Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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PDF
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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Original
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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PDF
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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Original
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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Original
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BC847B
BC857B.
BC847B
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PDF
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LMBT5551DW1T1G
Abstract: 1N914 LMBT5551DW1T3G
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G
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Original
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
419B-01
419B-02.
LMBT5551DW1T1G
1N914
LMBT5551DW1T3G
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PDF
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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Original
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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PDF
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sot23 g1
Abstract: MMBT5551
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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Original
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MMBT5551
OT-23
QW-R206-010
sot23 g1
MMBT5551
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PDF
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TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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Original
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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PDF
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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Original
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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Original
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OT-23
CMBT5551
C-120
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PDF
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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OCR Scan
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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PDF
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D1477
Abstract: 2SJ185 2SK1399
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm 1 3 1.1 to 1.4 +0.1 0.16 –0.06 Marking 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK1399 SC-59 (Mini Mold)
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Original
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2SK1399
SC-59
D1477
2SJ185
2SK1399
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PDF
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marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
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Original
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OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
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PDF
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marking g1
Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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BFS20
OT-23
OT-23
marking g1
marking HA 7 sot23
transistor bfs20
BFS20
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PDF
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BFS20
Abstract: No abstract text available
Text: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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Original
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BFS20
OT-23
BFS20
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PDF
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marking G1
Abstract: No abstract text available
Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)
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Original
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MMBT5551
OT-23
MMBT5401
100MHz
marking G1
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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Original
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OT-23
MMBT5551
MMBT5401
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PDF
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MARKING G1.G
Abstract: BC847B, BC847C bc847c transistor PN2222A EQUIVALENT BC847B BC847C UMT222A SST222A BC847B NPN PN2222A
Text: BC847B / BC847C Transistors NPN General Purpose Transistor BC847B / BC847C !Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. !External dimensions (Units : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 !Package, marking, and Packaging specifications BC847C
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Original
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BC847B
BC847C
BC857B.
BC847B
10mA/0
MARKING G1.G
BC847B, BC847C
bc847c transistor
PN2222A EQUIVALENT
BC847C
UMT222A
SST222A
BC847B NPN
PN2222A
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
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PDF
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BC847B
Abstract: BC847C BC857B MMST2222A PN2222A T116 MARKING G1.G UMT222A
Text: BC847B / BC847C Transistors NPN General Purpose Transistor BC847B / BC847C !Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. !External dimensions (Units : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 !Package, marking, and Packaging specifications BC847C
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Original
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BC847B
BC847C
BC857B.
BC847B
BC847C
BC857B
MMST2222A
PN2222A
T116
MARKING G1.G
UMT222A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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PDF
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IBM 286 schematic
Abstract: No abstract text available
Text: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C
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Original
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BUL312FH
BUL312FH
O-220FH
IBM 286 schematic
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PDF
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BUL312FH
Abstract: No abstract text available
Text: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C
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Original
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BUL312FH
O-220FH
BUL312FH
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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OCR Scan
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900MHz
Q62702-F1501
OT-343
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PDF
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