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    TRANSISTOR K3767 Search Results

    TRANSISTOR K3767 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K3767 Datasheets Context Search

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    k3767

    Abstract: transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767 transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent

    k3767

    Abstract: No abstract text available
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767

    Untitled

    Abstract: No abstract text available
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767

    transistor k3767

    Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767 equivalent k3767 2SK3767 equivalent

    transistor k3767

    Abstract: K3767 2SK3767
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2SK3767

    transistor k3767

    Abstract: K3767 2sk3767
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767