TRANSISTOR H 949 Search Results

TRANSISTOR H 949 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR H 949 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
tl4941 Abstract: tl494 mosfet converter ic tl494 mosfet ic tl494 mosfet TL494 tl494 converter converter ic tl494 transistor tl494 tl494 design buz271 Text: Design Note 32 Issue 1 April 1996 A High Efficiency Constant Current Source for Battery Charging Applications FZT 949 68µH 2A 1k 2N3904 68µH 1N4148 OUTPUT 680R 1/2W 8 11 Vcc=20V +/-4V C1 C2 1000µF 40V 12 47k Comp 3 -ve 2 SB 340 Vcc CT 5 RT 6 1000µF 35V	Original	2N3904 1N4148 TL494 4-17V TL494 FZT949 BUZ271 OT223 FZT789A/FZT949. tl4941 tl494 mosfet converter ic tl494 mosfet ic tl494 mosfet tl494 converter converter ic tl494 transistor tl494 tl494 design	PDF
BFR96S Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764 Text: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	BFR96S 711002b 004S7Ã 11PHIN BFQ32S. BFR96S 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764	PDF
BLX92A Abstract: feedthrough cap Text: P H I L IP S I N T E R N A T I O N A L 41E D S3 711ÜÖSb 0057Ö37 G H P H I N BLX92A M A IN TE N A N C E TYPE r-33~0S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A 711002b 002704b BLX92A feedthrough cap	PDF
LA 7693 Abstract: ic CD 4047 7737 transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain	OCR Scan	2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor	PDF
BLX14 Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull Text: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z	OCR Scan	BLX14 BLX14 philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull	PDF
philips blx14 Abstract: BLX14 Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz	OCR Scan	bbS3T31 BLX14 philips blx14 BLX14	PDF
lc 945 p transistor NPN Abstract: BFR96S Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S	PDF
HA 12058 Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor	PDF
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	HN3C17FU 16GHz	PDF
Untitled Abstract: No abstract text available Text: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors	OCR Scan	DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV 314TK 314TS 314TF 314TL/D 314TA 314TV -71-JfJ 50mA/	PDF
HN3C17FU Abstract: No abstract text available Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	HN3C17FU HN3C17 16GHz HN3C17FU	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF

IR2E27A Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r	OCR Scan	24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28	PDF
2SD2008 Abstract: No abstract text available Text: h 7 > y X í ¡ /Transistors 2 S D 2 2SD2008 1 NPN y U =¡ 7> y7 Epitaxial Planar NPN Silicon Transistor Power Amp. 8 > h $ • ^ jfí'ra jlS I/D im e n s io n s Unit : mm • të ê 1) V C E O = 8 0 V t ^ L ' o 6.510.2 3.41 0.2 2) lc = 1 A £ ± È \ . 'o	OCR Scan	2SD2008 75BVceo 2SD2008	PDF
d634 Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634 Text: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector	OCR Scan	2SD634, 2SD633, 2SD635 d634 d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF
Untitled Abstract: No abstract text available Text: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63	OCR Scan	MA42140 MA42141 MA42142 MA42143 2N5651 2N5662 MIL-STD-750 cycles-65	PDF
SMA-214 Abstract: Tracer 176 Scans-053 high power FET transistor s-parameters Text: 5642214 M/A-COM SEMICONDUCTOR "H/ A- COH SEMICONDUCTOR 93D 0 0 6 4 2 T3 DE\|Sma214 /• T - 3 % a 7 DQOOk« 1 M 5KC MA4F300 Series Galiium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F300 series is a 1 micron recessed gate	OCR Scan	Sma214 MA4F300 SMA-214 Tracer 176 Scans-053 high power FET transistor s-parameters	PDF
702 TRANSISTOR Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE	OCR Scan	NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663	PDF
transistor 1201 1203 1205 Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282 Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).	OCR Scan	AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282	PDF
AN-949B Abstract: No abstract text available Text: APPLICATION NOTE 949B Current Ratings, Safe Operating Area, and High Frequency Switching Performance of Power HEXFETl B y S. C L E M E N T E , B.R. P E LLY , R. R U T T O N S H A Summary This application note discusses the current handling capability, safe op	OCR Scan	AN-949B AN-949B	PDF
Cross Reference power MOSFET Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258	OCR Scan	T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630	PDF

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TRANSISTOR H 949 Search Results

TRANSISTOR H 949 Result Highlights (5)

TRANSISTOR H 949 Datasheets Context Search

GT30F124

GT45F122

tl4941

BFR96S

BLX92A

LA 7693

BLX14

philips blx14

lc 945 p transistor NPN

HA 12058

Untitled

Untitled

HN3C17FU

Motorola transistors MRF 947

IR2E27A

2SD2008

d634

N1702

Untitled

SMA-214

702 TRANSISTOR

transistor 1201 1203 1205

AN-949B

Cross Reference power MOSFET