Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR H03 Search Results

    TRANSISTOR H03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    SC-59

    Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A SC-59 k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522

    k2647

    Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A k2647 SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27

    p 8123 transistor

    Abstract: LM395T LM195 LM34 op amp
    Text: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy


    Original     		PDF LM195/LM395 LM195 AN-110: 1-May-98 5-Aug-2002] p 8123 transistor LM395T LM34 op amp

    electroluminescent display

    Abstract: EL FLAT PANEL opto counter HV577 HV623 HV70
    Text: AN-H03 Application Note Basics of EL Panel Drive Techniques Thin film electroluminescent EL panels operate on the principle of successive pulses of opposite polarity. These pulses must exceed a threshold of approximately 200V for the panel to emit light.


    Original     		PDF AN-H03 electroluminescent display EL FLAT PANEL opto counter HV577 HV623 HV70

    LM395 spice

    Abstract: LM195 RETS195K DS006009 LM395T A-083081-2
    Text: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy


    Original     		PDF LM195/LM395 LM195 LM195K/883 E59628777801YA AN-110: 1-May-98 1-Sep-2000] LM395 spice RETS195K DS006009 LM395T A-083081-2

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    2tph03p

    Abstract: IEC584 IEC584-1 omron ct E54-CT1 PT100 Platinum Resistance Temperature Detector H113
    Text: Modular Temperature Controller E5ZN CSM_E5ZN_DS_E_2_1 New DIN Track Mounting Temperature Controller • Two channels of temperature control available despite width of only 22.5 mm. • The Temperature Controller itself can be replaced without changing terminal wiring.


    Original     		PDF

    IEC584-1

    Abstract: H113 10A250VAC omron P2CF-11 2tph03p Lambda Sensor omron ct E54-CT1 PT100 Platinum Resistance Temperature Detector E53-COV13 F03F
    Text: Modular Temperature Controller E5ZN CSM_E5ZN_DS_E_3_1 New DIN Track Mounting Temperature Controller • Two channels of temperature control available despite width of only 22.5 mm. • The Temperature Controller itself can be replaced without changing terminal wiring.


    Original     		PDF

    LM317HV

    Abstract: LM317HVH LM317HVK LM317HVT LM117HV LM117HVK LM317HVK STEEL RETS117HVK LM317HVK-STEEL LM117HVH
    Text: General Description The LM117HV/LM317HV are adjustable 3-terminal positive voltage regulators capable of supplying in excess of 1.5A over a 1.2V to 57V output range. They are exceptionally easy to use and require only two external resistors to set the output voltage. Further, both line and load regulation are better than standard fixed regulators. Also, the LM117HV is


    Original     		PDF LM117HV/LM317HV LM117HV O-220. O-220 RETS117HVH LM117HVH RETS117HVK LM117HVK LM117HV/LM317HV LM317HV LM317HVH LM317HVK LM317HVT LM317HVK STEEL LM317HVK-STEEL

    LM395

    Abstract: voltage follower schematic A083 LM195 LP395 LM195 National lm395t schematic diagram ac power regulator
    Text: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy


    Original     		PDF LM195/LM395 LM195/LM395 LM195 LM395 voltage follower schematic A083 LP395 LM195 National lm395t schematic diagram ac power regulator

    LM395 datasheet

    Abstract: LM195 National LM195 k02a LM395 LM395T LP395 voltage regulators 10 amp to3 voltage follower schematic R1C shunt regulator
    Text: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy


    Original     		PDF LM195/LM395 LM195/LM395 LM195 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. LM395 datasheet LM195 National k02a LM395 LM395T LP395 voltage regulators 10 amp to3 voltage follower schematic R1C shunt regulator

    LM395T

    Abstract: LM395 datasheet A-083081-2 R1C shunt regulator crowbar k02a LM195 National voltage follower schematic LM195 LM395
    Text: LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power transistors with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy from any


    Original     		PDF LM195/LM395 LM195/LM395 LM195 LM395T LM395 datasheet A-083081-2 R1C shunt regulator crowbar k02a LM195 National voltage follower schematic LM395

    D 1413 transistor

    Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
    Text: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10


    OCR Scan     		PDF SDA01 STA472A) SDC01 STA412A) SDC02 5A100ns 4ki21yp STA434A) IB1044D SDI01 D 1413 transistor transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03

    KTD2058 Y

    Abstract: KTD2058 KTB1366
    Text: SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KTD2058 KTB1366. 220IS 50x50 50x50xlmm KTD2058 Y KTD2058 KTB1366

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    18 PIN DIAGRAM LM3914

    Abstract: digital lm3914 6685a lm35 lm3914 circuits LM3914 applications TMAX T7S LM3914 LM3914 data sheet LM3914 PIN DESCRIPTION lm35 interfacing
    Text: LM34/LM34A/LM34C/LM34CA/LM34D tßN a t i o n a l Semiconductor LM34/LM34A/LM34C/LM34CA/LM34D Precision Fahrenheit Temperature Sensors G eneral Description while the LM34C, LM34CA and LM34D are also available in the plastic TO-92 transistor package. The LM34D is also


    OCR Scan     		PDF LM34/LM34A/LM34C/LM34CA/LM34D TL/H/66S5-16 TL/H/6685-17 TL/H/66B5-18 TL/H/6685-19 bSD112M 18 PIN DIAGRAM LM3914 digital lm3914 6685a lm35 lm3914 circuits LM3914 applications TMAX T7S LM3914 LM3914 data sheet LM3914 PIN DESCRIPTION lm35 interfacing

    2216

    Abstract: 2SC2216 2SC2717
    Text: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, SC-43 2216 2SC2717

    2SK389

    Abstract: 052-DB 2SJ109
    Text: TO SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| =20m S Typ.


    OCR Scan     		PDF 2SK389 2SJ109 052-DB

    transistor 1127

    Abstract: transistor 2sk2961
    Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)


    OCR Scan     		PDF 2SK2961 100//A 75MAX. 20kil) 100/is^ transistor 1127 transistor 2sk2961

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    Untitled

    Abstract: No abstract text available
    Text: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' *f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t * r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*


    OCR Scan     		PDF 200Utyp

    LM395K

    Abstract: LM395H LM395T LM295 LM196 LM395P 2N2905 LM195 LM295H LM295K
    Text: LM195/LM295/LM395 Ultra Reliable Power Transistors General Description The LM195/LM295/LM395 are fast, monolithic power tran­ sistors with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal overload protection making them virtually impossible to destroy


    OCR Scan     		PDF LM195/LM295/LM395 LM195 TL/H/6009-27 TL/H/6009-28 1N914* LM19S TL/H/6009-30 TL/H/6009-29 TL/H/6009-31 LM395K LM395H LM395T LM295 LM196 LM395P 2N2905 LM295H LM295K