TRANSISTOR K 314 Search Results

TRANSISTOR K 314 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR K 314 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6R160C6 Abstract: IPB60R160C6 IPA60R160C6 transistor 600v IPP60R160C6 IPW60R160C6 JESD22 6R160 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 6R160C6 IPB60R160C6 IPA60R160C6 transistor 600v IPW60R160C6 JESD22 6R160	PDF
smd transistor 8c Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
smd transistor 8c Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
Untitled Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6	PDF
smd transistor 8c Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c	PDF
VTO-8090 Abstract: No abstract text available Text: Wtiili HEWLETT mL'HM PA C K A R D Avantek Products Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features Description Pin Configuration • 300 MHz to 10.5 GHz Coverage IIP VTG-8000 Scries oscillators use a silicon transistor chip as a negative	OCR Scan	VTO-8000 VTG-8000 VTO-8000 VTO-8090 VTO-8950 VTO-8850	PDF
RF POWER TRANSISTOR 100MHz Abstract: BOX69477 high Power Amplifier 100mhz BF31 Text: BF 314 NPN HI GH frequency / SILICON « s » g s E K 5gsnäg»"-js 55 3 » SSS? j E s «rife«. ï PLANAR EPITAXIAL t r a n s is to r ?p SS5: •«%« & gx MECHANICAL OUTLINE DESCRIPTION ; GGENERAL ì The BF314 is a NENf silicon plana: epitaxial transistor designed for use	OCR Scan	O-92F VSE-10V 120oh 200MHz f-100MHz r-100MHz 100MHz VCB-10V RF POWER TRANSISTOR 100MHz BOX69477 high Power Amplifier 100mhz BF31	PDF
Untitled Abstract: No abstract text available Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9635-100A	PDF
BUK9535 Abstract: BUK9635-100A Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9635-100A BUK9535 BUK9635-100A	PDF
Untitled Abstract: No abstract text available Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9635-100A 771-BUK9635-100A118 BUK9635-100A	PDF
2SK315 Abstract: No abstract text available Text: Ordering number : EN1005B _ 2 S K 5 1 5 -Channel Junction Silicon Field-Effect Transistor FM T u n e r A p p l i c a t i o n s Features * Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact,	OCR Scan	EN1005B -10pA Nsl005-5/5 2SK315	PDF
transistor rf type M 2530 Abstract: signal path designer INA02170 Text: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.	OCR Scan	INA-02: INA-03: AN-S011: transistor rf type M 2530 signal path designer INA02170	PDF
FMG1 Abstract: No abstract text available Text: h -7 > V ^ /T r a n s is t o r s ROHM CO LTD • ■ w l^ l ■ MOE D ^ FMG1 TflEflSTT QOOfc.314 7 ■ RHM B /^/In verter Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • • # J f2 T j- ^ @ /D in w n s io n s { U n it:r n m 1) K /f-y - i r - v t '	OCR Scan	41GND 100MA DGGb31S FMG1	PDF
6842 motorola Abstract: MPQ6842 MMPQ6842 Text: MOTOROLA Order this document by MMPQ6842/D SEMICONDUCTOR TECHNICAL DATA Quad MPU Clock Buffer Transistor NPN/PNP Silicon MMPQ6842 3 EU V I 1 [I 1 E 3 E 1 u v ^ E 3 Cz 1 E H k Voltage and current are negative for PNP transistors CASE 751B-05, STYLE 4 SO-16	OCR Scan	MMPQ6842/D MMPQ6842 751B-05, SO-16 66negligent 6842/D 6842 motorola MPQ6842 MMPQ6842	PDF

Untitled Abstract: No abstract text available Text: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ 57 S C S -T H O M S O N IL C K g ra ! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE	OCR Scan	TE45N IRFP450 E81743) STE45N50	PDF
hfa3102-matched Abstract: No abstract text available Text: High Frequency AGC Has Digital Control S em iconductor I A p p li c a t i o n N o te J u n e 1998 AN 9816 Introduction G = K V . n \|V B3\| e q - 1 The gain-control and bias-stability parameters of the circuit depend on the transistor matching, so the circuit uses a	OCR Scan	50MHz. hfa3102-matched	PDF
TCA 700 v Abstract: TCA 700 TCA 160 TCA 150 t 6 pin TRANSISTOR SMD CODE PA A 671 transistor TR 671 TOP 2 TCA971 Tca671 671 transistor Text: 47E D m ÖEBSbQS 003MÖ70 b « S I E G SI EM EN S A K T I E N G E S E L L S C H A F Transistor Array with 5 NPN Transistors TCA 671 TCA 871 TCA 971 TCA 991 Features Bipolar IC • • • • • Versatile use Slight l/BE and B deviations High output current	OCR Scan	235b05 Q67000-T1 P-DIP-14 Q67000-A2366 P-DSO-14 Q67000-T2 Q67000-A2367 Q67000-T11 TCA 700 v TCA 700 TCA 160 TCA 150 t 6 pin TRANSISTOR SMD CODE PA A 671 transistor TR 671 TOP 2 TCA971 Tca671 671 transistor	PDF
Untitled Abstract: No abstract text available Text: SOT23 NPN SILICON PLANAR M ED IU M POWER DARLINGTON TRANSISTOR FMMT614 ISSU E 2 - FEBRUARY 1996_ FEATU RES * hFE up to 5k at lc= 500m A * Fast switching * L o w V CElsa« a t H '9 h l c P A R T M A R K IN G D E T A IL S - 6 1 4 ABSOLUTE MAXIMUM RATINGS.	OCR Scan	FMMT614 500mA, 100mA, 100mHz	PDF
Untitled Abstract: No abstract text available Text: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O C O M P L E M E N T A R Y TY PE F M M T 4 9 3 P A R T M A R K IN G DETA IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	FMMT593 100mA	PDF
T3HS Abstract: No abstract text available Text: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .	OCR Scan	2SC3142 750MHz T3HS	PDF
CA314E Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward Text: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 \| Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E	OCR Scan	CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, RCA-CA3118AT, CA3118T, CA314E CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward	PDF
transistor BC 306A Abstract: No abstract text available Text: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8	Original	LC665304A, 65306A, 65308A, 65312A, 65316A 3149-DIP48S LC665304A/665306A/665308A/665312A/665316A 51min DIP48S 3156-QFP48E transistor BC 306A	PDF
LC66E2516 Abstract: transistor BC 306A TI0H LC665304A LC665306A LC665308A LC665312A LC665316A LC66599 LC66E5316 Text: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8	Original	LC665304A, 65306A, 65308A, 65312A, 65316A 3149-DIP48S LC665304A/665306A/665308A/665312A/665316A 51min DIP48S 3156-QFP48E LC66E2516 transistor BC 306A TI0H LC665304A LC665306A LC665308A LC665312A LC665316A LC66599 LC66E5316	PDF
Untitled Abstract: No abstract text available Text: ¡2 h a r r C A 3140A CA3140 i s BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 1 9 9 1 Features D escription • MOSFET Input Stage The CA3140A and CA3140 are integrated-circuit operational amplifiers that combine the advantages of highvoltage PMOS transistors with high-voltage bipolar	OCR Scan	CA3140 CA3140A CA3140 CA3130	PDF

TRANSISTOR K 314 Search Results

TRANSISTOR K 314 Result Highlights (5)

TRANSISTOR K 314 Datasheets Context Search

6R160C6

smd transistor 8c

smd transistor 8c

Untitled

smd transistor 8c

VTO-8090

RF POWER TRANSISTOR 100MHz

Untitled

BUK9535

Untitled

2SK315

transistor rf type M 2530

FMG1

6842 motorola

Untitled

hfa3102-matched

TCA 700 v

Untitled

Untitled

T3HS

CA314E

transistor BC 306A

LC66E2516

Untitled