TRANSISTOR KF 303 Search Results

TRANSISTOR KF 303 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR KF 303 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
schottky DIODE MOTOROLA B14 Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver Text: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.	Original	PDF	AN1631/D AN1631 AN1520. schottky DIODE MOTOROLA B14 schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
kf 203 transistor Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver Text: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze	Original	PDF	AN1631/D AN1520/D. r14525 kf 203 transistor 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
Transistor E112 Abstract: TN13P5 E212 transistor E416 AN1503 spice e154 E155 Modelling DL140 Text: AN1503 Application Note  ECLinPS I/O SPICE Modelling Kit Prepared by Todd Pearson ECLinPS Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for high speed ECLinPS designs. The note	Original	PDF	AN1503 DL140 AN1503/D* AN1503/D Transistor E112 TN13P5 E212 transistor E416 AN1503 spice e154 E155 Modelling
BV-1 501 Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01 Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1	Original	PDF	LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
I1-205-5 Abstract: 1d1060 DIODE 10B3 IC str alexander pro AN-840 C1995 LM6181 Precision Monolithics Spice Parameter, 2N, Bipolar Transistor 10b3 Text: National Semiconductor Application Note 840 July 1992 ABSTRACT A current-feedback amplifier macromodel has been developed which simulates the more common small-signal effects such as small-signal transient response and frequency response as well as temperature effects noise and power	Original	PDF	LM6181 20-3A I1-205-5 1d1060 DIODE 10B3 IC str alexander pro AN-840 C1995 LM6181 Precision Monolithics Spice Parameter, 2N, Bipolar Transistor 10b3
2SC3953-SPICE Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f	Original	PDF	12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
MOTOROLA 526 Abstract: EL90 AN1503 AN1560 DL140 LVEL11 LVEL16 MJE 521 LVPECL Q26 elite Text: AN1560 Application Note Low Voltage ECLinPS SPICE Modeling Kit Prepared by Cleon Petty Motorola Logic Applications Engineering ECLinPS and ECLinPS Lite are trademarks of Motorola, Inc. 7/96  Motorola, Inc. 1996 5–1 REV 0 AN1560 Low Voltage ECLinPS SPICE Modeling Kit	Original	PDF	AN1560 AN1560/D* AN1560/D DL140 MOTOROLA 526 EL90 AN1503 AN1560 LVEL11 LVEL16 MJE 521 LVPECL Q26 elite
MC100EL92 Abstract: AN1560 EL90 SWITCH XCJC AN1503 DL140 LVEL11 LVEL16 motorola LOGIC Text: AN1560 Application Note Low Voltage ECLinPS SPICE Modeling Kit Prepared by Cleon Petty Motorola Logic Applications Engineering ECLinPS and ECLinPS Lite are trademarks of Motorola, Inc. 6/97  Motorola, Inc. 1997 1 REV 1 AN1560 Low Voltage ECLinPS SPICE Modeling Kit	Original	PDF	AN1560 DL140 AN1560/D MC100EL92 AN1560 EL90 SWITCH XCJC AN1503 LVEL11 LVEL16 motorola LOGIC
k0304 Abstract: K0204 N03m DIODE C06 15 k0203 26M transistor 473e K0607WB resistor 56E L05 diode Text: AND8010/D ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE ON Semiconductor Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level	Original	PDF	AND8010/D MC100LVELT22 LVELT22" LVELT22 LVELT22 r14525 k0304 K0204 N03m DIODE C06 15 k0203 26M transistor 473e K0607WB resistor 56E L05 diode
recent advances in linear vco calculations Abstract: rohde variable frequency generator 2058d 50MHz Colpitts VCO Design Considerations for BJT Active Mixers led calvin frequency stability analysis colpitts oscillator 012579OB2 transistors for uhf oscillators Text: RECENT ADVANCES IN LINEAR VCO CALCULATIONS, VCO DESIGN AND SPURIOUS ANALYSES OF FRACTIONAL-N SYNTHESIZERS By Ulrich L. Rohde* Günther Klage * INTRODUCTION Modern advanced synthesizers take advantage of the fractional synthesis principle where the noise of the synthesizer inside the loop bandwidth is mainly controlled by all the active	Original	PDF	10MHz 15KHz. recent advances in linear vco calculations rohde variable frequency generator 2058d 50MHz Colpitts VCO Design Considerations for BJT Active Mixers led calvin frequency stability analysis colpitts oscillator 012579OB2 transistors for uhf oscillators
N03m Abstract: 794e k0203 N04m MC100LVELT22 motorola LOGIC L05 diode k0305 NE 544 spice model Text: AND8010/D  ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE Motorola Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level	Original	PDF	AND8010/D MC100LVELT22 LVELT22" LVELT22 LVELT22 r14153 N03m 794e k0203 N04m MC100LVELT22 motorola LOGIC L05 diode k0305 NE 544 spice model
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	PDF	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
transistors k2628 Abstract: k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324 Text: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 transistors k2628 k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324
transistor k1317 Abstract: K2225 k1317 transistors k2628 k1117 transistors K1317 k1118 k2225 transistor k1117 transistor transistor k1117 Text: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 transistor k1317 K2225 k1317 transistors k2628 k1117 transistors K1317 k1118 k2225 transistor k1117 transistor transistor k1117

k1117 Abstract: k2225 k2225 transistor k1117 transistor k1317 transistor k1317 transistor k1117 k1118 transistor k1213 k1213 Text: AN1503/D ECLinPS and ECLinPS Lite] SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	PDF	AN1503/D r14525 k1117 k2225 k2225 transistor k1117 transistor k1317 transistor k1317 transistor k1117 k1118 transistor k1213 k1213
k2225 transistor Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117 Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given	Original	PDF	AN1560/D 150Prepared AN1503 k2225 transistor k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
K1213 Abstract: k1518 transistor c1213 equivalent transistor k1213 k1112 K1113 k0305 k0205 k0309 equivalent k1117 Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given	Original	PDF	AN1560/D AN1503 r14525 K1213 k1518 transistor c1213 equivalent transistor k1213 k1112 K1113 k0305 k0205 k0309 equivalent k1117
k1213 Abstract: transistors k2628 transistor c1213 equivalent k1317 K0316 k2225 transistor k0232 k1117 k1518 k0317 Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given	Original	PDF	AN1560/D AN1503 r14525 AN1560/D k1213 transistors k2628 transistor c1213 equivalent k1317 K0316 k2225 transistor k0232 k1117 k1518 k0317
mje 1303 Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	PDF	NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X
BJT BF 331 Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	PDF	NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018
transistor bd 370 Abstract: transistor BD 110 Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc	OCR Scan	PDF	MMJT9435/D OT-223 MMJT9435 318E-04, transistor bd 370 transistor BD 110
Untitled Abstract: No abstract text available Text: f Z 7 Ä T # L9610C L 9611C S G S -T H O M S O N PWM POWER MOS CONTROLLER • HIGH EFFICIENCY DUE TO PWM CONTROL AND POWERMOS DRIVER ■ LOAD DUMP PROTECTION ■ LOAD POWER LIMITATION ■ EXTERNAL POWERMOS PROTECTION ■ LIMITED OUTPUT VOLTAGE SLEW RATE DESCRIPTION	OCR Scan	PDF	L9610C 9611C L9610C/11C
702 TRANSISTOR sot-23 Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	PDF	NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
mje 1303 Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	PDF	NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

Privacy Settings

TRANSISTOR KF 303 Search Results

TRANSISTOR KF 303 Result Highlights (5)

TRANSISTOR KF 303 Datasheets Context Search

schottky DIODE MOTOROLA B14

kf 203 transistor

Transistor E112

BV-1 501

I1-205-5

2SC3953-SPICE

MOTOROLA 526

MC100EL92

k0304

recent advances in linear vco calculations

N03m

transistor BF 697

transistors k2628

transistor k1317

k1117

k2225 transistor

K1213

k1213

mje 1303

BJT BF 331

transistor bd 370

Untitled

702 TRANSISTOR sot-23

mje 1303