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    TRANSISTOR J37 Search Results

    TRANSISTOR J37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J37 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH1214-2M

    Abstract: .15 j63 1.5 j63 1035 transistor
    Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor

    J37 transistor

    Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
    Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors


    Original     		PDF Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145

    diode marking j35

    Abstract: 2SK1109 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package


    Original     		PDF 2SK1109 2SK1109 SC-59 diode marking j35 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31

    transistor c36

    Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
    Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PDF PH3134-11s MJLLIMET1344) transistor c36 wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134

    F1 J37

    Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm


    Original     		PDF NEL200101-24 NEL2001012-24 F1 J37 class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035

    Transistor AC 51 0865 75 730

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE 25Pmx1500Pm FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 85GHz DS130523 Transistor AC 51 0865 75 730

    FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263

    motorola MRF559

    Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor
    Text: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts


    Original     		PDF MRF559/D MRF559 motorola MRF559 mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh

    FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263

    j378

    Abstract: 2sj378
    Text: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ378 j378 2sj378

    j378

    Abstract: 2SJ378
    Text: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ378 j378 2SJ378

    Untitled

    Abstract: No abstract text available
    Text: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ378

    j378

    Abstract: 2SJ378
    Text: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ378 25ments, j378 2SJ378

    J377

    Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ377 J377 2SJ377 j377 datasheet silicon power J377 transistor j377

    PH3134-10M

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
    Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH3134-10M PH3134-10M RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145

    7111

    Abstract: MS2202
    Text: MS2202 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025 - 1150 MHz 35 VOLTS INPUT MATCHING POUT = 2.0 WATTS GP = 9.0 dB MINIMUM LOW THERMAL RESISTANCE COMMON BASE CONFIGURATION DESCRIPTION: The MS2202 is a low power Class C NPN transistor specifically


    Original     		PDF MS2202 MS2202 7111

    Untitled

    Abstract: No abstract text available
    Text: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH3134-9L

    pseudomorphic HEMT

    Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250

    Untitled

    Abstract: No abstract text available
    Text: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH3134-11S

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931