TRANSISTOR M28S Search Results

TRANSISTOR M28S Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR M28S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
M28S Abstract: transistor m28s NPN Silicon Epitaxial Planar Transistor Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. M28S Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23 ORDERING INFORMATION	Original	OT-23 BL/SSSTC058 3000/Tape M28S transistor m28s NPN Silicon Epitaxial Planar Transistor	PDF
M28S Equivalent Abstract: transistor m28s M28S Text: DC COMPONENTS CO., LTD. M28S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" Voice ROM IC audio output driver stage amplifier applications. TO-92 Pinning	Original	600mA, M28S Equivalent transistor m28s M28S	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch	Original	OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K QW-R201-015	PDF
M28S Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92 Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio output driver amplifier * General purpose switch	Original	OT-23 M28SL M28SG M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28S M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92	PDF
M28S Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch	Original	OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K M28S	PDF
M28S Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch	Original	OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S	PDF
M28S Abstract: transistor m28s Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch	Original	OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S transistor m28s	PDF
transistor m28s Abstract: No abstract text available Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES Excellent HFE linearity High DC Current Gain High Power Dissipation 1 APPLICATION Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE	Original	QW-R201-015 transistor m28s	PDF
M28S Abstract: transistor m28s Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES Excellent HFE linearity High DC Current Gain High Power Dissipation 1 APPLICATION Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE	Original	600mA QW-R201-015 M28S transistor m28s	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 M28S TRANSISTOR NPN 1.EMITTER FEATURES z High DC Current Gain and Large Current Capability 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	100mA 300mA 500mA 600mA 30MHz	PDF
M28ST Abstract: No abstract text available Text: M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE 1 Product-Rank M28ST-B	Original	M28ST M28ST-B M28ST-C M28ST-D 100mA 300mA 29-May-2012 600mA, 30MHz M28ST	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURE Power dissipation mW (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 1.25 A Collector-base voltage	Original	OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage	Original	OT-23 100mA 300mA 500mA 600mA,	PDF
M28S Abstract: No abstract text available Text: M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity High DC Current Gain A L 3 3 C B Top View CLASSIFICATION OF hFE 1	Original	OT-23 M28S-B M28S-C M28S-D 15-Jul-2011 100mA 300mA 500mA 600mA, M28S	PDF

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO:	Original	OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD M28S NPN SILICON TRANSISTOR AU DI O OU T PU T DRI V ER AM PLI FI ER 1 ̈ FEAT U RES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation ̈ 3 APPLI CAT I ON 1 * Audio Output Driver Amplifier * General Purpose Switch	Original	OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SG-x-AE3-R	PDF
transistor cross reference Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER	Original	OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent	PDF
M28S Abstract: HM28S transistor m28s transistor NPN TO-92 Vebo6v Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR M28S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：C060AJ-01 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2	Original	100mm C060AJ-01 M28SHM28S 850mW 100mA 300mA 500mA 600mAIB M28S HM28S transistor m28s transistor NPN TO-92 Vebo6v	PDF
M28S Abstract: M28S Equivalent 10VDC Text: M28S Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC	Original	625Watts -55OC 100mAdc, 300mAdc, 500mAdc, 600mAdc, 20mAdc) 10Vdc, 50mAdc, 30MHz) M28S M28S Equivalent 10VDC	PDF
M28S Abstract: M28S Equivalent transistor m28s Text: MCC TM Micro Commercial Components M28S M28S-B M28S-C M28S-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A	Original	M28S-B M28S-C M28S-D 625Watts -55OC M28S M28S Equivalent transistor m28s	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Untitled Abstract: No abstract text available Text: M28S SEMICONDUCTOR FORWARD INTBRNAUONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Package: TO-92 * High Dc Current Gain Hfe=1000 * Collector Dissipation Pc=lW ABSOLUTE MAXIMUM RATINGS a t Tamb=25*C	OCR Scan	100uA 100mA 800mA 800mA	PDF
M28S Abstract: No abstract text available Text: M C C TO-92 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN FEATURES stlon P cm: T O -9 2 1 .E M IT T E R IcM: • M 2 .C O L LE C TO R 0.625W (Tamb=25”C ) 1A # * » * voltage V (BR)CBO: 4 0 V 3 . BASE H M M d p i d storage Junction tem perature range	OCR Scan		PDF

TRANSISTOR M28S Search Results

TRANSISTOR M28S Result Highlights (5)

TRANSISTOR M28S Datasheets Context Search

M28S

M28S Equivalent

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M28S

M28S

M28S

M28S

transistor m28s

M28S

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M28ST

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M28S

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transistor cross reference

M28S

M28S

M28S

Y2 transistor

Transistor S8550 2TY

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M28S