2n6027
Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting
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2N6027,
2N6028
2N6027/D
2n6027
PUT 2N6027 pin diagram
PUT 2N6027
2N6027G
equivalent transistor of 2n6027
transistor 2n6027 with circuit diagram
PUT 2N6027/2N6028
2n5270
2N6028
unijunction application note
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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SOT422A
Abstract: BLS3135-65
Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES
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BLS3135-65
OT422A
SOT422A
BLS3135-65
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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transistor 1264-1
Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Text: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.
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BFG90A
OT103
OT103.
transistor 1264-1
bfg90a
transistor npn d 2058
BFG90
transistor J 4081
FP 801
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TPCA8028-H
Abstract: TPCA8028
Text: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 20 nC (typ.)
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TPCA8028-H
TPCA8028-H
TPCA8028
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TPCA*8023
Abstract: TPCA8023-H TPCA 8023 8023-h tpca8023h tpca8023 tpca 8023-h 8023h
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 5.0 nC (typ.)
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TPCA8023-H
TPCA*8023
TPCA8023-H
TPCA 8023
8023-h
tpca8023h
tpca8023
tpca 8023-h
8023h
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TPCA8028-H
Abstract: TPCA8028
Text: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •
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TPCA8028-H
TPCA8028-H
TPCA8028
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TPCA 8023
Abstract: tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
tpca 8023-h
TPCA 8023 h
tpca8023h
TPCA8023-H
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)
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2SA1802
--60mA)
2SC4681
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CZT5401
Abstract: No abstract text available
Text: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.
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CZT5401
OT-223
CZT5401
-10mA
-50mA
-10mA
-50mA
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CZT5551
Abstract: No abstract text available
Text: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.
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CZT5551
OT-223
CZT5551
100MHz
01-Jun-2004
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TPCA 8023
Abstract: TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
TPCA8023-H
TPCA 8023 h
8023h
TPCA*8023
tpca8023
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TPCA 8023
Abstract: tpca 8023-h TPCA8023-H TPCA 8023 h
Text: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package
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TPCA8023-H
TPCA 8023
tpca 8023-h
TPCA8023-H
TPCA 8023 h
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TPCA8020-H
Abstract: toshiba ccfl inverter
Text: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1
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TPCA8020-H
TPCA8020-H
toshiba ccfl inverter
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bfw16a philips
Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Text: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.
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UEA368
BFW16A
711002b
004b0S2
UBB364
bfw16a philips
BFW16A
transistor bfw16a
LB1936
vk200 philips
bfw16a philips semiconductor
ic 1014b
Transistor D 798
transistor bq 17
1014b
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BFY90 PHILIPS
Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the
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BFY90
711002b
004bD4^
MBA383
BFY90 PHILIPS
BFY90
ic 1014b
PHILIPS WIDE BAND AMPLIFIERS
3I15
enamelled copper wire
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TPCA8020-H
Abstract: 020NC
Text: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications 1.27 0.5±0.1
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TPCA8020-H
TPCA8020-H
020NC
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TPCA8020-H
Abstract: No abstract text available
Text: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm 1.27 0.5±0.1 Portable Equipment Applications CCFL Inverter Applications
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TPCA8020-H
TPCA8020-H
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TRANSISTOR P3
Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
Text: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in
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BFG91A
7110fi2b
OT103.
TRANSISTOR P3
4 pin dual-emitter
bs 88 max zs values
FP 801
BFG91A
UBB330
0507 transistor
45194
transistor C 2290
transistor 4393
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TPCA8022-H
Abstract: No abstract text available
Text: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •
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TPCA8022-H
TPCA8022-H
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M803
Abstract: No abstract text available
Text: UMG6N/FMG6A / T ransistors UMG6N FMG6A — =£— Jl> K h ' 7 > v i iX if/D ua l Mini-Mold Transistor I t N P N y 'J u 's h v > v x ^ r Epitaxial Planar NPN Silicon Transistor 'f > /< — $ K 7 < A /In v e rte r Driver • i+ ffi^ tÜ S /D im e n s io n s U n it: mm
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TPCA8021-H
Abstract: 8021-H
Text: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching
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TPCA8021-H
TPCA8021-H
8021-H
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TPCA8022-H
Abstract: No abstract text available
Text: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •
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TPCA8022-H
TPCA8022-H
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