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    TRANSISTOR J3Y Search Results

    TRANSISTOR J3Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J3Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j3y transistor

    Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
    Text: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    PDF S8050 OT-23 OT-23 S8550 500mA 30MHz j3y transistor .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y

    j3y transistor

    Abstract: .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050

    j3y transistor

    Abstract: SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=1.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050

    SOT-23 J3Y

    Abstract: j3y transistor transistor j3y
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 S8050 OT-23 S8550 500mA 30MHz SOT-23 J3Y j3y transistor transistor j3y

    j3y transistor

    Abstract: SOT-23 J3Y S8050
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor SOT-23 J3Y S8050

    SOT-23 J3Y

    Abstract: j3y transistor BR S8050 transistor S8050 sot-23 Marking J3Y transistor J3Y s8050 S8050 j3y S8050 equivalent Transistor S8050 j3y
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES S8050 Pb z High Collector Current. IC= 500mA) z Complementary To S8550. z Excellent HFE Linearity. z High total power dissipation.(PC=300mW Lead-free APPLICATIONS


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    PDF S8050 500mA S8550. 300mW) OT-23 BL/SSSTC079 SOT-23 J3Y j3y transistor BR S8050 transistor S8050 sot-23 Marking J3Y transistor J3Y s8050 S8050 j3y S8050 equivalent Transistor S8050 j3y

    j3y transistor

    Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
    Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR( NPN ) SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W(Tamb=25℃) 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS(


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    PDF S8050LT1 OT--23 500mA 100mA 30MHz S8050LT1 j3y transistor transistor j3y MARKING J3Y SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y

    j3y transistor

    Abstract: J3Y marking transistor J3Y TRANSISTOR SMD j3y
    Text: Transistors Transistor T SMD Type Product specification KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF KST8050S OT-23 j3y transistor J3Y marking transistor J3Y TRANSISTOR SMD j3y

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8050LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR Parameter Symbol Test 0.95 0.4 0.95 1.9 2.4 1.3 2.9


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    PDF OT-23 S8050LT1 500mA 30MHz S8050LT1

    j3y transistor

    Abstract: J3Y marking code SOT-23 J3Y sot-23 Marking J3Y j3y transistor parameters transistor J3Y MMS8050 .j3y .j3y transistor J3Y diode
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


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    PDF MMS8050 OT-23 -55OC OT-23 20mAdc, 30MHz) j3y transistor J3Y marking code SOT-23 J3Y sot-23 Marking J3Y j3y transistor parameters transistor J3Y MMS8050 .j3y .j3y transistor J3Y diode

    j3y transistor

    Abstract: SOT-23 J3Y j3y transistor PNP transistor J3Y .j3y .j3y transistor SOT-23 J3Y pnp J3Y marking code MMS9012 sot-23 Marking J3Y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9012 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


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    PDF MMS9012 OT-23 -55OC OT-23 20mAdc, 30MHz) j3y transistor SOT-23 J3Y j3y transistor PNP transistor J3Y .j3y .j3y transistor SOT-23 J3Y pnp J3Y marking code MMS9012 sot-23 Marking J3Y

    j3y transistor

    Abstract: SOT-23 J3Y SOT-23 J3Y npn .j3y sot-23 Marking J3Y J3Y marking code .j3y transistor MARKING J3Y J3Y marking J3Y Transistor MARKING
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


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    PDF MMS8050 OT-23 -55OC OT-23 100uAdc, 40Vdc, 20Vdc, j3y transistor SOT-23 J3Y SOT-23 J3Y npn .j3y sot-23 Marking J3Y J3Y marking code .j3y transistor MARKING J3Y J3Y marking J3Y Transistor MARKING

    j3y transistor PNP

    Abstract: SOT-23 J3Y pnp j3y transistor
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9012 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


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    PDF MMS9012 OT-23 -55OC OT-23 100uAdc, 20mAdc, 30MHz) j3y transistor PNP SOT-23 J3Y pnp j3y transistor

    j3y transistor

    Abstract: J3Y marking code j3y transistor parameters SOT-23 J3Y MMS8050 .j3y transistor j3y sot-23 Marking J3Y J3Y diode marking J3Y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


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    PDF MMS8050 OT-23 -55OC OT-23 20mAdc, 30MHz) j3y transistor J3Y marking code j3y transistor parameters SOT-23 J3Y MMS8050 .j3y transistor j3y sot-23 Marking J3Y J3Y diode marking J3Y

    j3y transistor

    Abstract: SOT-23 J3Y J3Y marking code .j3y transistor marking j3y .j3y transistor J3Y MMS8050 J3Y Transistor MARKING Transistor hFE CLASSIFICATION Marking CE
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS8050 OT-23 -55OC OT-23 100uAdc, j3y transistor SOT-23 J3Y J3Y marking code .j3y transistor marking j3y .j3y transistor J3Y MMS8050 J3Y Transistor MARKING Transistor hFE CLASSIFICATION Marking CE

    j3y transistor

    Abstract: transistor J3Y MMS8050 sot-23 Marking J3Y SOT-23 J3Y J3Y marking code .j3y .j3y transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS8050 OT-23 -55OC OT-23 j3y transistor transistor J3Y MMS8050 sot-23 Marking J3Y SOT-23 J3Y J3Y marking code .j3y .j3y transistor

    j3y transistor

    Abstract: transistor J3Y SOT-23 J3Y .j3y transistor sot-23 Marking J3Y MMS8050-H J3Y marking code MMS8050-L
    Text: MCC TM Micro Commercial Components MMS8050-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050-H Features • • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS8050-L MMS8050-H OT-23 -55OC OT-23 100uAdc, j3y transistor transistor J3Y SOT-23 J3Y .j3y transistor sot-23 Marking J3Y MMS8050-H J3Y marking code

    MMS8050-L

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMS8050-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050-H Features • • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.


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    PDF MMS8050-L MMS8050-H OT-23 -55OC OT-23 MMS8050-L

    j3y transistor

    Abstract: .j3y transistor MMS8050-L
    Text: MCC MMS8050-L TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8050-H Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"


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    PDF MMS8050-L MMS8050-H OT-23 -55OC j3y transistor .j3y transistor MMS8050-L

    2SC2116

    Abstract: TRANSISTOR S 813
    Text: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING


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    PDF 2sc2116 500MHz 2SC2116 TRANSISTOR S 813

    toshiba sb-500

    Abstract: 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar
    Text: ^j3yNPNx^5>^ì/j> by\^-tB^yv^9 2s c 387Ag SILICON NPN EPITAXIAL PLANAR TRANSISTOR i# te ffi O VHF » o uhf * 56 m m INDUSTRIAL APPLICATIONS Unit in mm o VHF Amplifier Applications o UHF Oscillator Applications h =? v y a y IS $. S i * ' ¡5 V ' o f T = 1000MHz Typ. )


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    PDF 1000MHz 95MAX. 2sc387AÂ 387AG toshiba sb-500 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar

    TRANSISTOR 2SC

    Abstract: 2SC387A transistor 2sc 387A 30MHZ V600 f630 7500f my60
    Text: ^'J3yNPNx\^5i^p \,7u-tmhÿyvx5> 2 s c 387A SILICON NPN EPITAXIAL PLANAR TRANSISTOR O TUt UHF f i - í ¡ o TV UHF Oscillator Applications Unit in mm 2f58MAX. Ì y 's ï \ fT = 1200MHz Typ.) 9 3 0 M H z -C + a - 4 ^ J S t B ! P0 = 8mW( Typ. )(f= 930MHz) MAXIMUM RATINGS


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    PDF 2f58MAX. 1200MHz 930MHz) TRANSISTOR 2SC 2SC387A transistor 2sc 387A 30MHZ V600 f630 7500f my60

    2SC398

    Abstract: 2SC399 IC c399 TB9.C c3982 VAAC
    Text: 25C398 2 s c 399 O fn ; vhp t ^ z;'J3yNPNI.£5>*^J> l7ls-t]&^yVZ5> SILICON NPN EPITAXIAL PLANAR TRANSISTOR ffl R FifiWffl ; 8SC398 2SC3 99 Unit in mm -ê- ffl; 2 Í& 8 M A X . o TV V H F Tuner A p p l ications RF Amplifier M ixer • M m m r - r 0 4 .9 5 M A X .


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    PDF 2SC398 2SC399 8SC398 200MHz) 3SC399 800MHz) 2SC399 IC c399 TB9.C c3982 VAAC

    RF Transistor s-parameter at 4GHz

    Abstract: 2SC1551 2SC155 s-parameter RF POWER TRANSISTOR NPN TRANSISTOR 2SC
    Text: $''J3yNPNT£5>*^J’il7 [ s -tB ^ y V Z 5 > 2s c 1551 SILICON NPN EPITAXIAL PLANAR TRANSISTOR O i II Xi ffl U H F -C -v o -r y + v r m INDUSTRIAL APPLICATIONS O UHF~C O H igh S peed S w itc h in g A p p l i c a t i o n s Band L o w N o ìb » A m p l i f i e r A p p l i c a t i o n s


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    PDF 2SC1551 RF Transistor s-parameter at 4GHz 2SC1551 2SC155 s-parameter RF POWER TRANSISTOR NPN TRANSISTOR 2SC