1N914
Abstract: LMBT5401LT1G
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
OT-23
1N914
LMBT5401LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
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1N914
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G
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LMBT5401DW1T1G
3000/Tape
LMBT5401DW1T3G
10000/Tape
OT-363/SC-88
419B-01
419B-02.
1N914
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MMBT5401
Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L
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MMBT5401
-150V
350mW
OT-23
MMBT5401L
MMBT5401-AE3-R
MMBT5401L-AE3-R
QW-R206-011
MMBT5401
MMBT5401L
MMBT5401L-AE3-R
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2L smd transistor
Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5401
C-120
2L smd transistor
CMBT5401
TRANSISTOR SMD MARKING 2l
smd 2l
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2L smd transistor
Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5401
C-120
2L smd transistor
TRANSISTOR SMD MARKING 2l
smd transistor 2l
CMBT5401
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2L smd transistor
Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5401
C-120
2L smd transistor
MARKING SMD pnp TRANSISTOR ec
smd transistor 2l
TRANSISTOR SMD MARKING 2l
ts 4141 TRANSISTOR smd
CMBT5401
2L smd
Device marking 160
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sot-23 2L
Abstract: No abstract text available
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 2L
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sot-23 Marking 2L
Abstract: MMBT5401 sot23 marking 2l
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 Marking 2L
MMBT5401
sot23 marking 2l
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2L smd transistor
Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking
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OT-23
CMBT5401
C-120
2L smd transistor
CMBT5401
TRANSISTOR SMD MARKING 2l
smd transistor 2l
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
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MARKING 2L
Abstract: MMBT5401 MMBT5551
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
MMBT5401
MARKING 2L
MMBT5551
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MMBT5401 SOT-23
Abstract: marking 2L 2l sot23 marking transistor marking 2L
Text: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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MMBT5401
OT-23
OT-23
MMBT5551
-100A,
-10mA
-50mA
-10mA
30MHz
MMBT5401 SOT-23
marking 2L
2l sot23 marking
transistor marking 2L
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5401
C-120
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Untitled
Abstract: No abstract text available
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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OCR Scan
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PDF
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CMBT5401
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Untitled
Abstract: No abstract text available
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS
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CMBT5401
23A33T4
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CMBT5401
Abstract: 2L TRANSISTOR
Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PACKAGE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 ! 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 o.sr _2 .00_ 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT5401
CMBT5401
2L TRANSISTOR
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DTC124XK equivalent
Abstract: No abstract text available
Text: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT
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DTC124XK
OT-23
DTC124XK equivalent
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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900MHz
Q62702-F1492
OT-323
IS211
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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PDF
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900MHz
Q62702-F1501
OT-343
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transistor B 1184
Abstract: No abstract text available
Text: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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PDF
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900MHz
BFP182R
OT-143R
Q62702-F1601
transistor B 1184
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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OCR Scan
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PDF
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900MHz
Q62702-F1492
OT-323
aS35bD5
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Transistor BFR 181w
Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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PDF
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900MHz
Q62702-F1491
OT-323
Transistor BFR 181w
GMA13
MARKING CODE 21E SOT323
TRANSISTOR BO 345
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package
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PDF
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Q62702-F1250
OT-23
IS21/S
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