MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BLW81
Abstract: transistor rf m 1104
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
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BLW81
BLW81
transistor rf m 1104
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c 3421 transistor
Abstract: d 3421 transistor J802
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
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100-Watts
MJ4502
c 3421 transistor
d 3421 transistor
J802
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mj802
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA M J802 H igh-Pow er NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR
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MJ802/D
MJ4502
O-204AA
mj802
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK565-100A
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Untitled
Abstract: No abstract text available
Text: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN1967CT
RN1969CT
RN1968CT
RN2967CT
RN2969CT
RN1968CT
RN1967CT
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Untitled
Abstract: No abstract text available
Text: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN1967CT
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RN2967CT
RN2969CT
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PVB42004X
Abstract: SC15 sot445
Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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PVB42004X
OT445A
SCA53
127147/00/02/pp8
PVB42004X
SC15
sot445
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diode BY239
Abstract: BD239 BY239 LLE16045X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16045X
SCA53
127147/00/02/pp12
diode BY239
BD239
BY239
LLE16045X
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Philips 2222-030
Abstract: philips resistor 2322 4312 020 36640 philips catalog potentiometer 100 pf, ATC Chip Capacitor 100A BLF543 enamelled copper wire MDA487 class b power transistors datasheet current gain IEC -320 C14
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain
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BLF543
SC08b
MBB072
MBA931
OT171
Philips 2222-030
philips resistor 2322
4312 020 36640
philips catalog potentiometer
100 pf, ATC Chip Capacitor 100A
BLF543
enamelled copper wire
MDA487
class b power transistors datasheet current gain
IEC -320 C14
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SOT123 Package
Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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BLF145
SC08a
OT123
SOT123 Package
enamelled copper wire tables
HF SSB APPLICATIONS
BLF145
J119 transistor
J-146
MGP040
j146
enamelled copper wire mm table
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S9018W
Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323
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S9018W
200mW)
OT-323
S9018
BL/SSSTF060
S9018W
s9018
transistor S9018
transistor SOT J8
S9018 transistor
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enamelled copper wire tables
Abstract: BLF145 J146 J-146
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage
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BLF145
OT123
MBB072
enamelled copper wire tables
BLF145
J146
J-146
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
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4312 020 36640
Abstract: BLF543 MDA489 MRA991
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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BLF543
MBA931
OT171
4312 020 36640
BLF543
MDA489
MRA991
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
Oct2011
marking 7W 66
AN-UHF-105
transistor jc 817
AN-UHF-116
AN-UHF116
GP 830 diode
diode gp 424
AN-900-041
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SSB transmitter
Abstract: 7540 Group BLF145
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF145 HF power MOS transistor Product specification Supersedes data of 1997 Dec 12 2003 Oct 13 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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M3D065
BLF145
OT123A
SCA75
613524/03/pp15
SSB transmitter
7540 Group
BLF145
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
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WBFBP-03B
TV9018NND03
WBFBP-03B
400MHz
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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LTE42012R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency
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OT440A
SCA53
127147/00/02/pp12
LTE42012R
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