486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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transistor 21 2u
Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
Text: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor
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EMD38
DTC114Y
DTA113Z
10k/47k
1k/10k
transistor 21 2u
EMD38
DTA113Z
DTC114Y
EMT6
d38 marking transistor
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Untitled
Abstract: No abstract text available
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77
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US5L11
2SB1710
RB461F
85Max.
15Max.
US5L11
1000m
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DI210
Abstract: No abstract text available
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77
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US5L11
2SB1710
RB461F
85Max.
15Max.
US5L11
DI210
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
CBVK741B019
F63TNR
FDG6302P
FFB3904
FFB3906
FMB3946
SC70-6
318 SC70-6
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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Untitled
Abstract: No abstract text available
Text: SP8K24FRA SP8K24 Transistor 4V Drive Nch+Nch MOSFET AEC-Q101 Qualified SP8K24 SP8K24FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter
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SP8K24FRA
SP8K24
AEC-Q101
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RSS070N05
Abstract: equivalent transistor rss070
Text: RSS070N05 Transistor 4V Drive Nch MOS FET RSS070N05 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions
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RSS070N05
RSS070N05
equivalent transistor
rss070
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RSS095N05
Abstract: TB 2500
Text: RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter 0.4Min. 3.9 6.0 zFeatures
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RSS095N05
RSS095N05
TB 2500
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RSS060P05
Abstract: No abstract text available
Text: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.
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RSS060P05FRA
RSS060P05
AEC-Q101
RSS060P05
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Untitled
Abstract: No abstract text available
Text: RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) 0~0.1 (3) 1pin mark
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RTQ025P02FRA
RTQ025P02
AEC-Q101
RTQ025P02FRuipment
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SP8K24
Abstract: voltage source inverter
Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions
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SP8K24
SP8K24
voltage source inverter
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RSS110N03
Abstract: No abstract text available
Text: RSS110N03 Transistor 4V Drive Nch MOS FET RSS110N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching, DC/DC converter. Each lead has same dimensions zPackaging specifications
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RSS110N03
RSS110N03
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Untitled
Abstract: No abstract text available
Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions
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SP8K24
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2SA1037AK
Abstract: FML10
Text: UML1N Transistors Low-frequency transistor UML1N zFeatures 1 The 2SA1037AK and a diode are housed independently in a UMT package. zExternal dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 zEquivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.
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2SA1037AK
FML10
FML10
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Untitled
Abstract: No abstract text available
Text: BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BCV26
OT-23
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Untitled
Abstract: No abstract text available
Text: BCV27 BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCV27
OT-23
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Untitled
Abstract: No abstract text available
Text: UML1N Transistors Low-frequency transistor UML1N zFeatures 1 The 2SA1037AK and a diode are housed independently in a UMT package. zExternal dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 zEquivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.
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2SA1037AK
FML10
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RSS100N03
Abstract: No abstract text available
Text: RSS100N03 Transistor 4V Drive Nch MOS FET RSS100N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching, DC/DC converter. Each lead has same dimensions zPackaging specifications
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RSS100N03
RSS100N03
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Untitled
Abstract: No abstract text available
Text: UML1N Transistors Low-frequency transistor UML1N Features 1 The 2SA1037AK and a diode are housed independently in a UMT package. External dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 Equivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.
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2SA1037AK
FML10
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transistor A6A
Abstract: No abstract text available
Text: RSS060P05 Transistor 4V Drive Pch MOSFET RSS060P05 zStructure Silicon P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8)
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RSS060P05
transistor A6A
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Untitled
Abstract: No abstract text available
Text: RTQ030P02FRA RTQ030P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ030P02FRA RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark
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RTQ030P02FRA
RTQ030P02
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: RTQ035P02FRA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FRA RTQ035P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark
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RTQ035P02FRA
RTQ035P02
AEC-Q101
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SP8K24
Abstract: No abstract text available
Text: SP8K24 Transistor 4V Drive Nch+Nch MOS FET SP8K24 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions
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SP8K24
SP8K24
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