TRANSISTOR MARKING EY Search Results

TRANSISTOR MARKING EY Result Highlights (5)

Part	Manufacturer	Description
5962-8672601EA	Rochester Electronics LLC	Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA)
54F350/BEA	Rochester Electronics LLC	54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA)
5962-8672601FA	Rochester Electronics LLC	Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/B2A	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A)

TRANSISTOR MARKING EY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor ey Abstract: sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3265 Pb z High DC current gain: hFE:100-320 z Low saturation voltage. z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package.	Original	KTC3265 KTC1298. OT-23 BL/SSSTC109 transistor ey sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY	PDF
jd 1803 IC Abstract: jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR Text: RT9167/A Low-Noise, Fixed Output Voltage, 200mA/500mA LDO Regulator General Description Features The RT9167/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor low noise micropower regulator suitable for portable z Low Dropout Voltage 220mV and 200mA	Original	RT9167/A 200mA/500mA RT9167/A 220mV 200mA) 100mV pas54 jd 1803 IC jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR	PDF
T flip flop IC Abstract: motorola 68hc11 motorola cm 340 a transistor data sheet IC 74hc05 reset circuit 68HC11 74HC05 MAX6314 MAX6315 MAX811 Text: 19-1090; Rev 0; 6/96 68HC11/Bidirectional-Compatible µP Reset Circuit _Applications _Features ♦ Small SOT143 Package ♦ RESET Output Simplifies Interface to Bidirectional Reset I/Os ♦ Precision Factory-Set VCC Reset Thresholds:	Original	68HC11/Bidirectional-Compatible OT143 100mV 140ms, 1120ms MAX811 MAX6314 T flip flop IC motorola 68hc11 motorola cm 340 a transistor data sheet IC 74hc05 reset circuit 68HC11 74HC05 MAX6314 MAX6315 MAX811	PDF
MOTOROLA DATE CODE transistor Abstract: motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709 MSB709-RT1 MSB709-ST1 marking code ER transistor Text: Order this dats sheet by MSB709-RTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB709-RTI* PNP Silicon General Purpose Amplifier Transistor MSB709=STI This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power	Original	MSB709-RTl/D MSB709-RTI* MSB709 SC-59 inch/3000 inch/10 318D-03, MK145BP, MOTOROLA DATE CODE transistor motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709-RT1 MSB709-ST1 marking code ER transistor	PDF
transistor d-331 Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 transistor d-331	PDF
phototransistor 650 nm Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 phototransistor 650 nm	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
transistor marking code EY Abstract: T flip flop IC 68HC11 74HC05 MAX6314 MAX6315 MAX811 MAX6314US30D1 Text: 19-1090; Rev 1; 1/99 68HC11/Bidirectional-Compatible µP Reset Circuit Features The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly	Original	68HC11/Bidirectional-Compatible MAX6314 68HC11. OT143 transistor marking code EY T flip flop IC 68HC11 74HC05 MAX6315 MAX811 MAX6314US30D1	PDF
Untitled Abstract: No abstract text available Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original		PDF
ktc32 Abstract: sot-23 EY EY transistor Text: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain: hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	KTC3265 OT-23 OT-23 KTA1298 100mA 500mA, 100MHz ktc32 sot-23 EY EY transistor	PDF
phototransistor 650 nm Abstract: phototransistor peak 550 nm Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar	Original	331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm	PDF
2N464 Abstract: 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B Text: MIL-s-19500/49c EL 24 nay 1968 SUPERSEDING: See Section 6 MILITASY SPECIF1CATION SE-fICONDUCTOR DEVICE, TRANSISTOR, PNP, CEFMANIUM TYPES 2N464, 2N465, 2N467 I ‘o 1, SCOPE 1.1 =. - ThLs specification cOver$ the detail rewireaents for germanium, PNP, transistors for use in Low-pawer, amp Lifier applications in compatible	Original	MIL-s-19500/49c 2N464, 2N465, 2N467 140nmouth, 2N464 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B	PDF
Transistor L83 Abstract: N03C Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FA1A3Q MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE 2.8 ± 0.2 B 1.5 O— V W Ri -Hc[ R l = 1.0 k i2 R2 = 10 k£2	OCR Scan	10-Ir TC-2119 1987M Transistor L83 N03C	PDF

transistor WL 431 Abstract: 2N700A BUV pnp 50a MW1131 Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,	OCR Scan	MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131	PDF
2SD2402 Abstract: transistor 2sD2402 Transistor Marking EY Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY	PDF
Untitled Abstract: No abstract text available Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë\| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible	OCR Scan	HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,	PDF
phototransistor 650 nm Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor	PDF
c 331 transistor Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331 Text: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.	Original	GPL06924 Q62702-P1634 IPCE/IPCE25o OHF00871 OHF01530 OHF01924 c 331 transistor transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
PAM3101DAB Abstract: PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280 Text: PAM3101 300mA High PSRR Low Dropout CMOS Linear Regulator Features General Description n Low Dropout Voltage: 180mV@300mA V O=3.3V n Output Voltage Accuracy within ±2% n Quiescent Current : 65 A Typ. n High PSRR: 70dB@1kHz n Excellent Line and Load Regulation	Original	PAM3101 300mA 180mV 300mA OT-23 OT-89 PAM3101 SC70-3L PAM3101DAB PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280	PDF
transistor h 331 Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm	PDF
L4Z marking Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z	OCR Scan	TC-2117 1987M L4Z marking	PDF
transistor d 331 Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331 Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten	Original	331-JK Q62702-P1634 transistor d 331 D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331	PDF

TRANSISTOR MARKING EY Search Results

TRANSISTOR MARKING EY Result Highlights (5)

TRANSISTOR MARKING EY Datasheets Context Search

transistor ey

jd 1803 IC

T flip flop IC

MOTOROLA DATE CODE transistor

transistor d-331

phototransistor 650 nm

Transistor S8550 2TY

Y2 transistor

transistor marking code EY

Untitled

ktc32

phototransistor 650 nm

2N464

Transistor L83

transistor WL 431

2SD2402

Untitled

phototransistor 650 nm

c 331 transistor

BC517 spice model

PAM3101DAB

transistor h 331

L4Z marking

transistor d 331