high voltage npn transistor SOT-89 darlington
Abstract: No abstract text available
Text: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Features • available in the following packages: Dimensions Units : mm SST3 I . » ± 0 .2 1y T i U. «9 X I 0 .9 5 0 . » — SST3 (SST, SOT-23) • •
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OT-23)
OT-89)
SSTA28
RXT-A28
high voltage npn transistor SOT-89 darlington
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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D 823 transistor
Abstract: BF56 BF821S
Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power
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BCW60BLT1
Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Text: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.
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BCW60LT1
BCW61LT1
OT-23
BCW60BLT1
BCW60CLT1
BCW60DLT1
100MHz
200Hz
marking 1R PNP
marking code 1Y
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3904 npn
Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3903/3904
sot-23
10iiA,
10ftA,
71b4ms
0Q2S11U
3904 npn
KST3903
741i
KST3904
npn transistor dc 558
sot23 marking JR
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional communication equipment.
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BF821
BF823
BF820,
BF822.
BF821
BF823
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74AUP1G19GM
Abstract: 74AUP1G19GW JESD22-A114E
Text: 74AUP1G19 Low-power 1-of-2 decoder/demultiplexer Rev. 01 — 13 August 2008 Product data sheet 1. General description The 74AUP1G19 provides a 1-of-2 decoder/demultiplexer with a common output enable. It buffers the data on input pin A and passes it either to output pin 1Y true or 2Y
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74AUP1G19
74AUP1G19
74AUP1G19GM
74AUP1G19GW
JESD22-A114E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Telephony and professional communication equipment.
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BF821
BF823
BF820,
BF822.
MAM256
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MOSFET TRANSISTOR SMD 033
Abstract: 440 transistor
Text: PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB8040XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD 033
440 transistor
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Transistor 3904
Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST3903/3904
OT-23
KST3903
KST3904
Transistor 3904
3904 npn
3904 SOT-23
sot 23 mark kst
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FAH diode
Abstract: diode marking FAH transistor marking 15c
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source.
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2SJ463A
2SJ463A
FAH diode
diode marking FAH
transistor marking 15c
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HVR-1X 7 diode
Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01EC0
TM1061S-L
TM1061S-R
TM1241S-L
TM1241S-R
TM1261S-L
TM1261S-R
TM1641P-L
TM1641S-L
TM1661P-L
HVR-1X 7 diode
STR80145
SE135N
hvr 1X 3 diode
semiconductor STR 20005
sk a 3120c
SE110N
ux-c2b equivalent
transistor CS 9012 PNP
STR83159
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3904 npn
Abstract: 3904 KST3903 KST3904 KST3904 sot-23 marking code SS SOT23 transistor TRANSISTOR MARKING CODE ss TRANSISTOR 3904 ic 5ma transistor 3904 SOT-23
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -40 -6 -200 350 150 V V V mA mW VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST3903/3904
OT-23
KST3903
KST3904
3904 npn
3904
KST3903
KST3904
KST3904 sot-23
marking code SS SOT23 transistor
TRANSISTOR MARKING CODE ss
TRANSISTOR 3904
ic 5ma transistor
3904 SOT-23
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transistor marking 1y
Abstract: HB573
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3903/3904
OT-23
KST3903
KST3904
transistor marking 1y
HB573
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2SD2457
Abstract: No abstract text available
Text: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment
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2SD2457
2SD2457
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PBSS4480x
Abstract: PBSS5480X
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X
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M3D109
PBSS4480X
R75/02/pp13
PBSS4480x
PBSS5480X
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X FEATURES
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M3D109
PBSS4480X
R75/02/pp13
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sc6211
Abstract: PBSS4480x PBSS5480X
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 Aug 5 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor
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M3D109
PBSS4480X
SCA76
R75/02/pp13
sc6211
PBSS4480x
PBSS5480X
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3904 NPN
Abstract: KST3904
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C ollecto r-B a se Voltage C o llecto r-E m itte r V oltage Em itter-Base V oltage Symbol Rating VcBO VcEO -6 0 -4 0 -6 -2 0 0
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KST3903/3904
OT-23
KST3903
KST3904
3904 NPN
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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Untitled
Abstract: No abstract text available
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3903/3904
KST3903
KST3904
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BF820
Abstract: BF821 BF822 BF823
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA
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BF821;
BF823
BF820,
BF822.
BF821
MAM256
SCA76
BF820
BF821
BF822
BF823
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3904 npn
Abstract: KST3903 KST3904 FAIRCHILD SOT-23 MARK 1a
Text: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation
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KST3903/3904
OT-23
KST390
300ns,
KST3903
KST3904
3904 npn
KST3904
FAIRCHILD SOT-23 MARK 1a
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