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    TRANSISTOR KT 808 Search Results

    TRANSISTOR KT 808 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 808 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385

    2SD808

    Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2510B 2SC4134 Bipolar Transistor http://onsemi.com 100V, 1A, Low VCE sat , NPN Single TP/TP-FA Applications • Power supplies, relay drivers, lamp drivers Features • • • • High breakdown voltage and large current capacity Adoption FBET, MBIT processes


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    PDF EN2510B 2SC4134 2SC4134-applied

    siemens s7-300 battery replacement

    Abstract: siemens 300 Modular PLC features service manual SITOP siemens sitop power 20 electrical diagram siemens sitop power 40 siemens sitop power 10 6EP1931-2FC01 Maintenance Manual siemens sitop 6EP1437-3BA00 circuit diagram
    Text: Siemens AG 2013 SITOP Power Supply SITOP Catalog KT 10.1 Edition 2014 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Controls SIRIUS IC 10 E86060-K1010-A101-A2-7600 SIMATIC Products for Totally Integrated Automation E86060-K4921-A101-A3-7600


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    PDF E86060-K1010-A101-A2-7600 E86060-K4921-A101-A3-7600 E86060-K4678-A111-B8-7600 E86060-D4001-A510-D2-7600 80/ST E86060-K4680-A101-C1-7600 SINA9-7600 siemens s7-300 battery replacement siemens 300 Modular PLC features service manual SITOP siemens sitop power 20 electrical diagram siemens sitop power 40 siemens sitop power 10 6EP1931-2FC01 Maintenance Manual siemens sitop 6EP1437-3BA00 circuit diagram

    en2510

    Abstract: No abstract text available
    Text: 2SC4134 Ordering number : EN2510B SANYO Semiconductors DATA SHEET 2SC4134 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • Power supplies, relay drivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    PDF EN2510B 2SC4134 2SC4134-applied en2510

    U3761MB-X

    Abstract: transistor kt 312 b U3761MB clim LN 358 n U3761MB-XFNG3G MPSA42 2N5401 600w power amplifier circuit diagram
    Text: Features Speech Circuit • • • • Adjustable DC Characteristic Symmetrical Input of Microphone Amplifier Receiving Amplifier for Dynamic or Piezo-electric Earpieces Automatic Line-loss Compensation Dialer • • • • • • • • • • • •


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    PDF 4791B U3761MB-X transistor kt 312 b U3761MB clim LN 358 n U3761MB-XFNG3G MPSA42 2N5401 600w power amplifier circuit diagram

    4744a

    Abstract: ulg 2003 SSO44 MPSA42 168 key board matrix U3761MB-T transistor low noise preamp microphone
    Text: Features Speech Circuit • • • • Adjustable DC Characteristic Symmetrical Input of Microphone Amplifier Receiving Amplifier for Dynamic or Piezo-electric Earpieces Automatic Line-loss Compensation Dialer • • • • • • • • • • • •


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    U3761MB-X

    Abstract: Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB
    Text: Features Speech Circuit • • • • Adjustable DC Characteristic Symmetrical Input of Microphone Amplifier Receiving Amplifier for Dynamic or Piezo-electric Earpieces Automatic Line-loss Compensation Dialer • • • • • • • • • • • •


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    PDF 4791C U3761MB-X Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB

    2SD1618

    Abstract: No abstract text available
    Text: Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single PCP http://onsemi.com Features • • Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications


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    PDF EN1784C 2SD1618 250mm2Ã 2SD1618

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    PDF EN2511B 2SA1593/2SC4135 2SA1593/2SC4135-applied 2SA1593

    EN2019B

    Abstract: No abstract text available
    Text: Ordering number : EN2019B 2SB1124/2SD1624 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of FBET, MBIT processes


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    PDF EN2019B 2SB1124/2SD1624 2SB1124 EN2019B

    application of ohmmeter

    Abstract: ohmmeter AN3372 MPC7445 MPC7447A MPC7448 90-nm CMOS fet Low Resistance Ohmmeter Circuit
    Text: Freescale Semiconductor Application Note Document Number: AN3372 Rev. 0, 06/2007 Challenges in Testing for Power Rail Shorts with New Technologies by Michael Everman Networking and Computing Systems Group Freescale Semiconductor, Inc. Austin, TX This application note addresses a common challenge


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    PDF AN3372 application of ohmmeter ohmmeter AN3372 MPC7445 MPC7447A MPC7448 90-nm CMOS fet Low Resistance Ohmmeter Circuit

    358S

    Abstract: ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0
    Text: Ordering number:ENN3122A CMOS IC LC66P308 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P308 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC663XX series mask ROM devices, making it ideal for prototyping and


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    PDF ENN3122A LC66P308 LC66P308 LC663XX 42-pin 48-pin 358S ic 358s 356a transistor TR4943 transistor p02 Murata CST 11,0

    induction cooker fault finding diagrams

    Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF REJ27L0001-0101 induction cooker fault finding diagrams induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design

    dc gear motor 24v inductance

    Abstract: T511 012 T402-011 G1030 T730-012EL8 ENCODER OPTICAL 5310 pp031 SANMOTION Q T406-012EL8 ST25A
    Text: DC SERVO SYSTEMS T DC SERVO SYSTEMS E ENGLISH Characteristics 1. Equipment precision can be enhanced. ●High-resolution encoder 45,000 P/R can be mounted. PP038 2. Smooth drive is enabled. ●Improved performance with Approx. small-torque ripple 40 improvement


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    PDF PP038 500P/R) Rm2305 F-95958 dc gear motor 24v inductance T511 012 T402-011 G1030 T730-012EL8 ENCODER OPTICAL 5310 pp031 SANMOTION Q T406-012EL8 ST25A

    ku 606

    Abstract: KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren KT808 2107B-2
    Text: SERVICE-M ITTEILUNGEN VEB IN D U S T R IE V E R T R IE 8 R U N D F U N K U N D F E R N S EH EN ra d io -television AUSGABE: SEITE 1-4 DATUM: 3.84 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / SI E I H B A U A N L E I T Ü H G für den äquivalenten ?DE-Steckbaustein mit Transistor, der die Rohre 6 Sch 5 P in den Sü-Paxbfernseh^eraten RADUGA 726/730 ersetzt«


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    PDF 05A-K KT808 ku 606 KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren 2107B-2

    b0821

    Abstract: transistor s808 zy 406 transistor MARKING FAl zy 406 diode marking OX transistor 808 S-808 s80840an S-80810ANNP-E70-T2
    Text: TENTATIVE LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S~808 Series The S-808 Series is a high-precision voltage detector developed us ing CMOS process. The detection voltage is fixed internally, with an accuracy of ±2. 0%. Two output types, Nch open-drain and CMOS


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    PDF S-808 SC-82AB SC-82RA 75kQor b0821 transistor s808 zy 406 transistor MARKING FAl zy 406 diode marking OX transistor 808 s80840an S-80810ANNP-E70-T2

    KT 817 transistor

    Abstract: rema andante colortron service-mitteilungen KT 817 817 b Servicemitteilungen rema- radio Stassfurt Colortron KU 608
    Text: SERVICE-MITTEILUNGEN Kg gli radio television J - AUSGABE: 1985 CM VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FERNSEHEN Seite 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt 1. Hinweise zum Einsatz von Inline-Bildröhren des VEB WF Berlin


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    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


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    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


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    PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


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    PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES l c 2m o s □ FEATURES Eight 8-Bit DACs w ith Output Amplifiers Operates w ith Single or Dual Supplies liP Compatible 95ns WR Pulse No User Trims Required Skinny 24-Pin DIPs, SOIC, and 28-Terminal Surface Mount Packages Octal 8-Bit DAC AD7228A


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    PDF 24-Pin 28-Terminal AD7228A AD7228A 7228A 68008Interface 085A/Z80