Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
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FJX3904
SC-70
FJX3904TF
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TRANSISTOR SMD MARKING CODE 210
Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking
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LMSB709LT1
3000/Tape
LMSB709LT1G
OT-23
LMSB709LT1-1/2
LMSB709LT1-2/2
TRANSISTOR SMD MARKING CODE 210
SMD Transistor Y14
TRANSISTOR SMD MARKING CODE 304 a
TRANSISTOR SMD MARKING CODE X D
marking code br SMD
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE PD
transistor smd code marking 102
transistor smd arx
TRANSISTOR SMD MARKING CODE 304 h
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
BC847B
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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2FK transistor
Abstract: No abstract text available
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
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SOT-23 2xk
Abstract: 2xk transistor npn
Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4401K
MMBT4401K
OT-23
SOT-23 2xk
2xk transistor npn
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
QW-R206-006
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2FK transistor
Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
fairchild sot-23 Device Marking pc
PNP Epitaxial Silicon Transistor sot-23
a/smd 2fk transistor
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transistor 1AK
Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
transistor 1AK
1AK marking transistor
1ak transistor
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2tk transistor
Abstract: No abstract text available
Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4403K
MMBT4403K
OT-23
2tk transistor
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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transistor 033
Abstract: MMBT5088 MMBT5089 marking 1R NPN
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
transistor 033
MMBT5089
marking 1R NPN
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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STC405
Abstract: IC DATE CODE
Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Marking Diagram
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STC405
O-220F-3L
SDB20D45
KSD-T0O064-001
STC405
IC DATE CODE
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MARKING 1PK
Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT2222AK
MMBT2222AK
OT-23
MARKING 1PK
1PK transistor
fairchild sot-23 Device Marking pc
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Untitled
Abstract: No abstract text available
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
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2AK TRANSISTOR
Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
2AK TRANSISTOR
PNP Epitaxial Silicon Transistor sot-23
marking 2AK
MMBT3906K 2ak
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sot-23 2L
Abstract: No abstract text available
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 2L
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
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BF822W
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF820W; BF822W NPN high voltage transistor MARKING FEATURES • S-mlni package TYPE NUMBER MARKING CODE BF820W -1 V BFB22W -1X • High voltage. APPLICATIONS Especially intended for telephony and professional communication equipment.
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BF820W
BFB22W
BF820W;
BF822W
OT323
OT323)
BF822W
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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