TRANSISTOR BC 252
Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
Text: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on
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ppgfl771
BUV56
T-33-13
TRANSISTOR BC 252
BUV56
L05A
schematic diagram UPS
15V 5A Power Supply Schematic
380v UPS diagram
Scans-007954
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Untitled
Abstract: No abstract text available
Text: 2N5886 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N5886 is a Power Transistor for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 I.* ” .1 35 I MAX. MAXIMUM RATINGS lc 1 .1 V ,420 P diss II ,Q3»~ -^J-» .043 f? K* 200 W @ Tc = 25 °C
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2N5886
2N5886
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marking "l34"
Abstract: No abstract text available
Text: SILICON TRANSISTO R FA1A4P MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD F E A TU R E S P A C K A G I DIMENSIONS • in m illim eters Resistors B u ilt-in TYPE R t = 10 kÌ2 R2 = 4 7 k i2 • C om plem entary to FN 1A4P A B S O LU T E M A X IM U M R A T IN G S
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ktA1271 Y
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K J MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G D SYMBOL RATING UNIT Collector-Base Voltage
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KTA1271
KTC3203.
ktA1271 Y
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KTA1271
Abstract: KTC3203 Y KTC3203 ktc3203 transistor transistor ktc3203 ktC3203 y transistor KTA1271 transistor
Text: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G J D SYMBOL RATING UNIT Collector-Base Voltage
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KTA1271
KTC3203.
KTA1271
KTC3203 Y
KTC3203
ktc3203 transistor
transistor ktc3203
ktC3203 y transistor
KTA1271 transistor
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S
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2SK703
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NPN Transistor 2N3055
Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Text: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525
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2N3055
O-204AA
NPN Transistor 2N3055
transistor 2N3055
2N3055
J 2N3055
transistor k 525
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)
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2SK3132
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TAG 92 transistor
Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
Text: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.
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00b7Bfl4
BSS100
7110flEb
Vdd-60V
7Z88773
TAG 92 transistor
philips transformer 524
BSS100
BSS100 TO92
BTB 134
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK3131 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS
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2SK3131
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SD1492
Abstract: M 208
Text: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K
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SD1492
SD1492
M 208
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LT 5251
Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >
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02SD4711
cycleS50%
LT 5251
2s87
a1t transistor
TRANSISTOR A1t
Y500200
t430 transistor
transistor bc 541
5251 F ic
T440
2SB564
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Untitled
Abstract: No abstract text available
Text: 2N6054 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 8.0 A lc -80 V ce 100 W @ T C = 25 °C P diss 65 °C to +200 °C
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2N6054
2N6054
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Untitled
Abstract: No abstract text available
Text: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.
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2N6306
2N6306
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2SK3132
Abstract: K313 2SK313
Text: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS
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2SK3132
2SK3132
K313
2SK313
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2SK3131
Abstract: No abstract text available
Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS
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2SK3131
2SK3131
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ST25C
Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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00DRS51
flBES100
VB-12SV
ST25C
st 25 c
transistor electronic ballast for T12
but54
BVW32
transistor a09
transistor 800V 1A
Scans-0014927
A08A
14TI
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K3131
Abstract: 2SK3131
Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)
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2SK3131
K3131
2SK3131
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Untitled
Abstract: No abstract text available
Text: m 2N6496 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 15 A lc V 110 V ce 140 W @ T C = 25 °C P diss -65 °C to +200 °C Tj
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2N6496
2N6496
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transistor BC 245
Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time
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00DRS51
flBES100
T0126
15A3DIN
transistor BC 245
transistor BC 245 c
ST25C
transistor bc 138
FC4A
TRANSISTOR BC 137
but54
TELEFUNKEN
12A3
T0126
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SK3132
Abstract: k313 LM k313 2SK3132
Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON) = 0.07 Ci (Typ.)
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2SK3132
SK3132
k313 LM
k313
2SK3132
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Untitled
Abstract: No abstract text available
Text: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C
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2N6052
2N6052
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BUK7620-100A
Abstract: 03nd56
Text: D2 PA K BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7620-100A
BUK7620-100A
03nd56
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7620-100A
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