486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT2369
C-120
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KSA1013
Abstract: No abstract text available
Text: KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk
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KSA1013
O-92L
KSA1013YBU
KSA1013OBU
KSA1013YTA
A1013
KSA1013OTA
KSA1013
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Untitled
Abstract: No abstract text available
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
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Untitled
Abstract: No abstract text available
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
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Untitled
Abstract: No abstract text available
Text: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L
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BC63916
BC63916
BC639-16
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50
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HN1C07F
400mA
100mA
100mA,
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Untitled
Abstract: No abstract text available
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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Untitled
Abstract: No abstract text available
Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector
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MMBTA13
MPSA14
OT-23
MMBTA13
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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Untitled
Abstract: No abstract text available
Text: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark
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FSB749
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US5U29
Abstract: No abstract text available
Text: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a
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US5U29
US5U29
15Max.
85Max.
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RSS095N05
Abstract: TB 2500
Text: RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter 0.4Min. 3.9 6.0 zFeatures
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RSS095N05
RSS095N05
TB 2500
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RSS060P05
Abstract: No abstract text available
Text: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.
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RSS060P05FRA
RSS060P05
AEC-Q101
RSS060P05
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Untitled
Abstract: No abstract text available
Text: RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) 0~0.1 (3) 1pin mark
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RTQ025P02FRA
RTQ025P02
AEC-Q101
RTQ025P02FRuipment
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SP8K24
Abstract: voltage source inverter
Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions
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SP8K24
SP8K24
voltage source inverter
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Untitled
Abstract: No abstract text available
Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBT5401
OT-23
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Untitled
Abstract: No abstract text available
Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions
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SP8K24
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2SK2975
Abstract: MITSUBISHI RF POWER MOS FET GR40-310 139706 t12max GR40-10 0927 TRANSISTOR 40799 17053
Text: MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
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2SK2975
2SK2975
450MHz
30dBm
MITSUBISHI RF POWER MOS FET
GR40-310
139706
t12max
GR40-10
0927 TRANSISTOR
40799
17053
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RSQ035P03
Abstract: RSQ035P03 TR
Text: RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 1pin mark 0.4 0~0.1 (3)
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RSQ035P03FRA
RSQ035P03
AEC-Q101
RSQ035P03
RSQ035P03 TR
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pn2907
Abstract: No abstract text available
Text: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information
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PN2907
MMBT2907
PN2907
OT-23
PN2907BU
MMBT2907
OT-23
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