TRANSISTOR H21E Search Results

TRANSISTOR H21E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR H21E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUX45 Abstract: transistor et 460 Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection	OCR Scan	CB-19 BUX45 transistor et 460	PDF
BUX20 Abstract: bux 716 transistor BUX Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection	OCR Scan	BUX20 CB-159 BUX20 bux 716 transistor BUX	PDF
BF180 Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti	OCR Scan	BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
Transistor B C 458 Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458 Text: BF 457 BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature	OCR Scan	BF459sont Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458	PDF
transistor 152 M Abstract: No abstract text available Text: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages	OCR Scan	2IM1986 transistor 152 M	PDF
transistor ESM 30 Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950 Text: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os cillator stage in T V VH F tuners.	OCR Scan	CB-76 100MA -C12e transistor ESM 30 transistor ESM transistor h21e 752 transistor IC 282 ft950	PDF
ESM379 Abstract: esm diodes Text: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal	OCR Scan	CB-146 ESM379 esm diodes	PDF
BSY79 Abstract: transistor 746 nixie tubes h21E1 ti c11b Text: BSY 79 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , P LAN A R E P IT A X IA L Low current switching Commutation faible courant "Nixie" driver 120 V v CEO Commande des tubes "N ix ie ” 1 mA 30 h21E <1 v min V CEsat 0,3 V to 0,2 mA	OCR Scan	BSY79 BSY79 transistor 746 nixie tubes h21E1 ti c11b	PDF
transistor BUX Abstract: BUX10 bux THOMSON 4682 bux 10 Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A	OCR Scan	CB-19 transistor BUX BUX10 bux THOMSON 4682 bux 10	PDF
BCW91 Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C Text: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case	OCR Scan	BCW90A, BCW91 BCW90 CB-76 bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C	PDF
BUX12 Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf Text: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension	OCR Scan	BUX12 CB-19 BUX12 sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf	PDF
2N3440 Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J Text: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications	OCR Scan	2n3439 2N3440 j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J	PDF
H1P transistor Abstract: transistor BUX 48 BUX43 BUX 43 Text: *B U X 4 3 NPN SILICON TRANSISTOR. TRIPLE DIFFUSED MESA TR A N S IS TO R S IL IC IU M NP N , M ESA T R IP L E D IF F U S E îfîPreferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant	OCR Scan	BUX43 CB-19 H1P transistor transistor BUX 48 BUX43 BUX 43	PDF

transistor ESM 30 Abstract: ESM269 Text: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo dulation distorsion V CBO	OCR Scan		PDF
BUX15 Abstract: TRANSISTOR BUX 37 transistor BUX Text: *BUX15 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension	OCR Scan	BUX15 CB-19 BUX15 TRANSISTOR BUX 37 transistor BUX	PDF
2N 326 Transistor Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor	PDF
transistor 6032 Abstract: 2N6033 sss 1120 2n6032 60322n transistor 6032 mh Text: 2N 6032 2N 6033 NPN SILICON TRANSISTORS,EPITAXIAL COLLECTOR TRANSISTORS SILICIUM,NPN' COLLECTEUR EPITAXIE - High current, high speed, high power transistor Transistor rapide fort courant, forte puissance - Fast switching and am plifier applications Transistors de commutation et d'amplification rapide	OCR Scan	CB-19 transistor 6032 2N6033 sss 1120 2n6032 60322n transistor 6032 mh	PDF
transistor BU 184 Abstract: TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP O-22CIAB CB-117 BUV37 CB-244 CB-285 transistor BU 184 TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V	PDF
bd130 Abstract: TRANSISTOR BD130 Comset Comset Semiconductors Text: BD130 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	BD130 BD130 TRANSISTOR BD130 Comset Comset Semiconductors	PDF
darlington NPN 1000V 8a transistor Abstract: NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP CB-244 CB-285 darlington NPN 1000V 8a transistor NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90	PDF
H12E Abstract: MARKING 3Ms SOT363 Text: BCM856S PNP Silicon AF Transistor Array • Precision matched transistor pair: ∆IC ≤ 10% 4 5 6 • For current mirror applications 1 • Low collector-emitter saturation voltage 2 3 • Two galvanic internal isolated Transistors • Complementary type: BCM846S	Original	BCM856S BCM846S BC856S: EHA07175 OT363 H12E MARKING 3Ms SOT363	PDF
bd130 Abstract: TRANSISTOR BD130 Text: BD130 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	BD130 BD130 TRANSISTOR BD130	PDF
BCM856S Abstract: BCM846S BCR108S Text: BCM846S NPN Silicon AF Transistor Array • Precision matched transistor pair: ∆IC ≤ 10% • For current mirror applications 4 5 6 1 • Low collector-emitter saturation voltage 2 3 • Two galvanic internal isolated Transistors • Complementary type: BCM856S	Original	BCM846S BCM856S BCM846S: EHA07178 OT363 BCM856S BCM846S BCR108S	PDF

TRANSISTOR H21E Search Results

TRANSISTOR H21E Result Highlights (5)

TRANSISTOR H21E Datasheets Context Search

BUX45

BUX20

BF180

2sb504

Transistor B C 458

transistor 152 M

transistor ESM 30

ESM379

BSY79

transistor BUX

BCW91

BUX12

2N3440

H1P transistor

transistor ESM 30

BUX15

2N 326 Transistor

transistor 6032

transistor BU 184

bd130

darlington NPN 1000V 8a transistor

H12E

bd130

BCM856S