TRANSISTOR H8050 Search Results

TRANSISTOR H8050 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR H8050 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
H8050 Abstract: H8050 equivalent Text: H8050 Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃	Original	H8050 E00mA 800mA 800mA, 800mA 100AIE 100AIC H8050 H8050 equivalent	PDF
H8050 Abstract: transistor ss8050 SS8050 ss8050 TRANSISTOR transistor TO-92 SS8050 Transistor h8050 h8050 transistor Transistor 25V 1.5A, 1W H8050 equivalent NPN Transistor TO92 25v Text: NPN 汕头华汕电子器件有限公司 SILICON H8050 █ 主要用途 TRANSISTOR 对应国外型号 SS8050 █ 外形图及引脚排列作便携式收音机 B 类推挽输出 2W 放大。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃	Original	H8050 SS8050 100mA 800mA 800mA, 800mA 100AIE 100AIC H8050 transistor ss8050 SS8050 ss8050 TRANSISTOR transistor TO-92 SS8050 Transistor h8050 h8050 transistor Transistor 25V 1.5A, 1W H8050 equivalent NPN Transistor TO92 25v	PDF
TRANSISTOR 8050 Abstract: H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：C060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2	Original	100mm C060AJ-00 S8050H8050 35VIE 100mA 800mA 800mAIB 10VIC TRANSISTOR 8050 H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v	PDF
8050L Abstract: S8050 transistor NPN TO-92 Vebo6v s8050h Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050L 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：C065BJ-00 芯片厚度：240±20µm 管芯尺寸：650x650µm 2 焊位尺寸：B 极 105×105µm 2；E 极 105×105µm 2	Original	8050L 100mm C065BJ-00 S8050H8050L 35VIE 100mA 800mA 800mAIB 10VIC 8050L S8050 transistor NPN TO-92 Vebo6v s8050h	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj	PDF
LDTA143YLT1G Abstract: L8050QLT1G copper wire L8050HQLT1G L8550QLT1G L9012RLT1G list of transistor LDTC144EKALT1G LDTC114WLT1G LDTA143XLT1G Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 100401 PCN Issue Date: 25th Apr' 2010 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales	Original	LDTC114YLT1G LDTC115ELT1G LDTC115GLT1G LDTC115TLT1G LDTC123ELT1G LDTC123JLT1G LDTC123TLT1G LDTC123YLT1G LDTC124ELT1G LDTC124GLT1G LDTA143YLT1G L8050QLT1G copper wire L8050HQLT1G L8550QLT1G L9012RLT1G list of transistor LDTC144EKALT1G LDTC114WLT1G LDTA143XLT1G	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF