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    TRANSISTOR F 13003 Search Results

    TRANSISTOR F 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 13003d

    Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
    Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value


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    Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a PDF

    13003CD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    13003CDH 290ns 13003CDHL-TM3-T 13003CDHGat QW-R223-022 13003CD PDF

    T92 DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    13003ADG 290ns 13003ADGL-TM3-T 13003ADGPat QW-R223-023 T92 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011 PDF

    NPN transistor Electronic ballast to92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018 PDF

    13003bd

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BDG 13003BDG 13003BDGL-TM3-T 13003BDGL-T60-F-K 13003BDGL-T92-F-B QW-R223-017 13003bd PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012 PDF

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d PDF

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300t QW-R223-018. PDF

    13003 TRANSISTOR

    Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
    Text: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 1.5 W(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range


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    O--220 100TYP 540TYP 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte PDF

    transistor 13003

    Abstract: PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 HE13003 13003 TRANSISTOR transistor 13003 C
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13003 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D180BG-00 芯片厚度:240±20µm 管芯尺寸:1800x1800µm 2 焊位尺寸:B 极 320×320µm 2,E 极 200×300µm 2


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    100mm D180BG-00 KSE13003HE13003 O-126/220 10VIC 125VIc transistor 13003 PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 HE13003 13003 TRANSISTOR transistor 13003 C PDF

    H0A0872

    Abstract: H0A0866 HOA0865-T55 LEM sensor CURRENT infrared sensor with pic H0A086 HOA0865 HOA087X HOAQ865-T55 HQA0865-T55
    Text: Datasheet —HOAQ865-T55 Page 1 o f 5 Honeywell HOA0865-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two-Mounting Tabs, Plastic package Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be


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    HOAQ865-T55 HOA0865-T55 HOA086X/087X HOA0865-T55 H0A0872 H0A0866 LEM sensor CURRENT infrared sensor with pic H0A086 HOA0865 HOA087X HOAQ865-T55 HQA0865-T55 PDF

    transistor 13003 AD

    Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
    Text: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:


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    ST13003 OT-32 O-126) transistor 13003 AD transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003 PDF

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


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    MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor PDF

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR PDF

    PC 13003 TRANSISTOR

    Abstract: SH 13003 SH 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 npn E 13003 b TRANSISTOR voltage REGULATOR 13003 transistor 13003 k T 13003 transistor
    Text: NPN SILICON TRANSISTOR K SH 13003 High Voltage Power Transistor D-PACK For surface Mount Applications D-PAK • High speed Switching • Suitable for Switching Regulator and Motor Control • Straight Lead I.PACK, I Suffix • Lead Formed for Surface Mount Applications(No Suffix)


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    PDF

    transistor eb 13003

    Abstract: transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 PC 13003 TRANSISTOR SH 13003 st 13003 TRANSISTOR npn transistor eb 13003 c transistor LB 13003 C
    Text: K SH 13003 NPN EPITAXIAL SILICON TRAN SISTO R HIGH VOLTAGE POW ER TRANSISTOR D-PACK FOR SU R FA CE MOUNT APPLICATIONS D-PAK • High speed Switching • Suitable for Switching Regulator Motor Control • Straight Lead I.PACK, I Suffix • Lead Formed for Surface Mount Applicattons(No Suffix)


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    KSH13003 transistor eb 13003 transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 PC 13003 TRANSISTOR SH 13003 st 13003 TRANSISTOR npn transistor eb 13003 c transistor LB 13003 C PDF