Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.
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53T31
RZ1214B125Y
14B125
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BLV95
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile
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BLV95
OT-171)
BLV95
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bly89a
Abstract: Transistor bly89a
Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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Q01414fl
BLY89A
7Z675I
bly89a
Transistor bly89a
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Untitled
Abstract: No abstract text available
Text: H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F Speech Network IC for Telephone Sets The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. it is possible to send DTMF signal or backtone
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HA16821
HA16821MP
MP-18
HA16821F
FP-20DN
HA16821P/HA16821MP/HA16821F
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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transistor IC BT 136
Abstract: AGC1213 6822F ha16821
Text: H A 1 6 8 2 1 P / H A 1 6 8 2 1 M P / H A 1 6 8 2 1 F - • * .« " * » * Speech Network IC for Telephone Sets Description HA16821P The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. It is possible to send DTM F signal or backtone
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HA16821
HA16821P
transm/HA16821MP/H
16821F
HA16821F)
HA16821P/HA16821MP/HA16821F
transistor IC BT 136
AGC1213
6822F
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Untitled
Abstract: No abstract text available
Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA
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b53T31
BLT80
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Untitled
Abstract: No abstract text available
Text: H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F -pe-nary Speech Network IC fo r Telephone Sets D e s c rip tio n HA16821P The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. it is possible to send DTMF signal or backtone
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HA16821P
HA16821
HA16821F)
HA16821P/HA16821MP/HA16821F
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NPN PNP SOT-143
Abstract: BCV63 BCV64 TI3030 700 v power transistor
Text: DEVELOPMENT DATA bt>53ci31 GDlSbO? 3 [ T h is data sheet contains advance inform ation and BCV63 specifications are subject to change w ith out notice. N AUER PHILIPS/DISCRETE ObE » r - 2 * ? - 0 ,7 SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.
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BCV63
OT-143
BCV64.
OT-143.
NPN PNP SOT-143
BCV63
BCV64
TI3030
700 v power transistor
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Untitled
Abstract: No abstract text available
Text: SftOPTEK Product Bulletin JA N TX, JA N TX V , 2N5796U Septem ber 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U • • • Ceramic surface mount package Hermetically sealed Miniature package minimizes circuit board area required • Electrical performance similar to dual
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2N5796U
2N2907A
MIL-PRF-19500/496
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Untitled
Abstract: No abstract text available
Text: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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bbS3T31
RV2833B5X
53T31
0D1S17D
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BC868
Abstract: transistor marking HB sot-89 BC868-10 BC868-16 BC868-25 IEC134 L7E transistor T10102
Text: • bbSB'ìBl DD24MÖ7 Ö21 « A P X N AMER PHILIPS/ DIS CRETE b7E ì> BC868 A_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output
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bbS3131
D0S44fi7
BC868
BC868/BC869
500mA;
OT-89
BC868
transistor marking HB sot-89
BC868-10
BC868-16
BC868-25
IEC134
L7E transistor
T10102
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E » APX bt.53^31 □ □ 5615 0 b5b A Z IN 4 U 3 C PNP POWER TRANSISTOR PNP power transistor, housed in a TO-39 metal envelope. It is intended for use in amplifier and switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE QbE D tbS3T31 0015015 0 • DEVELOPMENT DATA LVE21050R This data sheet contains advance information and specifications are subject to change without notice. J V T -3 3 -0 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor for use in common-emitter class-A linear power amplifier up to 4,2 GHz.
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tbS3T31
LVE21050R
FO-83)
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK856-800A
T0220AB
56-800A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002A730
BFS23A
175MHz
00Bfl73t>
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TRANSISTOR BF495
Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
Text: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor
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BF495
DD15313
7Z07390
31-iy
D01S31S
7Z62763
7Z08226
TRANSISTOR BF495
BF495 transistor
BF495
BF495C
N10Y
BF495D
transistor TI 310
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bhS3T31 QD2fllDfl 311 P h ilip s S e m ic o n d u c to rs 2N2894A D a ta sheet statu s Preliminary specification d a te o f issue December 1990 Silicon switching transistor QUICK REFERENCE DATA PARAMETER SYMBOL MIN. CONDITIONS
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bhS3T31
2N2894A
bb53131
7Z26553
bbS3T31
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Untitled
Abstract: No abstract text available
Text: • L.bSB'm O O B S ^ B 73R « A P X N ANER PHILIPS/DISCRETE PXT3904 b7E D yv SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a SO T-89 envelope primarily intended for high-speed, saturated switching applications for industrial service. Q U IC K R E F E R E N C E D A T A
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PXT3904
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lem HA
Abstract: transistor bu2520d BU2520D
Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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002037b
BU2520D
lem HA
transistor bu2520d
BU2520D
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Transistor Equivalent list
Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT439A
LXE16350X
RA439
Transistor Equivalent list
Transistor AND DIODE Equivalent list
capacitor feed-through
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D bb53^31 DDE7ba^ 136 • APX BF421 BF423 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in colour television and professional monitor equipment. N-P-N complements are BF420 and BF422.
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BF421
BF423
BF420
BF422.
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HIR26-21C
Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight
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CT1003Q43-V2
HIR26-21C
w32 smd transistor
w32 smd transistor 143
17-21SYGC/S530-E2/TR8
3A-01-B74-Y9C-A1S1T1DH-AM
ELM-1882-UYWB
19-223SURSYGC/S530-A3/E3/TR8
l289
itr8102
w27 smd transistor
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BFQ32
Abstract: for transistor bfr96 MB8347 philips bfq32 BFR96 philips transistor bfr96 BFR96 UBB345
Text: Philips Semiconductors ^33^31 G031S31 'HS IA P X Product specification PNP 4 GHz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b^E D PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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G031S31
BFQ32
BFR96.
BFQ32/02
UBBS47
BFQ32
for transistor bfr96
MB8347
philips bfq32
BFR96 philips
transistor bfr96
BFR96
UBB345
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PDF
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