2N3055 power amplifier circuit
Abstract: 2N3055 isc 2n3055 transistor transistor 2N3055 Power Transistor 2N3055 2N3055 specification 2N3055 transistor equivalent 2N3055 NPN Transistor 2N3055 transistor 2N3055 power circuit
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955
|
Original
|
2N3055
MJ2955
2N3055 power amplifier circuit
2N3055
isc 2n3055 transistor
transistor 2N3055
Power Transistor 2N3055
2N3055 specification
2N3055 transistor equivalent
2N3055 NPN Transistor
2N3055 transistor
2N3055 power circuit
|
PDF
|
2N3055A
Abstract: Vce(sat) MJ2955A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A
|
Original
|
2N3055A
MJ2955A
2N3055A
Vce(sat)
MJ2955A
|
PDF
|
darlington power transistor
Abstract: POWER TRANSISTOR TIP131 TIP131 TIP136 80V 1A NPN darlington
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 4A
|
Original
|
TIP136
darlington power transistor
POWER TRANSISTOR TIP131
TIP131
TIP136
80V 1A NPN darlington
|
PDF
|
b 0409
Abstract: TS13005CZ ITO-220 TS13005 TS13005CI TS13005CP ic 4440 TS13005C 4 PIN TO 220 IC
Text: TS13005 High Voltage NPN Transistor ITO-220 BVCEO = 400V BVCBO = 700V Ic = 4A VCE SAT , = 1V @ Ic / Ib = 4A / 1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information High voltage. Part No. High speed switching Packing TS13005CZ Structure
|
Original
|
TS13005
ITO-220
TS13005CZ
O-220
TS13005CI
TS13005CP
O-252
Power570
ITO-220
b 0409
TS13005CZ
TS13005
TS13005CI
TS13005CP
ic 4440
TS13005C
4 PIN TO 220 IC
|
PDF
|
TSC5304D
Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Text: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
|
Original
|
TSC5304D
TSC5304DCH
O-251
TSC5304DCP
O-252
oth022
O-251
TS5304D
TSC5304D
power transistor Ic 4A NPN to - 251
TSC5304DCH
TSC5304DCP
TS530
NPN Transistor 10A 400V
TSC5304
ic 565 pin diagram
|
PDF
|
2N3055H
Abstract: Vce(sat) transistor Ic 4A NPN transistor 2N3055H
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055H DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier
|
Original
|
2N3055H
2N3055H
Vce(sat)
transistor Ic 4A NPN
transistor 2N3055H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
|
Original
|
TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
|
PDF
|
marking c08
Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
|
Original
|
TSC5304D
O-251
O-252
marking c08
C08 marking
250V transistor npn 2a
BM 0228
marking code C5
power transistor Ic 4A NPN to - 251
1A MARKING CODE
C5 MARKING TRANSISTOR
marking code B2
NPN Silicon Power Transistor DPAK
|
PDF
|
NPN Transistor 1A 400V
Abstract: transistor 926 npn transistors 400V 1A transistor j 127 ITO-220 TS13005 TS13005CI TS13005CZ transistor marking 2a transistor ts13005
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
NPN Transistor 1A 400V
transistor 926
npn transistors 400V 1A
transistor j 127
ITO-220
TS13005
transistor marking 2a
transistor ts13005
|
PDF
|
TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
|
Original
|
TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC=4A, IB=1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
|
PDF
|
TP 1078
Abstract: transistor 926
Text: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
|
Original
|
TSC128D
O-220
O-263
TSC128DCZ
TSC128DCM
O-263
50pcs
800pcs
TP 1078
transistor 926
|
PDF
|
transistor Ic 1A datasheet
Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857
|
Original
|
2SD1133
2SB857
transistor Ic 1A datasheet
transistor Ic 1A datasheet NPN
2SB857
2SD1133
|
PDF
|
2sc2233
Abstract: No abstract text available
Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SC2233 4A 40W Technical Data …designed for use in B/W TV horizontal deflection output. F Collector-Base Voltage: VCBO=200V F DC Current Gain: 20 @ IC=4A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage
|
Original
|
2SC2233
O-220
Characteris70
2sc2233
|
PDF
|
|
|
n50d
Abstract: ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462
Text: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
ZXT13N50DE6
OT23-6
OT23-6
n50d
ZXT13N50DE6
ZXT13N50DE6TA
ZXT13N50DE6TC
DSA0037462
|
PDF
|
NPN SOT23-6
Abstract: ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC DSA0037431 CM13A
Text: ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
|
Original
|
ZXT10N15DE6
OT23-6
OT23-6
NPN SOT23-6
ZXT10N15DE6
ZXT10N15DE6TA
ZXT10N15DE6TC
DSA0037431
CM13A
|
PDF
|
IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A
|
Original
|
ZXTC6719MC
100mV
-220mV
DS31928
IC 630
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A
|
Original
|
ZXTC6719MC
100mV
-220mV
DS31928
|
PDF
|
mje803
Abstract: MJE703 transistor 2A 3v
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Breakdown Voltage— : V BR CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE703
|
Original
|
MJE703
-40mA
mje803
MJE703
transistor 2A 3v
|
PDF
|
KTC5001D
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE sat =0.13V(Typ.) at (IC=4A, IB=0.05A) A I C Large Collector Current J D : IC=10A(dc) IC=15A(10ms, single pulse) K O Low Frequency Power Amplifier.
|
Original
|
KTC5001D/L
KTA1834D/L.
KTC5001D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE sat =0.13V(Typ.) at (IC=4A, IB=0.05A) A I C Large Collector Current J D : IC=10A(dc) IC=15A(10ms, single pulse) O E K Q APPLICATION M B
|
Original
|
KTC5001D/L
KTA1834D/L.
|
PDF
|
marking 1d4
Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF
Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications
|
Original
|
ZXTN07045EFF
OT23F,
ZXTP07040DFF
OT23F
OT23F
D-81541
marking 1d4
TS16949
ZXTN07045EFF
ZXTN07045EFFTA
ZXTP07040DFF
|
PDF
|
TS16949
Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications
|
Original
|
ZXTN07045EFF
OT23F,
ZXTP07040DFF
OT23F
OT23F
D-81541
TS16949
ZXTN07045EFF
ZXTN07045EFFTA
ZXTP07040DFF
marking 1d4
|
PDF
|
ZETEX GATE DRIVER
Abstract: MARKING 1D4
Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications
|
Original
|
ZXTN07045EFF
OT23F,
ZXTP07040DFF
OT23F
and49)
621-ZXTN07045EFFTA
ZXTN07045EFFTA
ZETEX GATE DRIVER
MARKING 1D4
|
PDF
|
