TRANSISTOR F 20 NF Search Results

TRANSISTOR F 20 NF Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR F 20 NF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON RF TRANSISTOR NE894M13 / 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	NE894M13 2SC5787 S21e2 NE894M13-A 2SC5787-A NE894M13-T3-A 2SC5787-T3-A conta160 PU10070EJ01V0DS	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356	PDF
2sc5653 Abstract: 2SC5653-T1 k 3767 NEC NPN 2SC5653 ZO 103 MA 75 623 ZO 107 MA 75 595 zo 109 ma Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5653 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES • 1006 package employed 1.0 x 0.6 × 0.5 mm • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • S21e2 = 10.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz	Original	2SC5653 S21e2 2SC5653 2SC5653-T1 k 3767 NEC NPN 2SC5653 ZO 103 MA 75 623 ZO 107 MA 75 595 zo 109 ma	PDF
2SC3356 Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356	PDF
transistor Abstract: rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION •Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS	Original	2SC2954 S21e2 500MHz transistor rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN	PDF
2SC5787 Abstract: 2SC5787-T3 CRE 6203 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	2SC5787 S21e2 2SC5787-T3 2SC5787 2SC5787-T3 CRE 6203	PDF
2SC5787 Abstract: transistor 4580 2SC5787-T3 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	2SC5787 S21e2 2SC5787-T3 2SC5787 transistor 4580 2SC5787-T3	PDF
BFR106 Abstract: No abstract text available Text: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz	Original	BFR106 500MHz 900MHz BFR106	PDF
2SC5786 Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	2SC5786 S21e2 2SC5786-T1 2SC5786 2SC5786-T1 marking UE marking 654 3pin nec 1299 662	PDF
VCO 1ghz Abstract: TOSHIBA MICROWAVE AMPLIFIER MT3S35FS Text: MT3S35FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35FS VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Low Noise Figure :NF=1.4dB @f=2GHz • High Gain:\|S21e\| =13.0dB (@f=2GHz) 2 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 2 20 3 0.1±0.05	Original	MT3S35FS VCO 1ghz TOSHIBA MICROWAVE AMPLIFIER MT3S35FS	PDF
RF TRANSISTOR 1.5 GHZ Abstract: RF TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ transistor transistor f 20 nf 2 F transistor 4 npn transistor ic RF NPN POWER TRANSISTOR 2 GHZ RF POWER TRANSISTOR NPN RF TRANSISTOR Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFS520 DESCRIPTION •Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz	Original	BFS520 S21e2 RF TRANSISTOR 1.5 GHZ RF TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ transistor transistor f 20 nf 2 F transistor 4 npn transistor ic RF NPN POWER TRANSISTOR 2 GHZ RF POWER TRANSISTOR NPN RF TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MMBR911L Silicon NPN RF Transistor DESCRIPTION • High Gain GNF = 17 dB TYP. @ lc= 10 mA, f = 500 MHz • Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz	Original	MMBR911L OT-23	PDF
MFE204 Abstract: dual-gate Text: MOTOROLA SC XSTRS/R F 15E D \| b3b?2S4 N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR 0001,732 5 \| MFE204 , CASE 20-03, STYLE 9 TO-72 TQ-206AF . . . depletion mode dual gate transistor designed and characterized for UHF communications applications.	OCR Scan	O-206AF MFE204 dual-gate	PDF

2SC3356 Abstract: TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	Original	2SC3356 2SC3356 TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise	PDF
KTC3770T Abstract: ON Semiconductor marking J50 Text: SEMICONDUCTOR KTC3770T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B K DIM A B Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=11dB f=1GHz . D F D G 3 1 RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3770T -j250 -j150 -j100 KTC3770T ON Semiconductor marking J50	PDF
transistor NEC D 822 P Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters \| S 21 \| 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA	OCR Scan	2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic	PDF
4435 power ic Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357 Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 \| S21 \| = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type	Original	2SC5336 2SC3357 4435 power ic transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357	PDF
MRF914 Abstract: No abstract text available Text: MO T O R O L A SC X S T R S / R F MbE D • b3b72Sil GQTM'iMM S ■ noTb MOTOROLA T - 3 1 - 1*5 ■ SEMICONDUCTOR TECHNICAL DATA MRF914 The E F Line fy = 4.5 GHz @ 20 mA HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for applications requiring high-gain, low-noise and	OCR Scan	b3b72Sil MRF914 MRF914	PDF
150J10 Abstract: 7011 NPN TRANSISTOR Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm	Original	NE662M04 OT-343 NE662M04 150J10 7011 NPN TRANSISTOR	PDF
MJE 15024 Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884 Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm	Original	NE662M04 OT-343 NE662M04 NE662M0anty MJE 15024 BF111 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884	PDF
RF POWER TRANSISTOR NPN Abstract: RF TRANSISTOR 2SC4537 high power npn UHF transistor Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION •Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for VHF, UHF low noise amplifier.	Original	2SC4537 900MHz RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC4537 high power npn UHF transistor	PDF
MRF914 Abstract: No abstract text available Text: MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB typ @ f = 500 MHz • Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz 2 1 3 4 • High FT - 4.5 GHz (typ) @ IC = 20 mAdc	Original	MRF914 To-72 MRF914	PDF
NA 6884 Abstract: IC AT 6884 0200E TRANSISTOR 8808 W Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES HIGH GAIN BANDWIDTH: f r = 23 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm	OCR Scan	OT-343 NE662M04 NE662M04 NA 6884 IC AT 6884 0200E TRANSISTOR 8808 W	PDF

TRANSISTOR F 20 NF Search Results

TRANSISTOR F 20 NF Result Highlights (5)

TRANSISTOR F 20 NF Datasheets Context Search

Untitled

2SC3356 s2p

2sc5653

2SC3356

2SC3356 s2p

transistor

2SC5787

2SC5787

BFR106

2SC5786

VCO 1ghz

RF TRANSISTOR 1.5 GHZ

Untitled

MFE204

2SC3356

KTC3770T

transistor NEC D 822 P

4435 power ic

MRF914

150J10

MJE 15024

RF POWER TRANSISTOR NPN

MRF914

NA 6884