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    TRANSISTOR M4A Search Results

    TRANSISTOR M4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M4A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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    transistor m4a

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit：inch mm 0.004(0.10)MIN. NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA 0.087(2.20) 0.070(1.80)


    Original     		MMBT4401W 225mW OT-323 600mA IEC61249 transistor m4a PDF

    transistor m4a

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit：inch mm 0.004(0.10)MIN. NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA 0.087(2.20) 0.070(1.80)


    Original     		MMBT4401W 225mW OT-323 600mA 2002/95/EC IEC61249 transistor m4a PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.120(3.04) 0.110(2.80) • Collector current I C = 600mA


    Original     		MMBT4401 600mA 2002/95/EC IEC61249 OT-23, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA


    Original     		MMBT4401 600mA 2002/95/EC IEC61249 OT-23, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT4401 600mA 2002/95/EC OT-363, MIL-STD-750, OT-363 2011-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) Collector current IC = 600mA .054(1.35) .045(1.15) Both normal and Pb free product are available : .087(2.2) .078(2.0)


    Original     		MMBT4401W 225mW OT-323 600mA OT-23 PDF

    MMDT4401

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT4401 600mA 2002/95/EC OT-363, MIL-STD-750, MMDT4401 PDF

    transistor m4a

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb


    Original     		MMBT4401 225mW 600mA OT-23 transistor m4a PDF

    transistor m4a

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401W W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) Collector current IC = 600mA .054(1.35) .045(1.15) In compliance with EU RoHS 2002/95/EC directives .087(2.2)


    Original     		MMBT4401W 225mW OT-323 600mA 2002/95/EC transistor m4a PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts • NPN epitaxial silicon, planar design 0.120 3.04 0.110(2.80) • Collector-emitter voltage V CE = 40V • Collector current IC = 600mA • Lead free in compliance with EU RoHS 2011/65/EU directive


    Original     		MMBT4401 600mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2013-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts • NPN epitaxial silicon, planar design 0.120 3.04 0.110(2.80) • Collector-emitter voltage V CE = 40V • Collector current IC = 600mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		MMBT4401 600mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2013-REV PDF

    MMBT4401

    Abstract: transistor m4a
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .103(2.60) .086(2.20) .056(1.40) .047(1.20) • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMBT4401 600mA 2002/95/EC OT-23, MIL-STD-750, MMBT4401 transistor m4a PDF

    Untitled

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC Tfl T'<J3~JZ-S D Ê|bM 2?S2 S OCmiS^ 1 POWER TRANSISTOR ARRAY •EELECTRON D E V IC E ^ # ' . NPN SILICON e p i t a x i a l low speed power / / P A I 4 5 4 t r a n s is t o r H array sw it c h in g DESCRIPTION The u PA1454H Is an array of four power tran sisto rs. I t Is esp e cially


    OCR Scan     		PA1454H PDF

    PC8119

    Abstract: C10535E PDC800 PPC8119T PPC8120T PC8120T
    Text: Application Note Usage and Applications of PPC8119T and PPC8120T Variable-gain High-frequency Amplifier Silicon MMIC for AGC Unit of Mobile Communications Document No. P12763EJ1V0AN00 1st edition Date Published December 1997 N 1997 Printed in Japan [MEMO]


    Original     		PPC8119T PPC8120T P12763EJ1V0AN00 PC8119 C10535E PDC800 PPC8120T PC8120T PDF

    LOT CODE NE NEC

    Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
    Text: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.


    Original     		P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking PDF

    37470M2

    Abstract: 37470M4
    Text: M IT S U B IS H I M IC RO CO M PUTERS PRELIMINARY , h M 3 7 4 7 0 M 2 -X X X S P ,M 3 7 4 7 0 M 2 A X X X S P M 3 7 4 7 0 M 4 -X X X S P .M 3 7 4 7 0 M 4 A X X X S P M 3 7 4 7 0 M 8 -X X X S P .M 3 7 4 7 0 M 8 A X X X S P ' param etric lim its are sub je t t tr, change


    OCR Scan     		M37470M2-XXXSP 32-pin 37470M2 37470M4 PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    Untitled

    Abstract: No abstract text available
    Text: bS^fiEñ QülbMflfl Gib • MITM M IT S U B IS H I M IC RO CO M PUTERS PRELIMINARY M 37471 M 2-X X X S P .M 37471 M 2A X X X S P M 37471 M 4 -X X X S P ,M 3 7 4 7 I M 4A X X X S P M 3 7 47 1 M 8 -X X X S P .M 3 7 4 71 M 8 A X X X S P Nolice:Theseare not afinal specification.Some


    OCR Scan     		42-pin PDF

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 PDF

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 PDF

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ PDF

    transistor T2S

    Abstract: No abstract text available
    Text: Information Latch-up Document No. C11959EJ2V0IF00 2nd edition Date Published July 1997 N Printed in Japan 1997 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in


    Original     		C11959EJ2V0IF00 transistor T2S PDF