MMBT1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
MMBT1015
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MMBT1815
OT-113
QW-R210-003
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MMBT1815
OT-113
QW-R210-003
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"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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BF569
Abstract: marking A1 TRANSISTOR BF569R marking LM
Text: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
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BF569/BF569R
BF569
BF569R
D-74025
16-Jan-96
marking A1 TRANSISTOR
marking LM
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4066 spice model
Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
SOT343 lna
Spice Parameter, Bipolar Transistor
8948
transistor npn d 2078
marking 900
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from
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CNY70
CNY70,
2002/95/EC
2002/96/EC
08-Apr-05
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318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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4066 spice model
Abstract: LL1608-FH MBC13900 MBC13900T1
Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
LL1608-FH
MBC13900T1
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2SB1132
Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Text: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE
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2SB1132
OT-89
2SB1132-P
2SB1132-Q
2SB1132-R
-100mA
-500mA,
-50mA
-50mA,
2SB1132
2SB1132R
2SB1132-R
2SB1132Q
2SB1132-Q
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NPN Transistor 1A 400V to - 92
Abstract: marking code SUs NPN transistor ECB TO-92
Text: STD13003Q Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code
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STD13003Q
STD13003Q
STD13003
KSD-T0A012-002
NPN Transistor 1A 400V to - 92
marking code SUs
NPN transistor ECB TO-92
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STD13003
Abstract: STD13003Q NPN transistor ECB TO-92
Text: STD13003Q NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code STD13003Q
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STD13003Q
STD13003
KSD-T0A012-003
STD13003
STD13003Q
NPN transistor ECB TO-92
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sensor cny70
Abstract: CNY70 ir sensing circuit using CNY70
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
08-Apr-05
sensor cny70
ir sensing circuit using CNY70
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: Q62702-F1575 marking 17 sot343
Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-343
Q62702-F1575
900MHz
Jan-20-1997
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1575
marking 17 sot343
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marking PAs
Abstract: No abstract text available
Text: BFP136W NPN Silicon RF Transistor 3 • For power amplifier in DECT and PCN systems 4 • fT = 5.5GHz • Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs
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BFP136W
VPS05605
OT343
900MHz
Sep-20-2004
marking PAs
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Untitled
Abstract: No abstract text available
Text: BFP136W NPN Silicon RF Transistor 3 • For power amplifier in DECT and PCN systems 4 • fT = 5.5GHz • Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs
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BFP136W
VPS05605
OT343
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113 marking code PNP transistor
Abstract: equivalent transistor c 495 MARKING E EMT3 113 marking code transistor tl 494 equivalent
Text: DTA143ZE DTA143ZUA DTA143ZKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • • • • • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: — DTA143ZE & DTA143ZKA; E13 — DTA143ZUA; 113
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DTA143ZE
DTA143ZUA
DTA143ZKA
SC-70)
SC-59)
DTA143ZE
DTA143ZKA;
DTA143ZUA;
DTA143ZUA
113 marking code PNP transistor
equivalent transistor c 495
MARKING E EMT3
113 marking code transistor
tl 494 equivalent
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Untitled
Abstract: No abstract text available
Text: CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.09 0.48 0.38 § 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR Ï 1.4 1.2 2.6 2.4 R0.1 CckhT I f<R 0 .0 5 J 1’.0 2 ]
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CMBT4123
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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Q62702-F1144
OT-143
900MHz
marking 93A
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din 3141
Abstract: No abstract text available
Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50
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BFW92A
BFW92A
D-74025
31-Oct-97
din 3141
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transistor rf cm 1104
Abstract: SL 1424 11p
Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OT-143
transistor rf cm 1104
SL 1424 11p
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BFR90 transistor
Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Text: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50
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BFR90
BFR90
24-Mar-97
BFR90 transistor
telefunken ha 680
BFR90 amplifier
BFR90S
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