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    TRANSISTOR HIGH VOLTAGE Search Results

    TRANSISTOR HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with


    Original     		PDF APT13005 O-220-3, O220-3 O-220F-3 APT13005 O-220F-3 O-220-3 O-220-3

    BULD39D

    Abstract: BULD39D-1 BULD39DT4 JESD97
    Text: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power


    Original     		PDF BULD39D-1 BULD39DT4 O-252) O-251) O-251 O-252 2002/93/EC BULD39D BULD39D-1 BULD39DT4 JESD97

    BUH315D

    Abstract: No abstract text available
    Text: BUH315D  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. 3 APPLICATIONS


    Original     		PDF BUH315D ISOWATT218 E81734 ISOWATT218 BUH315D

    PHP2N40E

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    Original     		PDF O220AB PHP2N40E PHP2N40E

    st 393

    Abstract: BUL705 JESD97
    Text: BUL705 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C


    Original     		PDF BUL705 2002/93/EC O-220 st 393 BUL705 JESD97

    marking C3Z

    Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
    Text: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z


    Original     		PDF CMPTA44 OT-23 100mA 10MHz 26-September marking C3Z marking C3Z SOT23 CMPTA44 npn 400V sot-23

    TRANSISTOR MARKING CODE TP

    Abstract: Vbe 40 transistor CJD13003 npn switching transistor Ic 100mA
    Text: CJD13003 NPN SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications.


    Original     		PDF CJD13003 26-August 200mA TRANSISTOR MARKING CODE TP Vbe 40 transistor CJD13003 npn switching transistor Ic 100mA

    BU2522AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


    Original     		PDF BU2522AF BU2522AF

    Untitled

    Abstract: No abstract text available
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab

    SO642

    Abstract: SO692
    Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3


    Original     		PDF SO642 SO692 OT-23 SO642 SO692

    AT-30533-TR1

    Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


    Original     		PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK

    Untitled

    Abstract: No abstract text available
    Text: BUD7312 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature


    Original     		PDF BUD7312 BUD7312 D-74025

    2n7000 equivalent

    Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
    Text: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		PDF 2N7000 MIL-STD-202G, 2N7000 2n7000 equivalent transistor 2n7000 field effect transistor N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000

    QCA150BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA150BA60 E76102 QCA150BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Text: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


    Original     		PDF QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


    Original     		PDF MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1

    BU4507AX

    Abstract: BU4507AF BU4507AX equivalent
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


    Original     		PDF BU4507AX BU4507AX BU4507AF BU4507AX equivalent

    BU1507AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


    Original     		PDF BU1507AX BU1507AX

    QCA50AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QCA50AA100 E76102 QCA50AA100 VCEX1000V IC50A, 30max. AMP110TAB IB11A VCC600V

    Untitled

    Abstract: No abstract text available
    Text: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters


    Original     		PDF 2SC4538R

    2sc3320

    Abstract: 2sc3320 equivalent 2sc3320 transistor
    Text: 2SC3320 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters


    Original     		PDF 2SC3320 SC-65 2sc3320 2sc3320 equivalent 2sc3320 transistor

    SMD TRANSISTOR MARKING w7

    Abstract: No abstract text available
    Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9115T O-236AB) PBHV8115T. AEC-Q101 PBHV9115T 771-PBHV9115T215 SMD TRANSISTOR MARKING w7

    mpsa92

    Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
    Text: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance


    OCR Scan     		PDF MPSA92, -300V MPSA92) MPSA93) MPSA43 MPSA92 MPSA93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR