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    TRANSISTOR F 370 Search Results

    TRANSISTOR F 370 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9011 transistor

    Abstract: 9011 NPN transistor 9011 G
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    9011 transistor

    Abstract: 9011 npn 9011 NPN transistor f 9011 h transistor transistor 9011 h 9011 9011 g f f 9011
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    NTE488

    Abstract: No abstract text available
    Text: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz


    Original     		PDF NTE488 NTE488 175MHz

    9011 transistor

    Abstract: 9011 ic CD4081 pin diagram datasheet 9011 G 9011 npn transistor 9011 h
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    9011 transistor

    Abstract: 9011 NPN transistor 9011 npn f 9011 h transistor 9011 f 9011 f transistor
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    LT1001A

    Abstract: transistor 335
    Text: LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM PDISS


    Original     		PDF LT1001A ASILT1001A LT1001A transistor 335

    bi 370 transistor

    Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
    Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o


    OCR Scan     		PDF CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


    OCR Scan     		PDF 40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852

    BFX60

    Abstract: Transistor BFX 90 bfx 63 Q60206-X60
    Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.


    OCR Scan     		PDF BFX60 Q60206-X60 Transistor BFX 90 bfx 63 Q60206-X60

    Transistor BFX 59

    Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
    Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher


    OCR Scan     		PDF Q60206-X Transistor BFX 59 BFX59F BFX59 kbr 1000 transistor BFX59 transistor w 04 59 Transistor BFX 4

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm


    OCR Scan     		PDF 2SC3629 2SC3629 520MHz,

    2SA1798

    Abstract: K 4005 transistor
    Text: I O rdering num ber: EN3709 z I SAMYO i 2SA1798 No.3709 f PN P Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications I F e a tu re s • Adoption of MBIT processes. • Low saturation voltage. • F ast switching speed. • Large current capacity.


    OCR Scan     		PDF EN3709 2SA1798 2SA1798 K 4005 transistor

    2SA1151

    Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
    Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>


    OCR Scan     		PDF 2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF

    2N3948

    Abstract: No abstract text available
    Text: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*


    OCR Scan     		PDF b3b72St4 2N3948 2N3948

    VHF power TRANSISTOR PNP TO-39

    Abstract: LN 7904 i31n mm4018
    Text: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli­


    OCR Scan     		PDF MM4018 VHF power TRANSISTOR PNP TO-39 LN 7904 i31n mm4018

    2SA1612

    Abstract: No abstract text available
    Text: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0


    OCR Scan     		PDF 2SA1612 2SC41801 SC-70 2SA1612

    SC2334

    Abstract: fls09 1444 G 92-0151 2SA1010
    Text: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^


    OCR Scan     		PDF 2SA1010 SC2334 SC2334 fls09 1444 G 92-0151 2SA1010

    AF280

    Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
    Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:


    OCR Scan     		PDF

    62706f

    Abstract: TD62705P TD62706P 62706P
    Text: SILICON MONOLITHIC TD62705P/F TD62706P/F BIPO LAR DIGITAL INTEGRATED CIRCUIT 6CH HIGH-VOLTAGE SOURCE DRIVER The TD62705P, TD62705F and TD62706P, TD62706F are comprised of six source current transistor array. These drivers are specifically designed for fluorescent


    OCR Scan     		PDF TD62705P/F TD62706P/F TD62705P, TD62705F TD62706P, TD62706F TD62705P TD62706P DIP16-P-300A 62706f TD62706P 62706P

    Untitled

    Abstract: No abstract text available
    Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high


    OCR Scan     		PDF AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4

    BCW88

    Abstract: C370 Q62702
    Text: BCW88 PNP Silicon planar AF transistor The epitaxial silicon planar A F transistor in its hermetically sealed glass/ceramic flat package is especially suited for use in military and space applications. The advantage of this particular package lies in its high packing density.


    OCR Scan     		PDF BCW88 Q62702â 100mA; BCW88 C370 Q62702

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


    OCR Scan     		PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S

    2N5160

    Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
    Text: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­


    OCR Scan     		PDF b3b7254 2N5160 2N3866 MIL-S-19500 MRF5160HX, MRF51 2N5160 300-MHz 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516