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    TRANSISTOR F240 Search Results

    TRANSISTOR F240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    TC 9164 N

    Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D TC 9164 N 95160 85713 CuMoCu F240 08816

    ATC1206

    Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt

    Untitled

    Abstract: No abstract text available
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D

    95160

    Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D 95160 CuMoCu 21864 300G 74382 85713 F240 40014

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    CRF24010F

    Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
    Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324

    FPT-24P-M03

    Abstract: MB3788 MB3788PFV
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27209-3E ASSP SWITCHING REGULATOR CONTROLLER MB3788 • DESCRIPTION The MB3788 is a dual-channel PWM-type switching regulator controller; it incorporates a reference voltage. The MB3788 has a PWM circuit and an output circuit as well as a reference voltage power supply with a voltage


    Original     		PDF DS04-27209-3E MB3788 MB3788 F0309 FPT-24P-M03 MB3788PFV

    missile sensor

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27209-1E ASSP SWITCHING REGULATOR CONTROLLER MB3788 • DESCRIPTION 24-PIN PLASTIC SSOP The MB3788 is a dual-channel PWM-type switching regulator controller; it incorporates a reference voltage. The MB3788 has a PWM circuit and an output circuit as well as a reference


    Original     		PDF DS04-27209-1E MB3788 24-PIN MB3788 F9902 missile sensor

    ic 4060 pin diagram

    Abstract: E100K hamada offset ic 4060 FPT-24P-M03 K100 K500 MB3788
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27209-1E ASSP SWITCHING REGULATOR CONTROLLER MB3788 • DESCRIPTION 24-PIN PLASTIC SSOP The MB3788 is a dual-channel PWM-type switching regulator controller; it incorporates a reference voltage. The MB3788 has a PWM circuit and an output circuit as well as a reference


    Original     		PDF DS04-27209-1E MB3788 24-PIN MB3788 ic 4060 pin diagram E100K hamada offset ic 4060 FPT-24P-M03 K100 K500

    F240 transistor

    Abstract: TTL LS 7400 Transistor F240 LS00 from Motorola 12MRM IC TTL 7400 propagation delay LS TTL family characteristics 7400 TTL ls 7400 LS00
    Text: Circuit Characteristics FAST AND LS TTL 2 CIRCUIT CHARACTERISTICS FAMILY CHARACTERISTICS LS TTL The Low Power Schottky LSTTL family combines a current and power reduction improvement over standard 7400 TTL by a factor of 5. This is accomplished by using Schottky diode clamping to prevent saturation and advanced processing.


    Original     		PDF 54/74S) Mil-Std-883C 12MRM 3831A 3830A F240 transistor TTL LS 7400 Transistor F240 LS00 from Motorola IC TTL 7400 propagation delay LS TTL family characteristics 7400 TTL ls 7400 LS00

    FX2N-128MR

    Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
    Text: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR


    Original     		PDF 2N-16EX 2N-32MR E-08014 D-40880 S-20123 H-1124 CH-8309 FX2N-128MR FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR

    Mitsubishi MELSEC FX2N-80MR

    Abstract: mitsubishi plc FX2n-32mt SERIES FX2N 64mr manual FX2N-128MR Mitsubishi MELSEC FX2N-80MR-DS fx2n-64mr-ds mitsubishi plc MELSEC FX2N 32-MR SERIES FX2N-32MR-ES/UL FX2N-32MR-DS FX2N-4DA
    Text: MELSEC FX SYSTEM DESCRIPTION The FX Family The MELSEC FX Family FX BASICS Description Special features: The MELSEC FX family includes a very comprehensive range of base and expansion modules, enabling you to configure a customised system tailored to your precise requirements.


    Original     		PDF

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


    Original     		PDF D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M

    pm4020

    Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
    Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor a750

    Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
    Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF AF240 TambS45 0004Q7A transistor a750 F240 transistor TIC 122 Transistor Germanium power tic 122

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    MB7100

    Abstract: TAA 310A UD 1208 fujitsu 1988 MB710 100 10L AD
    Text: FUJITSU PROGRAMMABLE SCHOTTKY 65536-B IT READ ONLY MEMORY SCHOTTKY 65,536-BIT DEAP PROM 8192 WORDS X 8 BITS MB7144E/H November 1988 Edition 4.0 The Fujitsu M 87144 Is high speed schottky TTL electrically field program m able read only m em ory organized as 8192 words by 8 bits. With threestate outputs, memory


    OCR Scan     		PDF 65536-B MB7144E/H 536-BIT 24-LEAD F24010S-1C MB7144E/H C28002-SC MB7100 TAA 310A UD 1208 fujitsu 1988 MB710 100 10L AD

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY MB7132E-W MB7132L-W N ovem ber 1987 E d itio n 5.0 SCHOTTKY 8192-BIT DEAP PROM 1024 WORDS x 8 BITS The Fujitsu M B7132-W is high speed S ch o ttky T T L electrically field program ­ mable read o nly m em ory organized as 1024 w ords by 8 bits. W ith three-state


    OCR Scan     		PDF 8192-BIT MB7132E-W MB7132L-W 8192-BIT B7132-W 132-W 28-PAD LCC-28C-A01) 16JTYP I28PCLS)

    24C-C04

    Abstract: MB7138
    Text: FUJITSU PROGRAMMABLE SCHOTTKY 16384-BIT MB7138E-W MB7T38E-SK-WI READ ONLY MEMORY Decem ber 1987 E d itio n 4.0 SCHOTTKY 16384-BIT DEAP PROM {2048 WORDS X 8 BITS The Fujitsu MB7138-W is high speed schottky T T L electrically fie ld program­ mable read o n ly m em ory organized as 2048 words by 8 bits. W ith three-state


    OCR Scan     		PDF 16384-BIT MB7138E-W MB7T38E-SK-WI MB7138-W 28-PAD LCC-28C-A02) 24C-C04 MB7138

    TTL LS 7400

    Abstract: ttl 7400 marking WV1 transistor TTL 7400 national semiconductor 74H Logic Family Specifications IC 7400 nand gate MIL-STD-806B LS TTL family characteristics transistor f259 internal structure 74LS00 nand gate
    Text: Introduction National Semiconductor Introduction FAST, an acronymn for Fairchild Advanced Schottky TTL, is a high-speed, low-power logic family that achieves speeds typically 30% faster than the Schottky family with a corre­ sponding power reduction of approximately 75%. It is fabri­


    OCR Scan     		PDF