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    TRANSISTOR F 948 Search Results

    TRANSISTOR F 948 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 948 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Samtec

    Abstract: 1-800-SAMTEC-9
    Text: F-203 SUPPLEMENT TO–340–G TO–520–GT TRANSISTOR/TO SOCKETS TO SERIES Due to technical progress, all designs, specifications and components are subject to change without notice. WWW.SAMTEC.COM SAMTEC USA • Tel: 1-800-SAMTEC-9 or 812-944-6733 • Fax: 812-948-5047 SAMTEC UK • Tel: 01236 739292 • Fax: 01236 727113 SAMTEC GERMANY • Tel: +49 0 89 / 89460-0 • Fax: +49 (0) 89 / 89460-299


    Original     		PDF F-203 1-800-SAMTEC-9 Samtec

    irf 739 mosfet

    Abstract: IRF 740 PD-94837
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 irf 739 mosfet IRF 740 PD-94837

    hf class AB power amplifier mosfet

    Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 hf class AB power amplifier mosfet AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier

    IRF9530 mosfet circuit diagram

    Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
    Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 IRF9530 mosfet circuit diagram AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet

    amplifier circuit diagram

    Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
    Text: Index AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


    Original     		PDF AN-948 amplifier circuit diagram HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002

    Untitled

    Abstract: No abstract text available
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 12-Mar-07

    947 transistor

    Abstract: No abstract text available
    Text: BDP 947, BDP 949 Silicon NPN Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type


    Original     		PDF VPS05163 OT-223 Oct-22-1999 947 transistor

    947 transistor

    Abstract: transistor a 949 VPS05163 TRANSISTOR bdp 948
    Text: BDP 947, BDP 949 Silicon NPN Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type Marking


    Original     		PDF VPS05163 OT-223 Oct-22-1999 947 transistor transistor a 949 VPS05163 TRANSISTOR bdp 948

    f1010

    Abstract: flyback transformer 63a irf 1490 6-0A36
    Text: PD- 94828 IRF740APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740APbF O-220AB f1010 flyback transformer 63a irf 1490 6-0A36

    transistor f 948

    Abstract: TRANSISTOR bdp 948 BDP947 BDP949 Q62702-D1336 Q62702-D1338 f 948
    Text: BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 NPN Type Marking Ordering Code Pin Configuration


    Original     		PDF BDP947, BDP949 Q62702-D1336 OT-223 Q62702-D1338 Nov-28-1996 transistor f 948 TRANSISTOR bdp 948 BDP947 BDP949 Q62702-D1336 Q62702-D1338 f 948

    irf740apbf

    Abstract: Pulse-10
    Text: PD- 94828 IRF740APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740APbF O-220AB 12-Mar-07 irf740apbf Pulse-10

    Untitled

    Abstract: No abstract text available
    Text: PD- 94828 IRF740APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740APbF O-220AB 08-Mar-07

    IRFB11N50A

    Abstract: IRFI840G
    Text: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF IRFIB7N50APbF O-220 IRFI840G IRFB11N50A IRFI840G

    transistor MWTA 06

    Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
    Text: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %


    OCR Scan     		PDF 2SJ202 2SK1580 transistor MWTA 06 transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580

    smd diode T42

    Abstract: No abstract text available
    Text: SPD 30N03L Infineon technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode V ^DS Drain-Source on-state resistance WDS on 0.012 f i 30 A b Continuous drain current • Avalanche rated 30 Drain source voltage • Logic Level


    OCR Scan     		PDF 30N03L P-T0252 Q67040-S4148-A2 Q67040-S4149-A2 SPU30N03L SPD30N03L S35bG5 SQT-89 B535bQ5 D13377Ã smd diode T42

    Untitled

    Abstract: No abstract text available
    Text: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors


    OCR Scan     		PDF DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV 314TK 314TS 314TF 314TL/D 314TA 314TV -71-JfJ 50mA/

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter


    OCR Scan     		PDF O-218AA C67078-S3130-A2 A235bG5

    d634

    Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
    Text: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector


    OCR Scan     		PDF 2SD634, 2SD633, 2SD635 d634 d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634

    1RF532

    Abstract: 1RF9532 AN-948A IRF9532 equivalent 948a IRF532 equivalent
    Text: APPLIC A T IO N NO TE 948A Linear Power Amplifier @ Using Complementary HEXFETs By Peter Wilson Introduction The class A B amplifier described in this application note uses a com­ plementary pair of H EXFET devices as the output stage. This feature offers performance improvements


    OCR Scan     		PDF 100kHz, 100kHz 47Kft 100kHz 25kHz 1RF532 IRF9532 AN-948A 1RF9532 AN-948A IRF9532 equivalent 948a IRF532 equivalent

    transistor f 948

    Abstract: TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217
    Text: SIEMENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low cotiector-emitter saturation voltage BDP 948 BDP 948 Q62702-D1336 1=B o CO BDP 950 BDP 950 Q62702-D1338 1= B 2=C CO


    OCR Scan     		PDF BDP947, BDP949 Q62702-D1336 Q62702-D1338 OT-223 OT-223 BDP948 transistor f 948 TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217

    transistor f 948

    Abstract: No abstract text available
    Text: SIEM ENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 NPN 2 1 SOT-223 SOT-223 II O il li


    OCR Scan     		PDF BDP947, BDP949 OT-223 Q62702-D1338 Q62702-D1336 fl235fc E35bD5 D1S1D31 D1S1D32 transistor f 948

    b0945

    Abstract: bd947 BD944 BD945 BD943
    Text: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA


    OCR Scan     		PDF BD944; BD943 lc-500mA O-220. BD947. 7Z82147 7Z82146 003MS40 BD945 b0945 bd947 BD944 BD945 BD943

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223