Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
RN2909FS
RN2908FS
RN1907FS
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
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RN1907FS
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Siemens 1736
Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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0235bG5
Q004312
BCY66
Q60203-Y66
TcaseS45Â
fi23Sb05
Q0QM31?
120Hz
Siemens 1736
2sc 1740 TRANSISTOR equivalent
QS 100 NPN Transistor
101S
BCY66
Q60203-Y66
10-lmA
Scans-00145246
Q004312
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ht4 marking
Abstract: TRANSISTOR MARKING TE SOT363
Text: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor
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MAM380
SCA64
5002/00/03/pp8
ht4 marking
TRANSISTOR MARKING TE SOT363
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LDTC115TET1G
Abstract: transistor h6 marking H6 SC-89 H6100
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC115TET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC115TET1G
SC-89
100MHz
463C-01
463C-02.
LDTC115TET1G
transistor h6
marking H6
SC-89
H6100
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Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 R2 2 5 3 4 +0.02
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RN1907FS
RN1909FS
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more
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RN2907FS
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RN1907FS
RN1909FS
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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EM7164SU16
Abstract: No abstract text available
Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision
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EM7164SU16
1Mx16
690-7t
100ns
120ns
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2907FS
RN2909FS
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RN2908FS
RN1907FS
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RN2909FS
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS marking h8
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2907FS
RN2909FS
RN2908FS
RN2907FS
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RN1907FS
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RN2909FS
marking h8
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sot 23 marking code 2t
Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is
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OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT-A43
sot 23 marking code 2t
marking DG sot-23 NPN transistor
sot-23 MARKING CODE G1
MARKING NT SOT23
sot-23 l6
marking of m7 diodes
sot-23 marking LC
transistor ad 1v
m6 marking transistor sot-23
C5 MARKING TRANSISTOR
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MARKING CODE ht9
Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2
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SCA64
15002/00/01/pp8
MARKING CODE ht9
MARKING ht9 sot363
h9 marking
OT363
SOT363 marking code H9
transistor h9
MARKING HT9
SC88 SOT363 plastic package Ht9 MARKING CODE
hT9 marking
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60w af applications Sanyo
Abstract: No abstract text available
Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.
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ENN6960
2SB1683
2SD2639
2SB1683
2010C
60w af applications Sanyo
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53c
Oai45b3
BUZ50B
Q0145b7
T-39-11
bbS3T31
00145bfl
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ALY TRANSISTOR
Abstract: transistor ALY 8 transistor ALY
Text: POSITIVE THERMISTORS "Posi-R" • nichicon For Overcurrent Protection Characteristic of ZPC4MCE100D When som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor
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ZPC4MCE100D
ALY TRANSISTOR
transistor ALY 8
transistor ALY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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transistor BC 339
Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
transistor BC 339
TRANSISTOR BC 629
339 marking code transistor
PG-SOT363-6-1
MA000849564
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SB775
Abstract: 2SD895
Text: O rdering num ber: EN 679F 2SB775/2SD895 N0.679F 2SB775: PN P E pitaxial P lanar Silicon Transistor 2SD 895: NPN Triple Diffused P lan ar Silicon Transistor 85V/6A, AF 35W Output Applications F e a tu re s •Wide ASO because of on-chip ballast resistance.
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2SB775/2SD895
2SB775:
2SD895:
2SB775
2SB775
2SD895
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TT7100
Abstract: IR2416
Text: 7-U nit 150mA Transistor Array IR2416 • IR2416 7-Unit 150mA Transistor Array Pin Connections Description T he IR2416 is a 7-circuit driver. T he internal clamping diodes enable the IC to drive the inductive load directly. IN, H ■ IN2 Features in 3 1. Low output saturation voltage
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150mA
IR2416
IR2416
16-pin
130mA
TT7100
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BUZ356
Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUZ356
T0218AA;
0D14flEb
T-39-13
tbS3T31
bb53c
BUZ356
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