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AO5404E
AO5404E/L
AO5404E
AO5404EL
-AO5404EL
SC89-3L
56555E
5655E
3D6953
D91A3
transistor BC 567
f36 transistor
ED-7
transistor BC 339
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sot-89 marking E5
Abstract: E5 sot223 E5 sot89 marking E5 amplifier ceramic capacitor E5 sot-89 E5 CM2865 MARKING E5 SOT89 2865a marking E5 sot-89
Text: CM2865 A E5 350mA CMOS LDO HIGH ACCURACY VOUT 1.0% GENERAL DESCRIPTION FEATURES The CM2865/A family is a positive voltage linear regulator Very Low Dropout Voltage developed utilizing CMOS technology featured low quiescent Low Current Consumption: Typ. 30 A, Max. 35μA
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CM2865
350mA
CM2865/A
OT-89
OT-223
OT-223
sot-89 marking E5
E5 sot223
E5 sot89
marking E5 amplifier
ceramic capacitor E5
sot-89 E5
MARKING E5 SOT89
2865a
marking E5 sot-89
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Infrared LED 940nm
Abstract: OBT200-18GM60-E4-V1 OBT200-18GM60-E5-V1 OBE10M-18GM60-SE4-V1 ORR50 OBS4000-18GM60-E5 OBT200-18GM60-E4 OSP18B OCH100-18GM70-A0-V1 OCH100-18GM70-A2-V1
Text: Photoelectric Sensors Basic Series • Up to 50% longer sensing ranges than previous versions • Housing lengths as short as 60mm 2 3/8” • Cost-effective, compact sensor in a rugged metal housing Diffused Mode with Background Suppression Diffused Mode
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pages615-616
100mm
200mm,
500mm
OSP18A
BF5-30
OSP18B
OLA18
OBT200L-18GM70
Infrared LED 940nm
OBT200-18GM60-E4-V1
OBT200-18GM60-E5-V1
OBE10M-18GM60-SE4-V1
ORR50
OBS4000-18GM60-E5
OBT200-18GM60-E4
OSP18B
OCH100-18GM70-A0-V1
OCH100-18GM70-A2-V1
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2N4531
Abstract: SS TRANSISTOR
Text: DC250A Quick Start Guide The DC250A demonstration board contains all of the circuitry needed for evaluation of the LTC1503CMS8-1.8/2 inductorless switching regulator IC. To begin, simply connect an input power supply to VIN E3 and GND (E4) (see Figure 1). Connect the load between VOUT (E2) and
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DC250A
LTC1503CMS8-1
LTC1503CMS-1
100mA.
33ohm
LTC1503CMS8
2N4531
SS TRANSISTOR
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k3hb-x manual
Abstract: hr31 humidity sensor K3HB-XVD K33FLK3B Honda Connectors 20 pin half pitch 7 segment com cat display blue
Text: Process Indicator K3HB-X CSM_K3HB-X_DS_E_6_1 A Process Indicator Ideal for Discriminating and Displaying Measurements for Voltage/Current Signals • Easy recognition of judgement results using color display that can be switched between red and green. • Equipped with a position meter for monitoring operating status trends.
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IP66e
k3hb-x manual
hr31 humidity sensor
K3HB-XVD
K33FLK3B
Honda Connectors 20 pin half pitch
7 segment com cat display blue
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K72 V3
Abstract: transistor bipolar k72 transistor k72 x5 transistor k72 t8 D5024 k72 v6 transistor k72 v6 k104 transistor grease k67 transistor k79
Text: ORDER NO. CPD0512063C1 Personal Computer CF-Y4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-Y4HWPZZ 1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.
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CPD0512063C1
EN60825
IC613
C0DBDJH00009
LTC4008EGN
JS606
JS609
B1CFGD000004
2SK3019TL
K72 V3
transistor bipolar k72
transistor k72 x5
transistor k72 t8
D5024
k72 v6 transistor
k72 v6
k104 transistor
grease k67
transistor k79
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pulse transformer bv 070
Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation
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UF281
uF261oov
7305OlB2-03
pulse transformer bv 070
145J
UF281OOV
wacom
ds12a
50 Ohm transformer
UF26
transformer
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c38 transistor
Abstract: 2160 transistor Johanson Piston Trimmer
Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a
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BATC100)
c38 transistor
2160 transistor
Johanson Piston Trimmer
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K3HB-XVD
Abstract: k3hb-x manual 17JE-13 K33FLK3B
Text: Process Indicator K3HB-X CSM_K3HB-X_DS_E_6_1 A Process Indicator Ideal for Discriminating and Displaying Measurements for Voltage/Current Signals • Easy recognition of judgement results using color display that can be switched between red and green. • Equipped with a position meter for monitoring operating status trends.
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of IC 7483
Abstract: No abstract text available
Text: XC6408 Series ETR0331-005 28V Operation Voltage Regulator with Voltage Detector GENERAL DESCRIPTION The XC6408 series is a positive voltage regulator IC manufactured using CMOS process with 28V operation voltage. The series consists of a voltage reference, an error amplifier, a current limiter, a thermal shutdown circuit and a phase compensation circuit
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XC6408
ETR0331-005
XC6408D
of IC 7483
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ceramic capacitor 39 pf
Abstract: AEA213 MEA208 IEC134
Text: Philips Sem iconduct o r s P H IL IP S 7 1 1 0 fl5 b IN T E R N A T IO N A L □ □ b 5 b ^ ^ ^ ^ T ^ ^ ^ ^ n N ^ ^ r o d u c t^ s p e c ific a tiO T bSE D UHF power transistor FEATURES Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures
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7110flgb
BLU10/12
OT122
-SOT122A
MEA208
ceramic capacitor 39 pf
AEA213
MEA208
IEC134
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FET K105
Abstract: CN902 B1DHDC000028 k522 diode D902L k105 fet R-312 panasonic radio transistor k520 transistor k84 LE80536
Text: ORDER NO. CPD0511051C1 Personal Computer CF-W4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-W4GWCZZ 1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.
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CPD0511051C1
EN60825
contrD500F-T1B-A
N2012ZP600T25
ACM2012-900-2P-T
87520-6010BPLF
CN903
N2012ZP600T25
CN901
SM12B-SRSS-TB
FET K105
CN902
B1DHDC000028
k522 diode
D902L
k105 fet
R-312 panasonic radio
transistor k520
transistor k84
LE80536
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transistor C1312
Abstract: c1312 c1251 c1312 transistor C1309 C1310 transistor C128 C1109 C1240 C1285
Text: Monsanto DESIGNER SERIES MCT274 PHOTOTRANSISTOR OPTOISOLATORS L F E A T U R E S P E C IF IC A T IO N S D E S C R IP T IO N • Controlled Current Transfer R atio — 225% to 400% specified conditions • Maxim um Turn-on tim e — 25 /¿seconds (specified condition)
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MCT274
E50151
MCT274
transistor C1312
c1312
c1251
c1312 transistor
C1309
C1310
transistor C128
C1109
C1240
C1285
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Untitled
Abstract: No abstract text available
Text: Process Indicator K3HB-X CSM_K3HB-X_DS_E_10_1 A Process Indicator Ideal for Discriminating and Displaying Measurements for Voltage/Current Signals • Easy recognition of judgement results using color display that can be switched between red and green. * • Equipped with a position meter for monitoring operating status trends.
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