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    TRANSISTOR L 043 A Search Results

    TRANSISTOR L 043 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR L 043 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# EMZ1 Features • x x x • • • Halogen free available upon request by adding suffix "-HF" 2SC2412 and 2SA1037 are housed independently in a package


    Original     		PDF 2SC2412 2SA1037 OT-563 OT-563,

    transistor k450

    Abstract: No abstract text available
    Text: , L/ne. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2063A Transistor, Bipolar, CE PNP Power Military/High-Rel : N V(BR)CEO (V) : 20 V(BR)CBO (V) : 40 i MAX. n U-.87S -J I(C) M a x . (A) : 5.0


    Original     		PDF 2N2063A transistor k450

    MJ423

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Oct-23th-2008 Last Buy Date :Dec-31th-2008 Description and Purpose: MCC has undergone a review of its core business and products , and determined to discontinue below products:


    Original     		PDF Oct-23th-2008 Dec-31th-2008 MJ423 10Vdc, MJ423

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Oct-23th-2008 Last Buy Date :Dec-31th-200 8 Note: All LTB orders need to be shipped before LTB date. Description and Purpose: MCC has undergone a review of its core business and products , and


    Original     		PDF Oct-23th-2008 Dec-31th-200 MJ423 10Vdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2383-R 2SC2383-O 2SC2383-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2SC2383-R 2SC2383-O 2SC2383-Y -55OC C2383

    MARKING H1

    Abstract: umh1 UMH1N
    Text: MCC TM Micro Commercial Components UMH1N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Two DTC124E chip in a package Mounting possible with SOT-363 automatic mounting machines.


    Original     		PDF DTC124E OT-363 OT-363 MARKING H1 umh1 UMH1N

    68L SOT 353

    Abstract: tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm
    Text: SECTION 11 PACKAGING Outlines and Parameters . 1 Product Tape and Reel Specifications . 58


    Original     		PDF DS00049R-page 68L SOT 353 tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm

    umt1n applications

    Abstract: "dual TRANSISTORs" sot363
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMT1N Features x x x Two 2SA1037AK chips in a package Mounting possible with SOT-363 automatic mounting machines.


    Original     		PDF 2SA1037AK OT-363 OT-363 OT-363, umt1n applications "dual TRANSISTORs" sot363

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMD3N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Both the DTA114E chip and DTC114E chip in a package


    Original     		PDF DTA114E DTC114E OT-363

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMH10N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC123J Chips in SOT-363 Package.


    Original     		PDF UMH10N DTC123J OT-363

    UMD3N

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMD3N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Both the DTA114E chip and DTC114E chip in a package Mounting possible with SOT-363 automatic mounting machines.


    Original     		PDF DTA114E DTC114E OT-363 UMD3N

    marking H9

    Abstract: H9 transistor marking UMH9N
    Text: MCC TM Micro Commercial Components UMH9N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Two DTC114Y Chips in SOT-363 Package. Transistor elements are independent, eliminating interference


    Original     		PDF DTC114Y OT-363 OT-363 marking H9 H9 transistor marking UMH9N

    UMH10N

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMH10N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC123J Chips in SOT-363 Package.


    Original     		PDF UMH10N DTC123J OT-363 UMH10N

    marking d3

    Abstract: UMD3N
    Text: MCC TM Micro Commercial Components UMD3N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Both the DTA114E chip and DTC114E chip in a package


    Original     		PDF DTA114E DTC114E OT-363 marking d3 UMD3N

    Untitled

    Abstract: No abstract text available
    Text: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess


    OCR Scan     		PDF T-91-01 100Hz D50433A 0DQ3774

    b50112

    Abstract: lm78m05 LM341-LM78M LM341-5.0 H03A LM341 LM78M05CH LM78M12CH LM78M15CH LM78MXX
    Text: July 1994 Semiconductor National LM341, LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    OCR Scan     		PDF LM341, LM78MXX LM341 56B499S b50112 lm78m05 LM341-LM78M LM341-5.0 H03A LM78M05CH LM78M12CH LM78M15CH

    BFY55

    Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
    Text: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages


    OCR Scan     		PDF BFY55 7110fl5b T-3J-23 T-31-23 711DaSb 0DM53GB BFY55 transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips

    BPX81-4

    Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
    Text: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291


    OCR Scan     		PDF BPX81 BPX82-89, BPX82 76K130 18-pln 023SbQS BPX81-4 BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array

    BD 149 transistor

    Abstract: bd 317 BD315 bd318 transistor D317 BD317
    Text: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith


    OCR Scan     		PDF BD315, BD318. AN-415) BD 149 transistor bd 317 BD315 bd318 transistor D317 BD317

    Untitled

    Abstract: No abstract text available
    Text: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan     		PDF AT-41486 vailable111 AT41486 5965-8928E 5968-2031E

    AT41485

    Abstract: No abstract text available
    Text: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped­ ances that are easy to match for low noise and moderate power applications. Applications include


    OCR Scan     		PDF AT-41485 AT-41485 ionimpla27 Kn/50 DD17b43 AT41485

    Untitled

    Abstract: No abstract text available
    Text: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor­ m ance NPN silicon bipolar


    OCR Scan     		PDF AT-64020 AT-64020 QQ17b7fi 5965-8915E

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D • bb53^31 □OEfl'lbb E7D H A P X BLV31 y v . V.H.F. LINEAR PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for


    OCR Scan     		PDF BLV31 bb53T31 002AT74