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    TRANSISTOR JSW 12 Search Results

    TRANSISTOR JSW 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JSW 12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN4001

    Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
    Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at


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    AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier PDF

    HSML-2822

    Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
    Text: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between


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    HSMP382x 10Agilent 11Agilent AV02-2139EN HSML-2822 varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW PDF

    BTS5460SF

    Abstract: GPS01089 JESD51-2
    Text: SPI Power Controller SPOC - BTS5460SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS5460SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    BTS5460SF BTS5460SF GPS01089 JESD51-2 PDF

    BTS5480SF

    Abstract: GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12
    Text: SPI Power Controller SPOC - BTS5480SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS5480SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    BTS5480SF BTS5480SF GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12 PDF

    GPS01089

    Abstract: DCPWM JESD51-2
    Text: SPI Power Controller SPOC - BTS6460SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS6460SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    BTS6460SF GPS01089 DCPWM JESD51-2 PDF

    BTS6480SF

    Abstract: PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2
    Text: SPI Power Controller SPOC - BTS6480SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS6480SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    BTS6480SF BTS6480SF PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN


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    BUR20 BUR20 300ns, 10MHz PDF

    transistor JSW

    Abstract: jSw Diode
    Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    MG200Q1US51 transistor JSW jSw Diode PDF

    TRANSFORMER bck 03

    Abstract: transistor JSW 07 OP295
    Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable


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    0P-295/0P-495 OP-295 14-Lead TRANSFORMER bck 03 transistor JSW 07 OP295 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.


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    MG15Q6ES50A 961001EAA1 TjS125Â PDF

    jSw Diode

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


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    MG300Q2YS50 961001EAA1 jSw Diode PDF

    transistor JSW

    Abstract: toshiba srf
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    MG200Q2YS50 transistor JSW toshiba srf PDF

    transistor JSW

    Abstract: diode JSW FL 576-K125
    Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM


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    6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    MG200Q2YS50 TjS125Â PDF

    Untitled

    Abstract: No abstract text available
    Text: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current


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    120pA T0-220 LT1072 LT1082 LT1082 T0-22Q PDF

    ic 7485 4 bit comparator

    Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
    Text: ^ Tex as In s t r u m e n t s CD4585B Types Data sheet acquired from Harris S em iconductor SCHS091 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating • CD4585B is a 4-bit magnitude com­ parator designed for use in computer and logic applications that require the comparison


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    SCHS091 CD4585B 20-Volt CD45858 ic 7485 4 bit comparator 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table transistor JSW PDF

    tc6105

    Abstract: 2SK679 BH rn transistor 10285 TC-6105
    Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8


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    2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285 PDF

    transistor JSW

    Abstract: SSM2135
    Text: JUL e 199Û Dual Single-Supply Audio Operational Amplifier ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V lïz Equivalent Input Noise @ 1 kHz 0.001% THD+N Vn = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth


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    SSM-2135 2000E transistor JSW SSM2135 PDF

    low noise Microphone Preamplifier

    Abstract: SSM2135
    Text: BACK Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth


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    SSM-2135 SSM-2135 SSM2135 low noise Microphone Preamplifier SSM2135 PDF

    Amplitude Modulation using tractor diode

    Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
    Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V Hz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable


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    SSM2135 SSM-2135 volt75Eâ SSM-2135 2000E 65E-04 Amplitude Modulation using tractor diode RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135 PDF

    differential electret condenser microphone preamp

    Abstract: transistor JSW 12 SSM2135
    Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V fiz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable


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    SSM2135 SSM-2135 differential electret condenser microphone preamp transistor JSW 12 SSM2135 PDF

    transistor JSW 12

    Abstract: Sonic Drive SSM2135
    Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable


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    SSM2135 SSM-2135 transistor JSW 12 Sonic Drive SSM2135 PDF

    transistor JSW

    Abstract: No abstract text available
    Text: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable


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    OP-113/0P-213/0P-413* OP-113 53E16 OP113 transistor JSW PDF

    Untitled

    Abstract: No abstract text available
    Text: C 2 î ¡992 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier OP-213* PIN CONNECTIONS FEATURES Single or Dual Supply Operation Low Noise: 5 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jj.V Very Low Drift: 0.2 nV/°C


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    OP-213* P-213 OP-213. 53E16 OP-213 PDF