TRANSISTOR K 425 Search Results

TRANSISTOR K 425 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR K 425 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N4428 Abstract: No abstract text available Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 1 2N4428 *a A 4>b «bi 4>0 »Dt h 1 k 1 I, 1: P Q MAXIMUM RATINGS 425mA Ic VCE 30V	Original	2N4428 425mA 2N4428	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
2N7091 Abstract: No abstract text available Text: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1	OCR Scan	2N7091 O-257AB 2N7091	PDF
Untitled Abstract: No abstract text available Text: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4910E F4310E F4914E F4918E F4919E MGF4910E	PDF
ASI10686 Abstract: 4X06 Text: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 21.6 A IC 65 V VCBO 65 V	Original	ASI10686 ASI10686 4X06	PDF
K1167 Abstract: ASI10687 transistor A 584 Text: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 43.2 A IC 65 V VCBO 65 V	Original	ASI10687 K1167 ASI10687 transistor A 584	PDF
Untitled Abstract: No abstract text available Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,	OCR Scan	2SK1123	PDF
transistor tt 2222 Abstract: TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor BLV58 IJBA970 Text: Philips Semiconductors • 7 1 1 0 6 2b P O b ER b l bME ■ P HIN ^^Productspecifica«^ UHF linear push-pull power _ transistor ph ilips international FEA TU RES • High power gain d Q U IC K R E F E R E N C E DATA R F performance at T h = 25 CC in a common emitter test circuit.	OCR Scan	711D6Sb BLV58 BLV58 OT289 OT289 transistor tt 2222 TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor IJBA970	PDF
Untitled Abstract: No abstract text available Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8	OCR Scan	CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA	PDF
Untitled Abstract: No abstract text available Text: Circuit Board Thermocouple Connectors Shown 2x Actual Size Miniature Standard and Miniature Sizes; Type PCC GlassFilled Nylon 220oC 425oF Standard MADE IN USA ߜ For OEM Uses ߜ Attaches Directly to Circuit Board ߜ Perfect for Handheld Thermometers ߜ J, K, T and E	Original	220oC 425oF) PCC-SMP-K-100-R,	PDF
transistor T K 2056 Abstract: K 2056 transistor transistor K 2056 Text: SANYO SEMICONDUCTOR 12E CORP D \| 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage	OCR Scan	SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056	PDF
SOT103 Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425 Text: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures	OCR Scan	BFR591 7110fl2fc, BFR591 OT103 USB037 OT103. IS21I* SOT103 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425	PDF
2N4256 Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N32mA, NPN, PNP for 500ma, 30v 2b0-b 2N5305	PDF
0.2MF CAPACITOR Abstract: TIL111 equivalent til111 DI-425 Text: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec	OCR Scan	DI-425 0.2MF CAPACITOR TIL111 equivalent til111 DI-425	PDF

Transistor TT 2246 Abstract: single-supply wein bridge oscillator picoammeter schematic diagram TT 2246 transistor CA5160AE staircase generator CA5160 Wien Bridge Oscillator opamp CA5160E CA5160M Text: HARRIS SEMICOND SECTOR blE ]> • 4302271 004b407 425 H H A S Cm HARRIS U U CA5160 S E M IC O N D U C T O R BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stag* • Vary High Zj; 1-5Tfl 1 J x 1012Q Typ.	OCR Scan	004b407 CA5160 CA516QA CA5160 CA5130 CA3600 CA5160. CA3600E Transistor TT 2246 single-supply wein bridge oscillator picoammeter schematic diagram TT 2246 transistor CA5160AE staircase generator Wien Bridge Oscillator opamp CA5160E CA5160M	PDF
BLP05M7200 Abstract: No abstract text available Text: BLP05M7200 Power LDMOS transistor Rev. 1 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.	Original	BLP05M7200 2002/95/EC, BLP05M7200	PDF
Untitled Abstract: No abstract text available Text: 3 SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866T51/OPB866T55 PACKAGE DIMENSIONS DESCRIPTION S E E NOTE 3 © 9 q — O P T IC A L •1 2 5 (3 -17 C E N T E R L IN E V r-.313 (7.94) U.485 (12.32) r-110 (2.79) .345 (8.76) J L. T .020 (0.51 K .425 P (10.80)	OCR Scan	OPB866T51/OPB866T55 r-110 100juA, OPB866T51 OPB866T55 74bb051	PDF
BCM 4359 Abstract: transistor 4287 AB transistor 3901 Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A	OCR Scan	O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901	PDF
2SD425 Abstract: toshiba 2sd425 2SB556 251C 2SB55 2SB555 2SD426 3g2q Text: ^ 'jD y N P N E M m w L W M h ^ y v x ? SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o n n m o m 2 s d 425 À 2 s d 42G U n i t i n mm m Pover A m p lifie r A p p lic a tio n s 02&OUAK. 0 2 1 .0 :*MAX. n • Irto : P C= 10 0 W 2 S D 4 2 5 ,2 S D 4 2 6 v j> t	OCR Scan	2SD425 2SD426 2SB555 2SB55 COLLEC25 55BEE toshiba 2sd425 2SB556 251C 2SD426 3g2q	PDF
L3317 Abstract: No abstract text available Text: O rd e rin g n u m b e r: E 42589 CMOS LEI F SA\YO I LC7365N, 7366N N a2SB y L i D T M F T o n e G e n e r a to r fo r P u s h b a tto n T e le p h o n e T h e LC 7 3 G 5 N , 73G6N ere D T M F lone g en erato r L S t s for use in pushbuLton telephones. T h e LC 73G 5N con tains * k eyb o ard scan c irc u it Bnd the L C 7 3 S 6 N c a n d ire c t accept the Output from 0	OCR Scan	LC7365N, 7366N 73G6N L3317	PDF
Untitled Abstract: No abstract text available Text: General Purpose Miniature Probes For Handheld Temperature Meters ߜ Made from Special MADE IN Limits of Error Material ߜ 6" Length Standard Shown smaller than actual size ߜ 1⁄8" OD Stainless Steel Sheath ߜ Molded Junction Discount Schedule Rated to 218°C 425°F	Original	HH66PP HH66SP HH66LP HH66AP HH66-BATT HH66LP,	PDF
u28 sensor hall Abstract: MLX2882 u28 hall marking 865 amplifier TLE4905 equivalent ss41 hall effect sensor melexis hall current sensor HAL105 UGN3132/33/34UA US2881 Text: 865;425;5# &026#+LJK#6HQVLWLYLW\#/DWFK#### HDWXUHV#DQG#%HQHILWV## • ■ ■ ■ ■ ■ Chopper Stabilized Amplifier Stage Optimized for BDC Motor Applications New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V CMOS for Optimum Stability, Quality and Cost	Original	US2881 US2882 u28 sensor hall MLX2882 u28 hall marking 865 amplifier TLE4905 equivalent ss41 hall effect sensor melexis hall current sensor HAL105 UGN3132/33/34UA	PDF
Untitled Abstract: No abstract text available Text: 375Vin / 5Vout / 400Watts DC-DC Converter Module Model Number V375A5C400A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 5V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load	OCR Scan	375Vin 400Watts 100ms V375A5C400A	PDF
Untitled Abstract: No abstract text available Text: 375Vin / 48Vout / 600Watts DC-DC Converter Module Model Number V375A48C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 48V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load	OCR Scan	375Vin 48Vout 600Watts 100ms 20W/cubic V375A48C600A	PDF

TRANSISTOR K 425 Search Results

TRANSISTOR K 425 Result Highlights (5)

TRANSISTOR K 425 Datasheets Context Search

2N4428

transistor vergleichsliste

2N7091

Untitled

ASI10686

K1167

Untitled

transistor tt 2222

Untitled

Untitled

transistor T K 2056

SOT103

2N4256

0.2MF CAPACITOR

Transistor TT 2246

BLP05M7200

Untitled

BCM 4359

2SD425

L3317

Untitled

u28 sensor hall

Untitled

Untitled