BSS139
Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information
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E6327:
E7941
Q62702-S612
Q67000-S221
OT-23
SIK02349
BSS139
kds 7g
marking HSs SOT23
MARKING KDS SOT-23
marking BSs sot23 siemens
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BSP320
Abstract: No abstract text available
Text: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol
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OT-223
Q67000-S4001
BSP320
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ss129
Abstract: transistor marking 7D
Text: SIPMOS Small-Signal Transistor BSS 129 • Vds • ID • • • • • 240 V 0.15 A ^D S on 2 0 Q N channel Depletion mode High dynamic resistance Available grouped in Vg^ Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking BSS 129 Q62702-S015 E6288:1500 pcs/reel;
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Q62702-S015
E6288
Q67000-S116
E6296
ss129
transistor marking 7D
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998
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OCR Scan
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62702-F1129
TheT07304
fi235bQ5
D1E174E
Q1517M3
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S74B
Abstract: NP5J TRANSISTOR MARKING YB 2SC3065 2SC306 LN 2003a
Text: SANYO SEMICONDUCTOR CORP 3S E D ? cic]7D7t DDGflflm 1 wa .T-Z9-27 NPN Epitaxial Planar Silicon Composite Transistor 2 029A Differential Amp Applications S74B Applications . Differential amp, current mirror. . Features . Excellent in thermal equilibrium differential amp.
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T-91-20
SC-43
S74B
NP5J
TRANSISTOR MARKING YB
2SC3065
2SC306
LN 2003a
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PDF
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toshiba M7
Abstract: No abstract text available
Text: TO SH IB A TENTATIVE 2SC5091F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF —l.ld B , |S2lel2= 7dB f = 1GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5091F
toshiba M7
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toshiba M7
Abstract: 2SC5091 2SC5091F transistor ESM
Text: 2SC5091F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2le|2= 7dB f=lGHz 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC5091F
2SC5091
toshiba M7
2SC5091F
transistor ESM
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING
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2SK3074
961001EAA1
2200pF
2200pF
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C
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2SK3075
961001EAA1
2200pF
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C
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2SK3075
961001EAA1
2200pF
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , |S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5091FT
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SMUN5211DW
Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
Text: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are
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SMUN52XXDW
SMUN5211DW
22-Jun-2007
Digital Transistor
SMUN52XXDW
SOT-363 marking 05
CHIP TRANSISTOR
smun5235dw
transistor marking 7D
SMUN5214DW
"two TRANSISTORs" sot-363
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2970,RN2971 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N 7Q 7D • V ■ m MT M R N 7 Q 7 1 g ■ « ■ V IHF M U U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 1.25.+ 0.1
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RN2970
RN2971
RN1970-RN1971
RN2970
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PDF
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BF960
Abstract: transistor ft 960
Text: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ *-5 * BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
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000S530
569-GS
BF960
transistor ft 960
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PDF
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transistor CQ 735
Abstract: 2SC4853 ZS21 4578a
Text: Ordering number:EN 4578A SAMYO N0.4578A 2SC4853 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications i F eatu res • Low-voltage, low-current operation : fr=5G H z typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).
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2SC4853
transistor CQ 735
2SC4853
ZS21
4578a
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3099 TOSHIBA TRANSISTOR n r SILICON NPN EPITAXIAL PLANAR TYPE ^ n Q Q Unit in mm V H F ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • + CL5 2.5 - a s Low Noise Figure. NF = I.7dB, ¡S2ler = 15 dB f = 500MHz NF = 2.5dB, |S 2 le l 2 = 9-5dB (f = 1GHz)
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2SC3099
500MHz)
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PDF
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BT 1496
Abstract: ic 7472 2SC5091
Text: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 7dB f=lG H z Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5091
-j250
BT 1496
ic 7472
2SC5091
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PDF
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of transistor C 4908
Abstract: 2SC4853 TED 2422 c 337 25
Text: Ordering number:EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
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EN4578A
2SC4853
2059B
2SC4853]
S21e2
15Ltd.
of transistor C 4908
2SC4853
TED 2422
c 337 25
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PDF
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TRANSISTOR KT 838
Abstract: KT 819 transistor 2SC4854
Text: Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).
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EN4579
2SC4854
S21e2
2018B
2SC4854]
TRANSISTOR KT 838
KT 819 transistor
2SC4854
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2SC5091
Abstract: No abstract text available
Text: TO SH IBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.l d B , |S2lel2= 7dB f= lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SC5091
2SC5091
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PDF
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7472 ci
Abstract: IC 4407 2SC5091 ic 1496 specifications
Text: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 7dB f=lG H z Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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2SC5091
-j250
7472 ci
IC 4407
2SC5091
ic 1496 specifications
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PDF
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LTA 703 S
Abstract: No abstract text available
Text: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q91 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF - l.ld B , |S2 iel2= 7dB f= lG H z U nit in mm 1.6 + 0.2 0.8 ± 0.1 1 MAXIMUM RATINGS (Ta = 25°C)
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2SC5091
2SC5Q91
--j50
--j50
LTA 703 S
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PDF
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led driver using the diode 1N4007
Abstract: EER1616 EE1616
Text: www.fairchildsemi.com FSD210B, FSD200B Green Mode Fairchild Power Switch FPSTM Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • FSD210B Consumes Under 0.1W at 265VAC & No Load with Advanced Burst-Mode Operation
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FSD210B,
FSD200B
134KHz)
FSD210B
265VAC
FSD200B
led driver using the diode 1N4007
EER1616
EE1616
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PDF
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piezoelectric mobile charger
Abstract: transformer smps 300R FSD210 8-pin EER1616 SMPS 300R ee1616 230 AC to 12V 5W led circuit FSD210B FSDH565 12v mobile phone charger circuit diagram
Text: www.fairchildsemi.com FSD210B, FSD200B Green Mode Fairchild Power Switch FPSTM Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • FSD210B Consumes Under 0.1W at 265VAC & No Load with Advanced Burst-Mode Operation
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FSD210B,
FSD200B
134KHz)
FSD210B
265VAC
FSD200B
piezoelectric mobile charger
transformer smps 300R
FSD210 8-pin
EER1616
SMPS 300R
ee1616
230 AC to 12V 5W led circuit
FSDH565
12v mobile phone charger circuit diagram
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PDF
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