Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR F13 10 Search Results

    TRANSISTOR F13 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F13 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor F13

    Abstract: No abstract text available
    Text: DTB143EK Digital transistor, PNP, with 2 resistors Features • available in SMT3 SMT, SC-59 package Dimensions (Units : mm) DTB143EK (SMT3) • package marking: DTB143EK; F13 • a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		DTB143EK SC-59) DTB143EK; DTB143EK transistor F13 PDF

    transistor F13

    Abstract: transistor F13 10
    Text: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882


    Original     		TSB772 O-126 -200mA 200mA TSD882 TSB772CK O-126 250pcs transistor F13 transistor F13 10 PDF

    F13 SOT23

    Abstract: No abstract text available
    Text: TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOP-8 SOT-89 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C


    Original     		TS78L00 100mA OT-23 OT-89 TS78L00ACY TS78L00CY 100mA. TS7800 TS78M00 F13 SOT23 PDF

    transistor F13

    Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
    Text: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		NJ26L 2N5397, 2N5398 30ion transistor F13 transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212 PDF

    DTB143EC

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •E x te rn a l dimensions (Units: mm) •F e a tu re s 1) Built-in bias resistors en ab le the configuration of an inverter circuit 2 .9 + 0 .2 DTB143EK + 1 1 0.2 1 .9 ± 0 .2


    OCR Scan     		DTB143EK/DTB143EC/DTB143ES DTB143EK DTB143EK DTB143EC DTB143ES -10rr -50m-10Gm-200m -500m PDF

    T100

    Abstract: U6084B U6084B-FP VT100
    Text: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1


    Original     		U6084B T100 U6084B-FP VT100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TS7900 Series 3-Terminal Fixed Negative Voltage Regulator TO-220 ITO-220 Pin Definition: 1. Ground 2. Input tab 3. Output General Description The TS7900 series of fixed output negative voltage regulators are intended as complements to the popular TS7800


    Original     		TS7900 O-220 ITO-220 TS7800 PDF

    2027mA

    Abstract: 4677B
    Text: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1


    Original     		U6084B 4677B 2027mA PDF

    atmel 028

    Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
    Text: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and


    Original     		U6084B 4677C atmel 028 T100 U6084B-MFPG3Y VT100 820k switched potentiometer PDF

    free transistor equivalent book

    Abstract: free all transistor equivalent book transistor r3n
    Text: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F eatures 1) Built-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resistors (see the equivalent c ir­ cuit) . 2) The bias resistors consist of thinfilm resistors with complete isola­


    OCR Scan     		DTB143EK/DTB143EC/DTB143ES TB143E SC-59 free transistor equivalent book free all transistor equivalent book transistor r3n PDF

    HM-65262

    Abstract: No abstract text available
    Text: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris


    Original     		HM-65262/883 MIL-STD883 HM-65262/883 HM-65262 PDF

    HM1-65262

    Abstract: HM-65262
    Text: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil


    Original     		HM-65262/883 MIL-STD883 HM-65262/883 HM1-65262 HM-65262 PDF

    HM-65262

    Abstract: No abstract text available
    Text: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max


    Original     		HM-65262/883 MIL-STD883 70/85ns 125oC HM-65262 PDF

    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


    OCR Scan     		fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S PDF

    transistor F13

    Abstract: 2SC2223 F12 MARKING 100MHZ
    Text: 2SC2223 SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current 20 mA ICM: Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range


    Original     		2SC2223 OT-23-3L 100MHZ, transistor F13 2SC2223 F12 MARKING 100MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current


    Original     		OT-23-3L OT-23-3L 2SC2223 100MHZ, PDF

    transistor SMD f12

    Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.


    Original     		2SC2223 OT-23 600MHz 100MHz transistor SMD f12 f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING PDF

    transistor N14

    Abstract: 22p03 P28 Transistor p18 transistor
    Text: CFB2020A CFB2020A CFB2020A 16x16 2's Complement Multiplier DESCRIPTION: CFB2020A is a 16-by-16 2's complement multiplier which generates a 32-bit product. By using a modified Booth algorithm, this megafunction gives a reasonable speed and gate count. LOGIC SYMBOL:


    OCR Scan     		CFB2020A CFB2020A 16x16 16-by-16 32-bit transistor N14 22p03 P28 Transistor p18 transistor PDF

    ipc-16a

    Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
    Text: user benefits PACE features • Simplified pro­ gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe


    OCR Scan     		IPC-16A/520D 16-bit 10-word 40-pin latches440498, 737-5000/TWX 1371/Telex 77SS32 ipc-16a DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers PDF

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


    Original     		HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC PDF

    TTL TRANSISTOR MODEL PARAMETER

    Abstract: No abstract text available
    Text: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940


    OCR Scan     		CHD01940 15VDCSUPW TTL TRANSISTOR MODEL PARAMETER PDF

    r2c transistor

    Abstract: 20190
    Text: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically


    OCR Scan     		G-200, r2c transistor 20190 PDF

    sxxxx

    Abstract: No abstract text available
    Text: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP


    OCR Scan     		HM1-65262/883 Mtl-Std-883 7CV85nsMax HM-65262/883 MIL-M38510 MIL-STD-1835, GDIP1-T20 L-M38510 sxxxx PDF

    HS1-65647RH

    Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q D1517
    Text: HS-65647RH S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day


    Original     		HS-65647RH 100mA -55oC 125oC 038mm) HS1-65647RH HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q D1517 PDF