TRANSISTOR K 903 Search Results

TRANSISTOR K 903 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR K 903 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MLX81100 Abstract: melexis hall current sensor Text: Application Note MLX81100 Power Dissipation Table of contents 1 Introduction. 2 2 Schematics of example Applications. 2	Original	MLX81100 MLX81100 ISO14001 melexis hall current sensor	PDF
OXF9 Abstract: No abstract text available Text: TLX HEW LETT WSEm P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:	OCR Scan	AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23, OXF*9	PDF
marking CODE 24 Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK FEATURES • Built-in bias resistor R1 typ. 10 k£2 • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space	OCR Scan	SC-59 PDTA114TK. PDTC114TK marking CODE 24	PDF
BN1A4M Abstract: un8h 5942 Text: - J - 57 . C / -tt^ê* h ~7 C om po und Transistor BN1 A 4 M m tte m ft PNP X e m $ W IU ^ -fô : m m * O s < 4 7 X í É í ñ ; £ F í3 j l L - 0 ' ¿ 1 ' o (R i = o B A I A 4 M 10 t k Q , R 2 = 10 k Q ) =¡ > 7 ° U t ( T a n =	OCR Scan		PDF
K 2645 transistor Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645	PDF
2N5302 EB Abstract: 2N1463 2n4271 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3	OCR Scan	SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271	PDF
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716	PDF
5N520 Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278 Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V	OCR Scan	0-300V 2N1938 2N1937 2N3265 2N6260 2N6261 2N6315 2N6317 2N6316 2N6318 5N520 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278	PDF
2A 5v ZENER DIODE Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ Text: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to	OCR Scan	2SD2170 SC-62 30MHz 2A 5v ZENER DIODE 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ	PDF
K 2645 transistor Abstract: transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927 Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply featu res: • in triple diffusion technique • Short switching time	OCR Scan	0QEH503 IAL66 T-33-13 DIN41 K 2645 transistor transistor d 2645 p 01 k 2645 transistor BU 608 TRANSISTOR K 2645 transistor K 903 101S-122 101S t33-13 Scans-0014927	PDF
2N5075 Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C	OCR Scan	b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957	PDF
transistor BU 102 Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300 Text: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W	OCR Scan	T-33-13 transistor BU 102 transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300	PDF
D 400 F 6 F BIPOLAR TRANSISTOR Abstract: No abstract text available Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope	OCR Scan	BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR	PDF
2N2692 Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563 Text: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905	OCR Scan	2N37B9 2N3713 2N3790 2N3714 2N3791 2N3715 2N6589 2N6590 2N6689 2N6690 2N2692 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563	PDF

Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor Clamped togic level FET BUK573-48C GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	BUK573-48C OT186A IB-02 1E-03 1E-04 IE-05 1E-06	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
amplifier blw96 Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414 Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents	OCR Scan	BLW96 7110fl2b DDb3453 amplifier blw96 BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF
EM- 546 motor Abstract: 2N6545 2N6545 Motorola 2N6544 Text: MOTOROLA SC XSTRS/R F 12E D \| b3b72S4 QQflMbbt Ö \| T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,	OCR Scan	b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544	PDF
500 DKZ Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt	OCR Scan	150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren	PDF
PR37 RESISTOR Abstract: PR37 resistors Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents	OCR Scan	BLW96 PR37 RESISTOR PR37 resistors	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
rca transistor manual Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173 Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis	OCR Scan		PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF

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TRANSISTOR K 903 Search Results

TRANSISTOR K 903 Result Highlights (5)

TRANSISTOR K 903 Datasheets Context Search

MLX81100

OXF*9

marking CODE 24

BN1A4M

K 2645 transistor

2N5302 EB

2N4839

5N520

2A 5v ZENER DIODE

K 2645 transistor

2N5075

transistor BU 102

D 400 F 6 F BIPOLAR TRANSISTOR

2N2692

Untitled

BFG55A

amplifier blw96

2n189

EM- 546 motor

500 DKZ

PR37 RESISTOR

transistor f6 13003

rca transistor manual

RCA H 541